Research activity mainly linked to the arrival of power semiconductor components based on wide-bandgap materials, in particular in gallium nitride (GaN), which offer great prospects for improving the efficiency and power density of converters, at the cost of an increase in high-frequency electromagnetic disturbances due to the high switching frequencies and fast switching speeds. It is therefore necessary to propose design solutions adapted to the frequency rise in power electronics and to finely characterize the behaviour of, both, disturbances sources (semiconductor components), and propagation paths (cables, passive components and filters, loads, PCBs), in order to control their behaviour and propose models that remain valid in a wide frequency range (covering the band considered by electromagnetic compatibility standards). These tools can then be used to improve the performance of power converters, in particular through proper control of the fast switching processes and reduction of EMC disturbances by means of filtering techniques (of which the impact in volume is to be minimized) or appropriate modulation methods for various power converter topologies.

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