Didier Théron

Directeur de recherche epst

UMR 8520 - INSTITUT D'ELECTRONIQUE, DE MICROELECTRONIQUE ET DE NANOTECHNOLOGIE

Publications

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Multimodal Scanning Microwave and Electron Microscopy for nanoscale measurements under vacuum. 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. <a target=\"_blank\" href=\"https://hal.science/hal-04932615v1\">⟨hal-04932615⟩</a>", "title_s":["Multimodal Scanning Microwave and Electron Microscopy for nanoscale measurements under vacuum"], "authFullName_s":["Petr Polovodov","Clément Lenoir","Christophe Boyaval","Kamel Haddadi","Didier Théron"], "halId_s":"hal-04932615", "docType_s":"COMM", "producedDateY_i":2024 },{ "citationRef_s":"IEEE Transactions on Instrumentation and Measurement, 2024, 73 (6), pp.6006109. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TIM.2024.3378310\">⟨10.1109/TIM.2024.3378310⟩</a>", "citationFull_s":"Johannes Hoffmann, Sophie de Préville, Bruno Eckmann, Hung-Ju Lin, Benedikt Herzog, et al.. Comparison of Impedance Matching Networks for Scanning Microwave Microscopy. IEEE Transactions on Instrumentation and Measurement, 2024, 73 (6), pp.6006109. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TIM.2024.3378310\">⟨10.1109/TIM.2024.3378310⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04779337v1\">⟨hal-04779337⟩</a>", "title_s":["Comparison of Impedance Matching Networks for Scanning Microwave Microscopy"], "authFullName_s":["Johannes Hoffmann","Sophie de Préville","Bruno Eckmann","Hung-Ju Lin","Benedikt Herzog","Kamel Haddadi","Didier Theron","Georg Gramse","Damien Richert","José Morán-Meza","François Piquemal"], "halId_s":"hal-04779337", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"Nano Letters, 2024, 24 (28), pp.8550-8557. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acs.nanolett.4c01401\">⟨10.1021/acs.nanolett.4c01401⟩</a>", "citationFull_s":"Hao Xu, Srisaran Venkatachalam, Toky Harrison Rabenimanana, Christophe Boyaval, Sophie Eliet, et al.. Imaging nanomechanical vibrations and manipulating parametric mode coupling via scanning microwave microscopy. Nano Letters, 2024, 24 (28), pp.8550-8557. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acs.nanolett.4c01401\">⟨10.1021/acs.nanolett.4c01401⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04651920v1\">⟨hal-04651920⟩</a>", "title_s":["Imaging nanomechanical vibrations and manipulating parametric mode coupling via scanning microwave microscopy"], "authFullName_s":["Hao Xu","Srisaran Venkatachalam","Toky Harrison Rabenimanana","Christophe Boyaval","Sophie Eliet","Flavie Braud","Eddy Collin","Didier Theron","Xin Zhou"], "halId_s":"hal-04651920", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"IEEE Transactions on Instrumentation and Measurement, 2024, 73, pp.6006109. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TIM.2024.3378310\">⟨10.1109/TIM.2024.3378310⟩</a>", "citationFull_s":"Johannes Hoffmann, Sophie de Préville, Bruno Eckmann, Hung-Ju Lin, Kamel Haddadi, et al.. Comparison of Impedance Matching Networks for Scanning Microwave Microscopy. IEEE Transactions on Instrumentation and Measurement, 2024, 73, pp.6006109. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TIM.2024.3378310\">⟨10.1109/TIM.2024.3378310⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04777082v1\">⟨hal-04777082⟩</a>", "title_s":["Comparison of Impedance Matching Networks for Scanning Microwave Microscopy"], "authFullName_s":["Johannes Hoffmann","Sophie de Préville","Bruno Eckmann","Hung-Ju Lin","Kamel Haddadi","Didier Théron","Georg Gramse","Damien Richert","José Morán-Meza","François Piquemal","Benedikt Herzog"], "halId_s":"hal-04777082", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"Frontiers of Nanomechanical Systems, Jun 2023, Delft, Netherlands", "citationFull_s":"Xin Zhou, D. Theron, H. Xu, Christophe Boyaval, Sophie Eliet, et al.. Scanning microwave microscopy for investigations of mechanical vibrations and mode coupling. Frontiers of Nanomechanical Systems, Jun 2023, Delft, Netherlands. <a target=\"_blank\" href=\"https://hal.science/hal-04234474v1\">⟨hal-04234474⟩</a>", "title_s":["Scanning microwave microscopy for investigations of mechanical vibrations and mode coupling"], "authFullName_s":["Xin Zhou","D. Theron","H. Xu","Christophe Boyaval","Sophie Eliet","Pascal Tilmant"], "halId_s":"hal-04234474", "docType_s":"COMM", "producedDateY_i":2023 },{ "citationRef_s":"Microelectronic Engineering, 2023, 280, pp.112064. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.mee.2023.112064\">⟨10.1016/j.mee.2023.112064⟩</a>", "citationFull_s":"Hao Xu, Srisaran Venkatachalam, Christophe Boyaval, Pascal Tilmant, Francois Vaurette, et al.. Fabrication of silicon nitride membrane nanoelectromechanical resonator. Microelectronic Engineering, 2023, 280, pp.112064. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.mee.2023.112064\">⟨10.1016/j.mee.2023.112064⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04172152v1\">⟨hal-04172152⟩</a>", "title_s":["Fabrication of silicon nitride membrane nanoelectromechanical resonator"], "authFullName_s":["Hao Xu","Srisaran Venkatachalam","Christophe Boyaval","Pascal Tilmant","Francois Vaurette","Yves Deblock","Didier Theron","Xin Zhou"], "halId_s":"hal-04172152", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Applied Physics Letters, 2023, 122 (3), pp.033502. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0127987\">⟨10.1063/5.0127987⟩</a>", "citationFull_s":"C. Morelle, D. Théron, I. Roch-Jeune, Pascal Tilmant, Etienne Okada, et al.. A micro-electro-mechanical accelerometer based on gallium nitride on silicon. Applied Physics Letters, 2023, 122 (3), pp.033502. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0127987\">⟨10.1063/5.0127987⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03945292v1\">⟨hal-03945292⟩</a>", "title_s":["A micro-electro-mechanical accelerometer based on gallium nitride on silicon"], "authFullName_s":["C. Morelle","D. Théron","I. Roch-Jeune","Pascal Tilmant","Etienne Okada","F. Vaurette","Bertrand Grimbert","Joff Derluyn","Stefan Degroote","Marianne Germain","M. Faucher"], "halId_s":"hal-03945292", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"GDR-mecaQ, Oct 2022, Bordeaux (France), France", "citationFull_s":"Hao Xu, Didier Theron, X Zhou. Scanning microwave microscopy for detecting mechanical vibrations of silicon nitride membranes. GDR-mecaQ, Oct 2022, Bordeaux (France), France. <a target=\"_blank\" href=\"https://hal.science/hal-04416081v1\">⟨hal-04416081⟩</a>", "title_s":["Scanning microwave microscopy for detecting mechanical vibrations of silicon nitride membranes"], "authFullName_s":["Hao Xu","Didier Theron","X Zhou"], "halId_s":"hal-04416081", "docType_s":"COMM", "producedDateY_i":2022 },{ "citationRef_s":"Journal of Applied Physics, 2021, 129 (11), pp.114502. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0039624\">⟨10.1063/5.0039624⟩</a>", "citationFull_s":"Xin Zhou, Dylan Cattiaux, Didier Theron, Eddy Collin. Electric circuit model of microwave optomechanics. Journal of Applied Physics, 2021, 129 (11), pp.114502. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0039624\">⟨10.1063/5.0039624⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03066796v1\">⟨hal-03066796⟩</a>", "title_s":["Electric circuit model of microwave optomechanics"], "authFullName_s":["Xin Zhou","Dylan Cattiaux","Didier Theron","Eddy Collin"], "halId_s":"hal-03066796", "docType_s":"ART", "producedDateY_i":2021 },{ "citationRef_s":"Applied Sciences, 2021, 11 (6), pp.2788. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app11062788\">⟨10.3390/app11062788⟩</a>", "citationFull_s":"Petr Polovodov, Didier Theron, Clément Lenoir, D. Deresmes, Sophie Eliet, et al.. Near-field scanning millimeter-wave microscope operating inside a scanning electron microscope: towards quantitative electrical nanocharacterization. Applied Sciences, 2021, 11 (6), pp.2788. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app11062788\">⟨10.3390/app11062788⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03320954v2\">⟨hal-03320954v2⟩</a>", "title_s":["Near-field scanning millimeter-wave microscope operating inside a scanning electron microscope: towards quantitative electrical nanocharacterization"], "authFullName_s":["Petr Polovodov","Didier Theron","Clément Lenoir","D. Deresmes","Sophie Eliet","Christophe Boyaval","Gilles Dambrine","Kamel Haddadi"], "halId_s":"hal-03320954", "docType_s":"ART", "producedDateY_i":2021 },{ "citationRef_s":"Applied Sciences, 2020, 10 (22), 8234, 11 p. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10228234\">⟨10.3390/app10228234⟩</a>", "citationFull_s":"Olivier Douhéret, Didier Theron, David Moerman. Exploring the capabilities of scanning microwave microscopy to characterize semiconducting polymers. Applied Sciences, 2020, 10 (22), 8234, 11 p. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10228234\">⟨10.3390/app10228234⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03022518v1\">⟨hal-03022518⟩</a>", "title_s":["Exploring the capabilities of scanning microwave microscopy to characterize semiconducting polymers"], "authFullName_s":["Olivier Douhéret","Didier Theron","David Moerman"], "halId_s":"hal-03022518", "docType_s":"ART", "producedDateY_i":2020 },{ "citationRef_s":"ACS Applied Nano Materials, 2020, 3 (8), pp.8268-8277. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acsanm.0c01687\">⟨10.1021/acsanm.0c01687⟩</a>", "citationFull_s":"Jaume Llacer, David Moerman, Olivier Douheŕet, Xavier Noirfalise, Claudio Quarti, et al.. Nanoscale Studies at the Early Stage of Water-Induced Degradation of CH 3 NH 3 PbI 3 Perovskite Films Used for Photovoltaic Applications. ACS Applied Nano Materials, 2020, 3 (8), pp.8268-8277. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acsanm.0c01687\">⟨10.1021/acsanm.0c01687⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03022558v1\">⟨hal-03022558⟩</a>", "title_s":["Nanoscale Studies at the Early Stage of Water-Induced Degradation of CH 3 NH 3 PbI 3 Perovskite Films Used for Photovoltaic Applications"], "authFullName_s":["Jaume Llacer","David Moerman","Olivier Douheŕet","Xavier Noirfalise","Claudio Quarti","Roberto Lazzaroni","Didier Theron","Philippe Leclere"], "halId_s":"hal-03022558", "docType_s":"ART", "producedDateY_i":2020 },{ "citationRef_s":"IEEE MTT International Microwave Symposium, IMS 2020, Aug 2020, Los Angeles (On-line event), United States. pp.95-98, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/IMS30576.2020.9224090\">⟨10.1109/IMS30576.2020.9224090⟩</a>", "citationFull_s":"P Polovodov, Didier Theron, S. Eliet, Vanessa Avramovic, Christophe Boyaval, et al.. Operation of near-field scanning millimeter-wave microscopy up to 67 GHz under scanning electron microscopy vision. IEEE MTT International Microwave Symposium, IMS 2020, Aug 2020, Los Angeles (On-line event), United States. pp.95-98, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/IMS30576.2020.9224090\">⟨10.1109/IMS30576.2020.9224090⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03022574v1\">⟨hal-03022574⟩</a>", "title_s":["Operation of near-field scanning millimeter-wave microscopy up to 67 GHz under scanning electron microscopy vision"], "authFullName_s":["P Polovodov","Didier Theron","S. Eliet","Vanessa Avramovic","Christophe Boyaval","D. Deresmes","Gilles Dambrine","Kamel Haddadi"], "halId_s":"hal-03022574", "docType_s":"COMM", "producedDateY_i":2020 },{ "citationRef_s":"International Conference on Quantum Metrology and Sensing, Dec 2019, Paris, France", "citationFull_s":"Lucien Schwab, Pierre Allain, Didier Theron, Marc Faucher, Benjamin Walter, et al.. Optomechanics: a key towards next-generation experiments in atomic force microscopy?. International Conference on Quantum Metrology and Sensing, Dec 2019, Paris, France. <a target=\"_blank\" href=\"https://laas.hal.science/hal-02407634v1\">⟨hal-02407634⟩</a>", "title_s":["Optomechanics: a key towards next-generation experiments in atomic force microscopy?"], "authFullName_s":["Lucien Schwab","Pierre Allain","Didier Theron","Marc Faucher","Benjamin Walter","Sébastien Hentz","Guillaume Jourdan","Ivan Favero","Bernard Legrand"], "halId_s":"hal-02407634", "docType_s":"COMM", "producedDateY_i":2019 },{ "citationRef_s":"49th European Microwave Conference (EuMC), Sep 2019, Paris, France. <a target=\"_blank\" href=\"https://dx.doi.org/10.5281/zenodo.3550534\">⟨10.5281/zenodo.3550534⟩</a>", "citationFull_s":"Petr Polovodov, Didier Théron, Gilles Dambrine, Kamel Haddadi. Combined Atomic, Microwave and Electron Microscope: A tool for Hybrid Characterization of Nanomaterials. 49th European Microwave Conference (EuMC), Sep 2019, Paris, France. <a target=\"_blank\" href=\"https://dx.doi.org/10.5281/zenodo.3550534\">⟨10.5281/zenodo.3550534⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04932434v1\">⟨hal-04932434⟩</a>", "title_s":["Combined Atomic, Microwave and Electron Microscope: A tool for Hybrid Characterization of Nanomaterials"], "authFullName_s":["Petr Polovodov","Didier Théron","Gilles Dambrine","Kamel Haddadi"], "halId_s":"hal-04932434", "docType_s":"COMM", "producedDateY_i":2019 },{ "citationRef_s":"International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019, Jul 2019, Helsinki, Finland. 3 p", "citationFull_s":"Petr Polovodov, Olaf Haenssler, Didier Theron, Christophe Boyaval, Sophie Eliet, et al.. Building a near-field scanning millimeter-wave microscope integrated in a scanning electron microscope. International Conference on Manipulation, Automation, and Robotics at Small Scales, MARSS 2019, Jul 2019, Helsinki, Finland. 3 p. <a target=\"_blank\" href=\"https://hal.science/hal-02281097v1\">⟨hal-02281097⟩</a>", "title_s":["Building a near-field scanning millimeter-wave microscope integrated in a scanning electron microscope"], "authFullName_s":["Petr Polovodov","Olaf Haenssler","Didier Theron","Christophe Boyaval","Sophie Eliet","Gilles Dambrine","Kamel Haddadi"], "halId_s":"hal-02281097", "docType_s":"COMM", "producedDateY_i":2019 },{ "citationRef_s":"2019 IEEE/MTT-S International Microwave Symposium - IMS 2019, Jun 2019, Boston, France. pp.1276-1278, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/MWSYM.2019.8700783\">⟨10.1109/MWSYM.2019.8700783⟩</a>", "citationFull_s":"Kamel Haddadi, Etienne Okada, K. Daffe, F. Mubarak, Didier Theron, et al.. Multiport Vector Network Analyzer Configured in RF Interferometric Mode for Reference Impedance Renormalization. 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019, Jun 2019, Boston, France. pp.1276-1278, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/MWSYM.2019.8700783\">⟨10.1109/MWSYM.2019.8700783⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02328441v1\">⟨hal-02328441⟩</a>", "title_s":["Multiport Vector Network Analyzer Configured in RF Interferometric Mode for Reference Impedance Renormalization"], "authFullName_s":["Kamel Haddadi","Etienne Okada","K. Daffe","F. Mubarak","Didier Theron","Gilles Dambrine"], "halId_s":"hal-02328441", "docType_s":"COMM", "producedDateY_i":2019 },{ "citationRef_s":"21st International Scanning Probe Microscopy, May 2019, Louvain la Neuve, France", "citationFull_s":"P. Polovodov, Sophie Eliet, O. Haenssler, Gilles Dambrine, Kamel Haddadi, et al.. A near-field scanning microwave microscope in a scanning electron microscope: design and challenges. 21st International Scanning Probe Microscopy, May 2019, Louvain la Neuve, France. <a target=\"_blank\" href=\"https://hal.science/hal-02278736v1\">⟨hal-02278736⟩</a>", "title_s":["A near-field scanning microwave microscope in a scanning electron microscope: design and challenges"], "authFullName_s":["P. Polovodov","Sophie Eliet","O. Haenssler","Gilles Dambrine","Kamel Haddadi","Didier Theron"], "halId_s":"hal-02278736", "docType_s":"POSTER", "producedDateY_i":2019 },{ "citationRef_s":"AVS 65th International Symposium & Exhibition, American Vacuum Society, Oct 2018, Long Beach, United States", "citationFull_s":"Bernard Legrand, Lucien Schwab, Pierre Allain, Ivan Favero, Marc Faucher, et al.. [Invited] MEMS-based atomic force microscopy probes: from electromechanical to optomechanical vibrating sensors. AVS 65th International Symposium & Exhibition, American Vacuum Society, Oct 2018, Long Beach, United States. <a target=\"_blank\" href=\"https://laas.hal.science/hal-01908666v1\">⟨hal-01908666⟩</a>", "title_s":["[Invited] MEMS-based atomic force microscopy probes: from electromechanical to optomechanical vibrating sensors"], "authFullName_s":["Bernard Legrand","Lucien Schwab","Pierre Allain","Ivan Favero","Marc Faucher","Didier Theron","Benjamin Walter","Jean-Paul Salvetat","Sébastien Hentz","Guillaume Jourdan"], "halId_s":"hal-01908666", "docType_s":"COMM", "producedDateY_i":2018 },{ "citationRef_s":"2018 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), Aug 2018, Reykjavik, Iceland. pp.1-4, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/NEMO.2018.8503487\">⟨10.1109/NEMO.2018.8503487⟩</a>", "citationFull_s":"Petr Polovodov, Charlene Brillard, Olaf C Haenssler, Christophe Boyaval, D. Deresmes, et al.. Electromagnetic Modeling in Near-Field Scanning Microwave Microscopy Highlighting Limitations in Spatial and Electrical Resolutions. 2018 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), Aug 2018, Reykjavik, Iceland. pp.1-4, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/NEMO.2018.8503487\">⟨10.1109/NEMO.2018.8503487⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02155769v1\">⟨hal-02155769⟩</a>", "title_s":["Electromagnetic Modeling in Near-Field Scanning Microwave Microscopy Highlighting Limitations in Spatial and Electrical Resolutions"], "authFullName_s":["Petr Polovodov","Charlene Brillard","Olaf C Haenssler","Christophe Boyaval","D. Deresmes","Sophie Eliet","Fei Wang","Nicolas Clement","Didier Theron","Gilles Dambrine","Kamel Haddadi"], "halId_s":"hal-02155769", "docType_s":"COMM", "producedDateY_i":2018 },{ "citationRef_s":"2018 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS), Jul 2018, Nagoya, Japan. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/MARSS.2018.8481160\">⟨10.1109/MARSS.2018.8481160⟩</a>", "citationFull_s":"Kamel Haddadi, Petr Polovodov, Didier Theron, Gilles Dambrine. Quantitative Error Analysis in Near-Field Scanning Microwave Microscopy. 2018 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS), Jul 2018, Nagoya, Japan. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/MARSS.2018.8481160\">⟨10.1109/MARSS.2018.8481160⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01913677v1\">⟨hal-01913677⟩</a>", "title_s":["Quantitative Error Analysis in Near-Field Scanning Microwave Microscopy"], "authFullName_s":["Kamel Haddadi","Petr Polovodov","Didier Theron","Gilles Dambrine"], "halId_s":"hal-01913677", "docType_s":"COMM", "producedDateY_i":2018 },{ "citationRef_s":"XX Annual Linz Winter Workshop, Advances in Single-Molecule Research for Biology & Nanoscience, Feb 2018, Linz, Austria", "citationFull_s":"Didier Theron, Fei Wang, Thomas Dargent, Damien Ducatteau, Charlene Brillard, et al.. [Invited] SMM characterization of Au nanodots and FcC11SH molecules. XX Annual Linz Winter Workshop, Advances in Single-Molecule Research for Biology & Nanoscience, Feb 2018, Linz, Austria. <a target=\"_blank\" href=\"https://laas.hal.science/hal-01962187v1\">⟨hal-01962187⟩</a>", "title_s":["[Invited] SMM characterization of Au nanodots and FcC11SH molecules"], "authFullName_s":["Didier Theron","Fei Wang","Thomas Dargent","Damien Ducatteau","Charlene Brillard","Bernard Legrand","Gilles Dambrine","Kamel Haddadi","Jorge Trasobares","Dominique Vuillaume","Nicolas Clément"], "halId_s":"hal-01962187", "docType_s":"COMM", "producedDateY_i":2018 },{ "citationRef_s":"Microsystem Technologies, 2018, 24 (1), pp.371-377. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s00542-017-3293-0\">⟨10.1007/s00542-017-3293-0⟩</a>", "citationFull_s":"Christophe Morelle, Didier Theron, Joff Derluyn, Stefan Degroote, Marianne Germain, et al.. Gallium nitride MEMS resonators: how residual stress impacts design and performances. Microsystem Technologies, 2018, 24 (1), pp.371-377. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s00542-017-3293-0\">⟨10.1007/s00542-017-3293-0⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03183510v1\">⟨hal-03183510⟩</a>", "title_s":["Gallium nitride MEMS resonators: how residual stress impacts design and performances"], "authFullName_s":["Christophe Morelle","Didier Theron","Joff Derluyn","Stefan Degroote","Marianne Germain","Victor Zhang","Lionel Buchaillot","Bertrand Grimbert","Pascal Tilmant","Francois Vaurette","Isabelle Roch-Jeune","Virginie Brandli","Vanessa Avramovic","Etienne Okada","Marc Faucher"], "halId_s":"hal-03183510", "docType_s":"ART", "producedDateY_i":2018 },{ "citationRef_s":"Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2018, 36 (2), pp.022901. <a target=\"_blank\" href=\"https://dx.doi.org/10.1116/1.5006161\">⟨10.1116/1.5006161⟩</a>", "citationFull_s":"Olaf C Haenssler, Sergej Fatikow, Didier Theron. Multimodal imaging technology by integrated scanning electron, force, and microwave microscopy and its application to study microscaled capacitors. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2018, 36 (2), pp.022901. <a target=\"_blank\" href=\"https://dx.doi.org/10.1116/1.5006161\">⟨10.1116/1.5006161⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03022536v1\">⟨hal-03022536⟩</a>", "title_s":["Multimodal imaging technology by integrated scanning electron, force, and microwave microscopy and its application to study microscaled capacitors"], "authFullName_s":["Olaf C Haenssler","Sergej Fatikow","Didier Theron"], "halId_s":"hal-03022536", "docType_s":"ART", "producedDateY_i":2018 },{ "citationRef_s":"IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes, IMWS-AMP 2017, Sep 2017, Pavia, Italy. 3 p., <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/IMWS-AMP.2017.8247419\">⟨10.1109/IMWS-AMP.2017.8247419⟩</a>", "citationFull_s":"Kamel Haddadi, O. C. Haenssler, K. Daffe, S. Eliet, Christophe Boyaval, et al.. Combined scanning microwave and electron microscopy: a novel toolbox for hybrid nanoscale material analysis. IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes, IMWS-AMP 2017, Sep 2017, Pavia, Italy. 3 p., <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/IMWS-AMP.2017.8247419\">⟨10.1109/IMWS-AMP.2017.8247419⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03224651v1\">⟨hal-03224651⟩</a>", "title_s":["Combined scanning microwave and electron microscopy: a novel toolbox for hybrid nanoscale material analysis"], "authFullName_s":["Kamel Haddadi","O. C. Haenssler","K. Daffe","S. 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Ultramicroscopy, 2017, 175, pp.46 - 57. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.ultramic.2017.01.005\">⟨10.1016/j.ultramic.2017.01.005⟩</a>. <a target=\"_blank\" href=\"https://laas.hal.science/hal-01765180v1\">⟨hal-01765180⟩</a>", "title_s":["Multi-MHz micro-electro-mechanical sensors for atomic force microscopy"], "authFullName_s":["Bernard Legrand","Jean-Paul Salvetat","Benjamin Walter","Marc Faucher","Didier Theron","Jean-Pierre Aimé"], "halId_s":"hal-01765180", "docType_s":"ART", "producedDateY_i":2017 },{ "citationRef_s":"Nano Letters, 2017, 17 (5), pp.3215. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acs.nanolett.7b00804\">⟨10.1021/acs.nanolett.7b00804⟩</a>", "citationFull_s":"Jorge Trasobares, Jérôme Rech, Thibaut Jonckheere, Thierry Martin, Olivier Alévêque, et al.. Estimation of π–π electronic couplings from current measurements. Nano Letters, 2017, 17 (5), pp.3215. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acs.nanolett.7b00804\">⟨10.1021/acs.nanolett.7b00804⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01588172v1\">⟨hal-01588172⟩</a>", "title_s":["Estimation of π–π electronic couplings from current measurements"], "authFullName_s":["Jorge Trasobares","Jérôme Rech","Thibaut Jonckheere","Thierry Martin","Olivier Alévêque","E. Levillain","Valentin Diez-Cabanes","Yoann Olivier","Jérôme Cornil","Jean-Philippe Nys","Ragavendran Sivakumarasamy","Kacem Smaali","Philippe Leclere","A Fujiwara","Didier Theron","Dominique Vuillaume","Nicolas Clément"], "halId_s":"hal-01588172", "docType_s":"ART", "producedDateY_i":2017 },{ "citationRef_s":"Nature Communications, 2016, 7 (1), pp.12850. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/ncomms12850\">⟨10.1038/ncomms12850⟩</a>", "citationFull_s":"J. Trasobares, Dominique Vuillaume, Didier Theron, Nicolas Clement. A 17 GHz molecular rectifier. 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Influence of passivation on high-power AlGaN/GaN HEMT devices at 10 GHz. 2004, pp.203-206. <a target=\"_blank\" href=\"https://hal.science/hal-00142304v1\">⟨hal-00142304⟩</a>", "title_s":["Influence of passivation on high-power AlGaN/GaN HEMT devices at 10 GHz"], "authFullName_s":["D. Ducatteau","M. Werquin","Christophe Gaquière","D. Theron","T. Martin","E. Delos","B. Grimbert","E. Morvan","N. Caillas","Virginie Hoel","Jean-Claude de Jaeger","S. Delage"], "halId_s":"hal-00142304", "docType_s":"COMM", "producedDateY_i":2004 },{ "citationRef_s":"RF & Hyper Europe 2004, 2004, Paris, France", "citationFull_s":"Jean-Claude de Jaeger, N. Caillas, E. Chartier, Gilles Dambrine, S. Delage, et al.. AlGaN/GaN HEMTs : technology and microwave performances. RF & Hyper Europe 2004, 2004, Paris, France. <a target=\"_blank\" href=\"https://hal.science/hal-00141961v1\">⟨hal-00141961⟩</a>", "title_s":["AlGaN/GaN HEMTs : technology and microwave performances"], "authFullName_s":["Jean-Claude de Jaeger","N. Caillas","E. Chartier","Gilles Dambrine","S. Delage","E. Delos","D. Ducatteau","D. Floriot","Christophe Gaquière","B. Grimbert","Virginie Hoel","E. Morvan","M.A. Poisson","Michel Rousseau","D. Theron"], "halId_s":"hal-00141961", "docType_s":"COMM", "producedDateY_i":2004 },{ "citationRef_s":"Superlattices and Microstructures, 2004, 36, pp.435-443", "citationFull_s":"P. Muret, C. Ulzhöfer, J. Pernot, Y. Cordier, F. Semond, et al.. Electronic properties of deep defects in n-type GaN. Superlattices and Microstructures, 2004, 36, pp.435-443. <a target=\"_blank\" href=\"https://hal.science/hal-00141959v1\">⟨hal-00141959⟩</a>", "title_s":["Electronic properties of deep defects in n-type GaN"], "authFullName_s":["P. Muret","C. Ulzhöfer","J. 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Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer. 2002, pp.57-62. <a target=\"_blank\" href=\"https://hal.science/hal-00149710v1\">⟨hal-00149710⟩</a>", "title_s":["Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer"], "authFullName_s":["F Medjdoub","D. Theron","F. Dessenne","R. Fauquembergue","Jean-Claude de Jaeger"], "halId_s":"hal-00149710", "docType_s":"COMM", "producedDateY_i":2002 },{ "citationRef_s":"Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States", "citationFull_s":"M. Zaknoune, X. Wallart, F Medjdoub, M. Ardouin, B. Bonte, et al.. AlInAs/GaInAs HEMTs for power amplification at 60 GHz. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States. <a target=\"_blank\" href=\"https://hal.science/hal-00149711v1\">⟨hal-00149711⟩</a>", "title_s":["AlInAs/GaInAs HEMTs for power amplification at 60 GHz"], "authFullName_s":["M. Zaknoune","X. Wallart","F Medjdoub","M. Ardouin","B. Bonte","D. Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00149711", "docType_s":"COMM", "producedDateY_i":2002 },{ "citationRef_s":"9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aigulf, France", "citationFull_s":"M. Zaknoune, M. Ardouin, B. Bonte, Y. Cordier, S. Bollaert, et al.. Performance à 60 GHz de HEMTs métamorphiques sur GaAs utilisant une technologie à double recess. 9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aigulf, France. <a target=\"_blank\" href=\"https://hal.science/hal-00149738v1\">⟨hal-00149738⟩</a>", "title_s":["Performance à 60 GHz de HEMTs métamorphiques sur GaAs utilisant une technologie à double recess"], "authFullName_s":["M. Zaknoune","M. Ardouin","B. Bonte","Y. Cordier","S. Bollaert","D. Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00149738", "docType_s":"COMM", "producedDateY_i":2002 },{ "citationRef_s":"IEEE Electron Device Letters, 2001, 22 (6), pp.257-259. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/55.924834\">⟨10.1109/55.924834⟩</a>", "citationFull_s":"Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron. A 0.15µm 60GHz high-power composite channel GaInAs/InP HEMT with low gate current. IEEE Electron Device Letters, 2001, 22 (6), pp.257-259. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/55.924834\">⟨10.1109/55.924834⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00152592v1\">⟨hal-00152592⟩</a>", "title_s":["A 0.15µm 60GHz high-power composite channel GaInAs/InP HEMT with low gate current"], "authFullName_s":["Mustafa Boudrissa","Elisabet Delos","X. Wallart","Didier Theron"], "halId_s":"hal-00152592", "docType_s":"ART", "producedDateY_i":2001 },{ "citationRef_s":"IEEE Transactions on Electron Devices, 2001, 48 (6), pp.1037-1044. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/16.925223\">⟨10.1109/16.925223⟩</a>", "citationFull_s":"Mustafa Boudrissa, Elisabet Delos, Christophe Gaquière, Michel Rousseau, Yvon Cordier, et al.. Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement. IEEE Transactions on Electron Devices, 2001, 48 (6), pp.1037-1044. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/16.925223\">⟨10.1109/16.925223⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00152595v1\">⟨hal-00152595⟩</a>", "title_s":["Enhancement-mode Al0.66InO.34As/Ga0.67In0.33As metamorphic HEMT : modeling and measurement"], "authFullName_s":["Mustafa Boudrissa","Elisabet Delos","Christophe Gaquière","Michel Rousseau","Yvon Cordier","Didier Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00152595", "docType_s":"ART", "producedDateY_i":2001 },{ "citationRef_s":"XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, May 2001, Cagliari, Sardinia, Italy", "citationFull_s":"Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger. 60 GHz 420 mW/mm low gate current GaInAs/InP composite channel HEMT on InP substrate. XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, May 2001, Cagliari, Sardinia, Italy. <a target=\"_blank\" href=\"https://hal.science/hal-00152631v1\">⟨hal-00152631⟩</a>", "title_s":["60 GHz 420 mW/mm low gate current GaInAs/InP composite channel HEMT on InP substrate"], "authFullName_s":["Mustafa Boudrissa","Elisabet Delos","X. Wallart","Didier Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00152631", "docType_s":"COMM", "producedDateY_i":2001 },{ "citationRef_s":"Actes des 12èmes Journées Nationales Microondes, JNM 2001, May 2001, Poitiers, France", "citationFull_s":"Didier Theron, Mustafa Boudrissa, Elisabet Delos, X. Wallart, Jean-Claude de Jaeger. Influence du dopage dans les transistors HEMT à canal composite pour amplification de puissance en ondes millimétriques. Actes des 12èmes Journées Nationales Microondes, JNM 2001, May 2001, Poitiers, France. <a target=\"_blank\" href=\"https://hal.science/hal-00152653v1\">⟨hal-00152653⟩</a>", "title_s":["Influence du dopage dans les transistors HEMT à canal composite pour amplification de puissance en ondes millimétriques"], "authFullName_s":["Didier Theron","Mustafa Boudrissa","Elisabet Delos","X. Wallart","Jean-Claude de Jaeger"], "halId_s":"hal-00152653", "docType_s":"COMM", "producedDateY_i":2001 },{ "citationRef_s":"Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM, May 2001, Nara, Japan. pp.196-199, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ICIPRM.2001.929091\">⟨10.1109/ICIPRM.2001.929091⟩</a>", "citationFull_s":"Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger. A 60 GHz high power composite channel GaInAs/InP HEMT on InP substrate with Lg=0.15 µm. Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM, May 2001, Nara, Japan. pp.196-199, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ICIPRM.2001.929091\">⟨10.1109/ICIPRM.2001.929091⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00152622v1\">⟨hal-00152622⟩</a>", "title_s":["A 60 GHz high power composite channel GaInAs/InP HEMT on InP substrate with Lg=0.15 µm"], "authFullName_s":["Mustafa Boudrissa","Elisabet Delos","X. Wallart","Didier Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00152622", "docType_s":"COMM", "producedDateY_i":2001 },{ "citationRef_s":"8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, Jan 2001, Aussois, France", "citationFull_s":"Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger. Performances en puissance à 60 GHz du HEMT à canal composite GaInAs/InP sur substrat InP avec LG = 0.15 µm. 8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, Jan 2001, Aussois, France. <a target=\"_blank\" href=\"https://hal.science/hal-00152915v1\">⟨hal-00152915⟩</a>", "title_s":["Performances en puissance à 60 GHz du HEMT à canal composite GaInAs/InP sur substrat InP avec LG = 0.15 µm"], "authFullName_s":["Mustafa Boudrissa","Elisabet Delos","X. Wallart","Didier Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00152915", "docType_s":"COMM", "producedDateY_i":2001 },{ "citationRef_s":"Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2001, 2001, New Orleans, LA, United States", "citationFull_s":"D. Theron, Christophe Gaquière, N. Vellas, B. Boudart, Y. Guhel, et al.. Characterisation of GaN FETs under pulsed conditions : DC and RF measurements from room temperature up to 250°C. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2001, 2001, New Orleans, LA, United States. <a target=\"_blank\" href=\"https://hal.science/hal-00152673v1\">⟨hal-00152673⟩</a>", "title_s":["Characterisation of GaN FETs under pulsed conditions : DC and RF measurements from room temperature up to 250°C"], "authFullName_s":["D. Theron","Christophe Gaquière","N. Vellas","B. Boudart","Y. Guhel","Jean-Claude de Jaeger"], "halId_s":"hal-00152673", "docType_s":"COMM", "producedDateY_i":2001 },{ "citationRef_s":"2001, pp.53-56", "citationFull_s":"D. Theron, Y. Cordier, X. Wallart, S. Bollaert, M. Zaknoune, et al.. HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range. 2001, pp.53-56. <a target=\"_blank\" href=\"https://hal.science/hal-00152625v1\">⟨hal-00152625⟩</a>", "title_s":["HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range"], "authFullName_s":["D. Theron","Y. Cordier","X. 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Rogeaux, J.P. Fraysse, C. Schaffauser, S. George, D. Pons, et al.. Ka band power pHEMT technology for space power flip-chip assembly. 2001, pp.1895-1898. <a target=\"_blank\" href=\"https://hal.science/hal-00152621v1\">⟨hal-00152621⟩</a>", "title_s":["Ka band power pHEMT technology for space power flip-chip assembly"], "authFullName_s":["E. Rogeaux","J.P. Fraysse","C. Schaffauser","S. George","D. Pons","P. Fellon","D. Geiger","D. Theron","N. Haese","Serge Verdeyme","R. Quere","Dominique Baillargeat","E. Ngoya","S. Long","Laurent Escotte"], "halId_s":"hal-00152621", "docType_s":"COMM", "producedDateY_i":2001 },{ "citationRef_s":"IEEE Electron Device Letters, 2001, 22, pp.62-64", "citationFull_s":"I. Daumiller, Didier Theron, Christophe Gaquière, A. Vescan, R. Dietriech, et al.. Current instabilities in GaN-based devices. 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Solid-State Electronics, 2000, 44 (9), pp.1685-1688. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/S0038-1101(00)00060-5\">⟨10.1016/S0038-1101(00)00060-5⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00158982v1\">⟨hal-00158982⟩</a>", "title_s":["0,1-µm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs"], "authFullName_s":["M. Zaknoune","Y. Cordier","S. Bollaert","D. Ferre","D. Theron","Y. Crosnier"], "halId_s":"hal-00158982", "docType_s":"ART", "producedDateY_i":2000 },{ "citationRef_s":"The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8", "citationFull_s":"Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger. Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate. The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8. <a target=\"_blank\" href=\"https://hal.science/hal-00159007v1\">⟨hal-00159007⟩</a>", "title_s":["Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate"], "authFullName_s":["Mustafa Boudrissa","Elisabet Delos","Yvon Cordier","Didier Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00159007", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece", "citationFull_s":"Didier Theron, Yvon Cordier, X. Wallart, S. Bollaert, Mohammed Zaknoune, et al.. 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Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate. 30th European Microwave Conferences, 2000, Paris, France. pp.90-93. <a target=\"_blank\" href=\"https://hal.science/hal-00159006v1\">⟨hal-00159006⟩</a>", "title_s":["Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate"], "authFullName_s":["Mustafa Boudrissa","Elisabet Delos","Yvon Cordier","Didier Theron","Jean-Claude de Jaeger"], "halId_s":"hal-00159006", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"Journal of Electronic Materials, 2000, 29, pp.603-606", "citationFull_s":"B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, et al.. Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN. Journal of Electronic Materials, 2000, 29, pp.603-606. <a target=\"_blank\" href=\"https://hal.science/hal-00158984v1\">⟨hal-00158984⟩</a>", "title_s":["Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN"], "authFullName_s":["B. Boudart","S. Trassaert","X. Wallart","J.C. Pesant","O. Yaradou","D. Theron","Y. Crosnier","H. Lahreche","F. Omnes"], "halId_s":"hal-00158984", "docType_s":"ART", "producedDateY_i":2000 },{ "citationRef_s":"IEEE Microwave and Guided Wave Letters, 2000, 10, pp.19-20", "citationFull_s":"Christophe Gaquière, S. Trassaert, B. Boudart, D. Theron, Y. Crosnier. High power GaN MESFET's on sapphire substrate. IEEE Microwave and Guided Wave Letters, 2000, 10, pp.19-20. <a target=\"_blank\" href=\"https://hal.science/hal-00158979v1\">⟨hal-00158979⟩</a>", "title_s":["High power GaN MESFET's on sapphire substrate"], "authFullName_s":["Christophe Gaquière","S. Trassaert","B. Boudart","D. Theron","Y. 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AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT. 2000, pp.353-356. <a target=\"_blank\" href=\"https://hal.science/hal-00159004v1\">⟨hal-00159004⟩</a>", "title_s":["AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT"], "authFullName_s":["M. Zaknoune","O. Schuler","X. Wallart","S. Piotrowicz","F. Mollot","D. Theron","Y. Crosnier"], "halId_s":"hal-00159004", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"Solid-State Electronics, 2000, 44, pp.1021-1027", "citationFull_s":"S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, Virginie Hoel, et al.. The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter. Solid-State Electronics, 2000, 44, pp.1021-1027. <a target=\"_blank\" href=\"https://hal.science/hal-00157879v1\">⟨hal-00157879⟩</a>", "title_s":["The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter"], "authFullName_s":["S. Bollaert","Y. Cordier","M. Zaknoune","H. Happy","Virginie Hoel","Sylvie Lepilliet","D. Theron","A. Cappy"], "halId_s":"hal-00157879", "docType_s":"ART", "producedDateY_i":2000 },{ "citationRef_s":"Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2000, 2000, San Diego, CA, United States", "citationFull_s":"D. Theron, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger. RF power MISFET's using thin LT GaAs as a passivator. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2000, 2000, San Diego, CA, United States. <a target=\"_blank\" href=\"https://hal.science/hal-00159031v1\">⟨hal-00159031⟩</a>", "title_s":["RF power MISFET's using thin LT GaAs as a passivator"], "authFullName_s":["D. Theron","B. Boudart","Christophe Gaquière","Jean-Claude de Jaeger"], "halId_s":"hal-00159031", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy", "citationFull_s":"B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, et al.. GaN MESFETs for power and high temperature applications. NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. <a target=\"_blank\" href=\"https://hal.science/hal-00159032v1\">⟨hal-00159032⟩</a>", "title_s":["GaN MESFETs for power and high temperature applications"], "authFullName_s":["B. 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Etude du contact ohmique Ti/Al/Ni/Au sur n-GaN pour applications hyperfréquences et haute température de TECs de puissance. 7es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1999, Egat, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654466v1\">⟨hal-01654466⟩</a>", "title_s":["Etude du contact ohmique Ti/Al/Ni/Au sur n-GaN pour applications hyperfréquences et haute température de TECs de puissance"], "authFullName_s":["B. Boudart","S. Trassaert","Xavier Wallart","J.C. Pesant","L Fugère","Didier Theron","Y. Crosnier"], "halId_s":"hal-01654466", "docType_s":"COMM", "producedDateY_i":1999 },{ "citationRef_s":"1st Gallium Nitride Electronic Device Workshop, 1999, Cornell, United States", "citationFull_s":"Erhard Kohn, E Strobel, I. Daumiller, Christophe Gaquière, B. Boudart, et al.. 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Electronics Letters, 1999, 35 (16), <a target=\"_blank\" href=\"https://dx.doi.org/10.1049/el:19990887\">⟨10.1049/el:19990887⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647642v1\">⟨hal-01647642⟩</a>", "title_s":["Trap effects studies in GaN MESFETs by pulsed measurements"], "authFullName_s":["S. Trassaert","B. Boudart","Christophe Gaquière","Didier Theron","Y. Crosnier","F. Huet","M.A. Poisson"], "halId_s":"hal-01647642", "docType_s":"ART", "producedDateY_i":1999 },{ "citationRef_s":"GDR Matériaux Grand Gap, 1998, Villeneuve d'Ascq, France", "citationFull_s":"S. Trassaert, B. Boudart, Xavier Wallart, J.C. Pesant, L Fugère, et al.. Etude du contact Ti/Al/Ni/Au sur GaN. GDR Matériaux Grand Gap, 1998, Villeneuve d'Ascq, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654461v1\">⟨hal-01654461⟩</a>", "title_s":["Etude du contact Ti/Al/Ni/Au sur GaN"], "authFullName_s":["S. Trassaert","B. Boudart","Xavier Wallart","J.C. Pesant","L Fugère","Didier Theron","Y. Crosnier"], "halId_s":"hal-01654461", "docType_s":"COMM", "producedDateY_i":1998 },{ "citationRef_s":"8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom", "citationFull_s":"S. Trassaert, B. Boudart, Xavier Wallart, Didier Theron, Y. Crosnier. Study of the Ti/Al/Ni/Au ohmic contact on n-GaN for high temperature applications. 8th European Workshop on Heterostructure Technology (HETECH), 1998, Cardiff, United Kingdom. <a target=\"_blank\" href=\"https://hal.science/hal-01654296v1\">⟨hal-01654296⟩</a>", "title_s":["Study of the Ti/Al/Ni/Au ohmic contact on n-GaN for high temperature applications"], "authFullName_s":["S. Trassaert","B. Boudart","Xavier Wallart","Didier Theron","Y. Crosnier"], "halId_s":"hal-01654296", "docType_s":"COMM", "producedDateY_i":1998 },{ "citationRef_s":"IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997, londres, United Kingdom", "citationFull_s":"Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, et al.. Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs. IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997, londres, United Kingdom. <a target=\"_blank\" href=\"https://hal.science/hal-01649377v1\">⟨hal-01649377⟩</a>", "title_s":["Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs"], "authFullName_s":["Didier Theron","B. Boudart","Christophe Gaquière","Georges Salmer","M. Lipka","B. Splingart","Erhard Kohn"], "halId_s":"hal-01649377", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"GDR Matériaux Grand Gap, 1997, Nice Sophia Antipolis, France", "citationFull_s":"Didier Theron, F. Dessenne, R. Fauquembergue, X. Hue, B. Boudart, et al.. Projets et premiers résultats de modélisation et de technologie dans la filière HEMT GaN. GDR Matériaux Grand Gap, 1997, Nice Sophia Antipolis, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654458v1\">⟨hal-01654458⟩</a>", "title_s":["Projets et premiers résultats de modélisation et de technologie dans la filière HEMT GaN"], "authFullName_s":["Didier Theron","F. Dessenne","R. Fauquembergue","X. Hue","B. Boudart","Xavier Wallart","J. Laurens","Monique Constant"], "halId_s":"hal-01654458", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"IEEE Workshop Experimentally based FET device modelling & Related nonlinear circuit design, 1997, Kassel, Germany", "citationFull_s":"Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, et al.. Characterisation of LT GaAs FET’s as a function of the temperature. IEEE Workshop Experimentally based FET device modelling & Related nonlinear circuit design, 1997, Kassel, Germany. <a target=\"_blank\" href=\"https://hal.science/hal-01648141v1\">⟨hal-01648141⟩</a>", "title_s":["Characterisation of LT GaAs FET’s as a function of the temperature"], "authFullName_s":["Didier Theron","B. Boudart","Christophe Gaquière","Georges Salmer","M. Lipka","B. Splingart","Erhard Kohn"], "halId_s":"hal-01648141", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"6es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1997, Chantilly, France", "citationFull_s":"Didier Theron, B. Boudart, Y. Druelle, Georges Salmer, M. Lipka, et al.. Utilisation du GaAs épitaxié à basse température pour augmenter la densité de puissance des TECs. 6es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1997, Chantilly, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654456v1\">⟨hal-01654456⟩</a>", "title_s":["Utilisation du GaAs épitaxié à basse température pour augmenter la densité de puissance des TECs"], "authFullName_s":["Didier Theron","B. Boudart","Y. Druelle","Georges Salmer","M. Lipka","Erhard Kohn"], "halId_s":"hal-01654456", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"Electronics Letters, 1997, 33 (17), <a target=\"_blank\" href=\"https://dx.doi.org/10.1049/el:19971002\">⟨10.1049/el:19971002⟩</a>", "citationFull_s":"B. Boudart, Christophe Gaquière, Didier Theron. Gate current analysis of LT-GaAs passivated MESFETs. Electronics Letters, 1997, 33 (17), <a target=\"_blank\" href=\"https://dx.doi.org/10.1049/el:19971002\">⟨10.1049/el:19971002⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647646v1\">⟨hal-01647646⟩</a>", "title_s":["Gate current analysis of LT-GaAs passivated MESFETs"], "authFullName_s":["B. Boudart","Christophe Gaquière","Didier Theron"], "halId_s":"hal-01647646", "docType_s":"ART", "producedDateY_i":1997 },{ "citationRef_s":"Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), 1997, Londres, United Kingdom", "citationFull_s":"Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, et al.. Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FET’s. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), 1997, Londres, United Kingdom. <a target=\"_blank\" href=\"https://hal.science/hal-01654293v1\">⟨hal-01654293⟩</a>", "title_s":["Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FET’s"], "authFullName_s":["Didier Theron","B. Boudart","Christophe Gaquière","Georges Salmer","M. Lipka","B. Splingart","Erhard Kohn"], "halId_s":"hal-01654293", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M\">⟨10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M⟩</a>", "citationFull_s":"B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, et al.. Small- and large-signal measurements of low-temperature GaAs FETs. Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M\">⟨10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647683v1\">⟨hal-01647683⟩</a>", "title_s":["Small- and large-signal measurements of low-temperature GaAs FETs"], "authFullName_s":["B. Boudart","Christophe Gaquière","S. Trassaert","Didier Theron","B. Splingart","M. Lipka","E. Kohn"], "halId_s":"hal-01647683", "docType_s":"ART", "producedDateY_i":1996 },{ "citationRef_s":"23rd Symposium on compound semiconductors, 1996, St Petersburg, Russia", "citationFull_s":"Didier Theron, Mohamed Zaknoune, B. Boudart, Jean-Claude de Jaeger, Georges Salmer, et al.. LT GaAs HFET: a novel concept to overcome the breakdown limitation. 23rd Symposium on compound semiconductors, 1996, St Petersburg, Russia. <a target=\"_blank\" href=\"https://hal.science/hal-01648139v1\">⟨hal-01648139⟩</a>", "title_s":["LT GaAs HFET: a novel concept to overcome the breakdown limitation"], "authFullName_s":["Didier Theron","Mohamed Zaknoune","B. Boudart","Jean-Claude de Jaeger","Georges Salmer","M. Lipka","M. Birk","H. Heinecke","B. Splingart","Erhard Kohn","Hugues Thomas","D. V. Morgan","J. Schneider"], "halId_s":"hal-01648139", "docType_s":"COMM", "producedDateY_i":1996 },{ "citationRef_s":"Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States", "citationFull_s":"Didier Theron, B. Boudart, Mohamed Zaknoune, Francis Mollot, Y. Druelle, et al.. -low temperature GaAs/GaInP FET: device technology and characterization. Workshop on non-stoichiometric GaAs and related materials, 1996, Santa Barbara, United States. <a target=\"_blank\" href=\"https://hal.science/hal-01654286v1\">⟨hal-01654286⟩</a>", "title_s":["-low temperature GaAs/GaInP FET: device technology and characterization"], "authFullName_s":["Didier Theron","B. Boudart","Mohamed Zaknoune","Francis Mollot","Y. Druelle","Henri Gérard","Georges Salmer","M. Lipka","R. Westphalen","Erhard Kohn"], "halId_s":"hal-01654286", "docType_s":"COMM", "producedDateY_i":1996 },{ "citationRef_s":"Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, Ithaca, United States", "citationFull_s":"M. Lipka, B. Splingart, R. Westphalen, Erhard Kohn, Didier Theron, et al.. Low temperature grown GaAs lossy dielectric heterostructure FET. Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1995, Ithaca, United States. <a target=\"_blank\" href=\"https://hal.science/hal-01648127v1\">⟨hal-01648127⟩</a>", "title_s":["Low temperature grown GaAs lossy dielectric heterostructure FET"], "authFullName_s":["M. Lipka","B. Splingart","R. Westphalen","Erhard Kohn","Didier Theron","B. Boudart","Georges Salmer","L.L. Pond","C.E. Weitzel"], "halId_s":"hal-01648127", "docType_s":"COMM", "producedDateY_i":1995 },{ "citationRef_s":"19th Workshop On Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) , 1995, Stockholm, Sweden", "citationFull_s":"B. Boudart, E. Delos, F. Ducroquet, Henri Gérard, Didier Theron, et al.. Transconductance dispersion in LT GaAs MISFET’s. 19th Workshop On Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) , 1995, Stockholm, Sweden. <a target=\"_blank\" href=\"https://hal.science/hal-01654284v1\">⟨hal-01654284⟩</a>", "title_s":["Transconductance dispersion in LT GaAs MISFET’s"], "authFullName_s":["B. Boudart","E. Delos","F. Ducroquet","Henri Gérard","Didier Theron","M. Lipka","B. Splingart","Erhard Kohn"], "halId_s":"hal-01654284", "docType_s":"COMM", "producedDateY_i":1995 },{ "citationRef_s":"9es Journées Nationales Microondes, 1995, Paris, France", "citationFull_s":"B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, et al.. Mesures pulsées de TEC à grille isolée par du GaAs basse température. 9es Journées Nationales Microondes, 1995, Paris, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654242v1\">⟨hal-01654242⟩</a>", "title_s":["Mesures pulsées de TEC à grille isolée par du GaAs basse température"], "authFullName_s":["B. Boudart","Christophe Gaquière","S. Trassaert","Didier Theron","B. Splingart","M. Lipka","Erhard Kohn"], "halId_s":"hal-01654242", "docType_s":"COMM", "producedDateY_i":1995 },{ "citationRef_s":"5es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1994, Ecully, France", "citationFull_s":"Didier Theron, B. Boudart, Christophe Robert, Xavier Wallart, Y. Druelle. GaAs basse température : de la croissance à la réalisation de composants MISFETs. 5es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1994, Ecully, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654453v1\">⟨hal-01654453⟩</a>", "title_s":["GaAs basse température : de la croissance à la réalisation de composants MISFETs"], "authFullName_s":["Didier Theron","B. Boudart","Christophe Robert","Xavier Wallart","Y. Druelle"], "halId_s":"hal-01654453", "docType_s":"COMM", "producedDateY_i":1994 },{ "citationRef_s":"4th European Workshop on Heterostructure Technology (HETECH), 1994, Ulm, Germany", "citationFull_s":"B. Boudart, Christophe Robert, Didier Theron, R. Westphalen. Photolithography for recessed lift-off technology application to low temperature GaAs MISFET’s ohmic contacts. 4th European Workshop on Heterostructure Technology (HETECH), 1994, Ulm, Germany. <a target=\"_blank\" href=\"https://hal.science/hal-01654282v1\">⟨hal-01654282⟩</a>", "title_s":["Photolithography for recessed lift-off technology application to low temperature GaAs MISFET’s ohmic contacts"], "authFullName_s":["B. Boudart","Christophe Robert","Didier Theron","R. Westphalen"], "halId_s":"hal-01654282", "docType_s":"COMM", "producedDateY_i":1994 },{ "citationRef_s":"5es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1994, Ecully, France", "citationFull_s":"E Bourcier, Christophe Robert, Christophe Gaquière, B. Boudart, Didier Theron, et al.. Réalisation et caractérisation de TEC GaAs à grille isolée par GaAs épitaxié à basse température. 5es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1994, Ecully, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654454v1\">⟨hal-01654454⟩</a>", "title_s":["Réalisation et caractérisation de TEC GaAs à grille isolée par GaAs épitaxié à basse température"], "authFullName_s":["E Bourcier","Christophe Robert","Christophe Gaquière","B. Boudart","Didier Theron","Georges Salmer"], "halId_s":"hal-01654454", "docType_s":"COMM", "producedDateY_i":1994 },{ "citationRef_s":"Materials Science and Engineering: B, 1993, 22 (1), pp.78 - 81. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/0921-5107(93)90227-E\">⟨10.1016/0921-5107(93)90227-E⟩</a>", "citationFull_s":"R. Westphalen, B. Boudart, Didier Theron, X. Wallart, Y. Druelle, et al.. Temperature measurements of LT GaAs diodes. Materials Science and Engineering: B, 1993, 22 (1), pp.78 - 81. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/0921-5107(93)90227-E\">⟨10.1016/0921-5107(93)90227-E⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647734v1\">⟨hal-01647734⟩</a>", "title_s":["Temperature measurements of LT GaAs diodes"], "authFullName_s":["R. Westphalen","B. Boudart","Didier Theron","X. Wallart","Y. Druelle","Y. Crosnier"], "halId_s":"hal-01647734", "docType_s":"ART", "producedDateY_i":1993 },{ "citationRef_s":"3rd European Workshop on Heterostructure Technology (HETECH), 1993, Villeneuve d'Ascq, France", "citationFull_s":"Didier Theron, B. Boudart, R. Westphalen, Xavier Wallart, Y. Druelle. Growth of low temperature GaAs on GaAs under different conditions. 3rd European Workshop on Heterostructure Technology (HETECH), 1993, Villeneuve d'Ascq, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654281v1\">⟨hal-01654281⟩</a>", "title_s":["Growth of low temperature GaAs on GaAs under different conditions"], "authFullName_s":["Didier Theron","B. Boudart","R. Westphalen","Xavier Wallart","Y. Druelle"], "halId_s":"hal-01654281", "docType_s":"COMM", "producedDateY_i":1993 },{ "citationRef_s":"European Materials Research Society, 1993, Strasbourg, France", "citationFull_s":"R. Westphalen, B. Boudart, Didier Theron, Xavier Wallart, Y. Druelle, et al.. Temperature measurements of LT-GaAs diodes. European Materials Research Society, 1993, Strasbourg, France. <a target=\"_blank\" href=\"https://hal.science/hal-01648117v1\">⟨hal-01648117⟩</a>", "title_s":["Temperature measurements of LT-GaAs diodes"], "authFullName_s":["R. Westphalen","B. Boudart","Didier Theron","Xavier Wallart","Y. Druelle","Y. Crosnier"], "halId_s":"hal-01648117", "docType_s":"COMM", "producedDateY_i":1993 }] } }

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Didier Théron

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