Nour-Eddine Bourzgui
Maître de conférences
CNU : SECTION 63 - ELECTRONIQUE, OPTRONIQUE ET SYSTEMES
Laboratoire / équipe
Publications
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"title_s":["Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices"],
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"citationRef_s":"<i>Applied Physics Letters</i>, 2022, 120 (4), pp.042102. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0080240\">⟨10.1063/5.0080240⟩</a>",
"citationFull_s":"Ali Soltani, Brahim Benbakhti, J.-C. Gerbedoen, Abdelkrim Khediri, Maher, Hassan, et al.. A cost-effective technology to improve power performance of nanoribbons GaN HEMTs. <i>Applied Physics Letters</i>, 2022, 120 (4), pp.042102. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0080240\">⟨10.1063/5.0080240⟩</a>. <a target=\"_blank\" href=\"https://cnrs.hal.science/hal-03544158v1\">⟨hal-03544158⟩</a>",
"title_s":["A cost-effective technology to improve power performance of nanoribbons GaN HEMTs"],
"authFullName_s":["Ali Soltani","Brahim Benbakhti","J.-C. Gerbedoen","Abdelkrim Khediri","Maher, Hassan","Jean-Paul Salvestrini","Abdallah Ougazzaden","Nour Eddine Bourzgui","Hassan Ali Barkad"],
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"citationFull_s":"Hassane Ouazzani Chahdi, Omar Helli, Nour Eddine Bourzgui, Leo Breuil, David Danovich, et al.. A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors. <i>18th International Meeting on Chemical Sensors, IMCS 2020</i>, May 2020, Montreal, Canada. 2310, 1 page, <a target=\"_blank\" href=\"https://dx.doi.org/10.1149/MA2020-01312310mtgabs\">⟨10.1149/MA2020-01312310mtgabs⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02879903v1\">⟨hal-02879903⟩</a>",
"title_s":["A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors"],
"authFullName_s":["Hassane Ouazzani Chahdi","Omar Helli","Nour Eddine Bourzgui","Leo Breuil","David Danovich","Paul L Voss","Sundaram Suresh","Vincent Aubry","Yacine Halfaya","Abdallah Ougazzaden","Jean-Paul Salvestrini","Maher, Hassan","Ali Soltani"],
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"citationFull_s":"Steven Duffy, Brahim Benbakhti, Wei Zhang, Khaled Ahmeda, Karol Kalna, et al.. A parametric technique for trap characterization in AlGaN/GaN HEMTs. <i>IEEE Transactions on Electron Devices</i>, 2020, 67 (5), pp.1924-1930. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TED.2020.2980329\">⟨10.1109/TED.2020.2980329⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03142223v1\">⟨hal-03142223⟩</a>",
"title_s":["A parametric technique for trap characterization in AlGaN/GaN HEMTs"],
"authFullName_s":["Steven Duffy","Brahim Benbakhti","Wei Zhang","Khaled Ahmeda","Karol Kalna","Mohammed Boucherta","Maghnia Mattalah","Hassane Ouazzani Chahdi","Nour Eddine Bourzgui","Ali Soltani"],
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"citationFull_s":"Hassane Ouazzani Chahdi, Brahim Benbakhti, Maghnia Mattalah, Jean Claude Gerbedoen, Abdelatif Jaouad, et al.. Mechanisms of a rectifying TiN gate contact for AlGaN/GaN HEMTs on silicon substrate. <i>IEEE Transactions on Nanotechnology</i>, 2020, 19, pp.682-688. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TNANO.2020.3019916\">⟨10.1109/TNANO.2020.3019916⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03322826v1\">⟨hal-03322826⟩</a>",
"title_s":["Mechanisms of a rectifying TiN gate contact for AlGaN/GaN HEMTs on silicon substrate"],
"authFullName_s":["Hassane Ouazzani Chahdi","Brahim Benbakhti","Maghnia Mattalah","Jean Claude Gerbedoen","Abdelatif Jaouad","Nour Eddine Bourzgui","Ali Soltani"],
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"citationRef_s":"<i>2019 IEEE SENSORS</i>, Oct 2019, Montreal, Canada. pp.1-4, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/SENSORS43011.2019.8956568\">⟨10.1109/SENSORS43011.2019.8956568⟩</a>",
"citationFull_s":"Hassane Ouazzani Chahdi, Omar Helli, Nour Eddine Bourzgui, Leo Breuil, David Danovitch, et al.. Sensors based on AlGaN/GaN HEMT for fast H<sub>2</sub> and O<sub>2</sub> detection and measurement at high temperature. <i>2019 IEEE SENSORS</i>, Oct 2019, Montreal, Canada. pp.1-4, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/SENSORS43011.2019.8956568\">⟨10.1109/SENSORS43011.2019.8956568⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02451449v1\">⟨hal-02451449⟩</a>",
"title_s":["Sensors based on AlGaN/GaN HEMT for fast H<sub>2</sub> and O<sub>2</sub> detection and measurement at high temperature"],
"authFullName_s":["Hassane Ouazzani Chahdi","Omar Helli","Nour Eddine Bourzgui","Leo Breuil","David Danovitch","Paul B Voss","Suresh Sundaram","Vincent Aubry","Yacine Halfaya","Abdallah Ougazzaden","Jean-Paul Salvestrini","Hassan Maher","Ali Soltani"],
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"citationFull_s":"Steven Duffy, Brahim Benbakhti, Wei Zhang, Karol Kalna, Khaled Ahmeda, et al.. A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs. <i>2018 13th European Microwave Integrated Circuits Conference (EuMIC)</i>, Sep 2018, Madrid, Spain. pp.214-217, <a target=\"_blank\" href=\"https://dx.doi.org/10.23919/EuMIC.2018.8539935\">⟨10.23919/EuMIC.2018.8539935⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02310028v1\">⟨hal-02310028⟩</a>",
"title_s":["A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs"],
"authFullName_s":["Steven Duffy","Brahim Benbakhti","Wei Zhang","Karol Kalna","Khaled Ahmeda","Mohammed Boucherta","Nour Eddine Bourzgui","Maher, Hassan","Ali Soltani"],
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"citationFull_s":"Steven Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei Zhang, et al.. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. <i>IEEE Access</i>, 2018, 6, pp.42721-42728. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ACCESS.2018.2861323\">⟨10.1109/ACCESS.2018.2861323⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02273401v1\">⟨hal-02273401⟩</a>",
"title_s":["Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs"],
"authFullName_s":["Steven Duffy","Brahim Benbakhti","Karol Kalna","Mohammed Boucherta","Wei Zhang","Nour Eddine Bourzgui","Ali Soltani"],
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"citationFull_s":"Steven Duffy, Brahim Benbakhti, Maghnia Mattalah, Wei Zhang, Meriem Bouchilaoun, et al.. Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate. <i>ECS Journal of Solid State Science and Technology</i>, 2017, 6 (11), pp.S3040 - S3043. <a target=\"_blank\" href=\"https://dx.doi.org/10.1149/2.0111711jss\">⟨10.1149/2.0111711jss⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01914382v1\">⟨hal-01914382⟩</a>",
"title_s":["Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate"],
"authFullName_s":["Steven Duffy","Brahim Benbakhti","Maghnia Mattalah","Wei Zhang","Meriem Bouchilaoun","Mohammed Boucherta","Karol Kalna","Nour Eddine Bourzgui","Maher, Hassan","Ali Soltani"],
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"citationRef_s":"<i>Experimental Astronomy</i>, 2015, 30 (1), pp.29-43. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s10686-014-9437-7\">⟨10.1007/s10686-014-9437-7⟩</a>",
"citationFull_s":"A. Benmoussa, B. Giordanengo, S. Gissot, I. E. Dammasch, M. Dominique, et al.. Degradation assessment of LYRA after 5 years on orbit : Technology Demonstration. <i>Experimental Astronomy</i>, 2015, 30 (1), pp.29-43. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s10686-014-9437-7\">⟨10.1007/s10686-014-9437-7⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01102475v1\">⟨hal-01102475⟩</a>",
"title_s":["Degradation assessment of LYRA after 5 years on orbit : Technology Demonstration"],
"authFullName_s":["A. Benmoussa","B. Giordanengo","S. Gissot","I. E. Dammasch","M. Dominique","Jean-François Hochedez","A. Soltani","Nour Eddine Bourzgui","T. Saito","U. Schühle","A. Gottwald","U. Kroth","A. R. Jones"],
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"citationFull_s":"Renaud Dufour, Simon Laurette, Thomas Dargent, Maxime Harnois, Nour Eddine Bourzgui, et al.. Physique des fluides aux échelles microscopiques pour l'ingénierie des microsystèmes : fabrication et caractérisation. <i>Journal sur l'enseignement des sciences et technologies de l'information et des systèmes</i>, 2014, 13, 0002, 7 p. <a target=\"_blank\" href=\"https://dx.doi.org/10.1051/j3ea/2014002\">⟨10.1051/j3ea/2014002⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00996921v1\">⟨hal-00996921⟩</a>",
"title_s":["Physique des fluides aux échelles microscopiques pour l'ingénierie des microsystèmes : fabrication et caractérisation"],
"authFullName_s":["Renaud Dufour","Simon Laurette","Thomas Dargent","Maxime Harnois","Nour Eddine Bourzgui","V. Thomy"],
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"citationRef_s":"<i>Applied Physics Letters</i>, 2014, 104, 233506, 5 p. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/1.4882415\">⟨10.1063/1.4882415⟩</a>",
"citationFull_s":"Ali Soltani, Michel Rousseau, Jean-Claude Gerbedoen, Maghnia Mattalah, P.L. Bonanno, et al.. High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping. <i>Applied Physics Letters</i>, 2014, 104, 233506, 5 p. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/1.4882415\">⟨10.1063/1.4882415⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01009966v1\">⟨hal-01009966⟩</a>",
"title_s":["High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping"],
"authFullName_s":["Ali Soltani","Michel Rousseau","Jean-Claude Gerbedoen","Maghnia Mattalah","P.L. Bonanno","A. Telia","Nour Eddine Bourzgui","Gilles Patriarche","A. Ougazzaden","A. Ben Moussa"],
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"citationRef_s":"<i>Journal of Applied Physics</i>, 2014, 115 (16), pp.163515. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/1.4873236\">⟨10.1063/1.4873236⟩</a>",
"citationFull_s":"Ali Soltani, Arnaud Stolz, Joël Charrier, Maghnia Mattalah, Jean-Claude Gerbedoen, et al.. Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range. <i>Journal of Applied Physics</i>, 2014, 115 (16), pp.163515. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/1.4873236\">⟨10.1063/1.4873236⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00987345v1\">⟨hal-00987345⟩</a>",
"title_s":["Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range"],
"authFullName_s":["Ali Soltani","Arnaud Stolz","Joël Charrier","Maghnia Mattalah","Jean-Claude Gerbedoen","Hassan Ali Barkad","Vincent Mortet","Michel Rousseau","Nour Eddine Bourzgui","Ali Benmoussa","Jean-Claude de Jaeger"],
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"citationFull_s":"Nour Eddine Bourzgui, H. Happy. Implantation d'un modulateur numérique QPSK dans un circuit FPGA. <i>12èmes Journées Pédagogiques CNFM</i>, 2012, Saint Malo, France. <a target=\"_blank\" href=\"https://hal.science/hal-00798844v1\">⟨hal-00798844⟩</a>",
"title_s":["Implantation d'un modulateur numérique QPSK dans un circuit FPGA"],
"authFullName_s":["Nour Eddine Bourzgui","H. Happy"],
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"citationRef_s":"<i>Progress In Electromagnetics Research Letters</i>, 2012, 30, pp.49-58. <a target=\"_blank\" href=\"https://dx.doi.org/10.2528/PIERL11121205\">⟨10.2528/PIERL11121205⟩</a>",
"citationFull_s":"Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet. Terahertz interferometer for integrated Goubau-line waveguides. <i>Progress In Electromagnetics Research Letters</i>, 2012, 30, pp.49-58. <a target=\"_blank\" href=\"https://dx.doi.org/10.2528/PIERL11121205\">⟨10.2528/PIERL11121205⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00788303v1\">⟨hal-00788303⟩</a>",
"title_s":["Terahertz interferometer for integrated Goubau-line waveguides"],
"authFullName_s":["Simon Laurette","A. Treizebre","Nour Eddine Bourzgui","Bertrand Bocquet"],
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"citationFull_s":"S. Laurette, R. Dufour, Thomas Dargent, M. Harnois, Nour Eddine Bourzgui, et al.. Initiation à la microfluidique par la simulation, la réalisation et la caractérisation de microsystèmes. <i>12èmes Journées Pédagogiques CNFM</i>, 2012, Saint Malo, France. pp.1-6. <a target=\"_blank\" href=\"https://hal.science/hal-00806632v1\">⟨hal-00806632⟩</a>",
"title_s":["Initiation à la microfluidique par la simulation, la réalisation et la caractérisation de microsystèmes"],
"authFullName_s":["S. Laurette","R. Dufour","Thomas Dargent","M. Harnois","Nour Eddine Bourzgui","V. Thomy"],
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"citationRef_s":"<i>Journal sur l'enseignement des sciences et technologies de l'information et des systèmes</i>, 2011, 10, pp.0001-1-9. <a target=\"_blank\" href=\"https://dx.doi.org/10.1051/j3ea/2011013\">⟨10.1051/j3ea/2011013⟩</a>",
"citationFull_s":"S. Laurette, R. Dufour, F. Bendriaa, V. Thomy, Nour Eddine Bourzgui. Physique des fluides aux échelles microscopiques pour l'ingénierie des microsystèmes : l'apprentissage par la simulation. <i>Journal sur l'enseignement des sciences et technologies de l'information et des systèmes</i>, 2011, 10, pp.0001-1-9. <a target=\"_blank\" href=\"https://dx.doi.org/10.1051/j3ea/2011013\">⟨10.1051/j3ea/2011013⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00806669v1\">⟨hal-00806669⟩</a>",
"title_s":["Physique des fluides aux échelles microscopiques pour l'ingénierie des microsystèmes : l'apprentissage par la simulation"],
"authFullName_s":["S. Laurette","R. Dufour","F. Bendriaa","V. Thomy","Nour Eddine Bourzgui"],
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"citationRef_s":"<i>13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010</i>, Jan 2010, Paris, France. CD-ROM, Session MEMS Lab-on-chip, 1-4",
"citationFull_s":"Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet. Vers la caractérisation cellulaire par BioMEMS THz. <i>13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010</i>, Jan 2010, Paris, France. CD-ROM, Session MEMS Lab-on-chip, 1-4. <a target=\"_blank\" href=\"https://hal.science/hal-00573235v1\">⟨hal-00573235⟩</a>",
"title_s":["Vers la caractérisation cellulaire par BioMEMS THz"],
"authFullName_s":["Simon Laurette","A. Treizebre","Nour Eddine Bourzgui","Bertrand Bocquet"],
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"citationRef_s":"<i>Journées Nationales Communes du GDR Micro et Nano Fluidique et du Club Micro Capteurs Chimiques</i>, 2010, Villeneuve d'Ascq, France",
"citationFull_s":"Simon Laurette, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet. Towards cell characterization by THz BioMEMS. <i>Journées Nationales Communes du GDR Micro et Nano Fluidique et du Club Micro Capteurs Chimiques</i>, 2010, Villeneuve d'Ascq, France. <a target=\"_blank\" href=\"https://hal.science/hal-00574491v1\">⟨hal-00574491⟩</a>",
"title_s":["Towards cell characterization by THz BioMEMS"],
"authFullName_s":["Simon Laurette","A. Treizebre","Nour Eddine Bourzgui","Bertrand Bocquet"],
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"citationRef_s":"<i>11èmes Journées Pédagogiques du CNFM</i>, 2010, Saint-Malo, France",
"citationFull_s":"A. Soltani, Abdelkrim Talbi, J.C. Tricot, H. Happy, Nour Eddine Bourzgui. Etude, réalisation et caractérisation de résonateurs à ondes élastiques de surface - Application à un capteur de température et de pression. <i>11èmes Journées Pédagogiques du CNFM</i>, 2010, Saint-Malo, France. <a target=\"_blank\" href=\"https://hal.science/hal-00574434v1\">⟨hal-00574434⟩</a>",
"title_s":["Etude, réalisation et caractérisation de résonateurs à ondes élastiques de surface - Application à un capteur de température et de pression"],
"authFullName_s":["A. Soltani","Abdelkrim Talbi","J.C. Tricot","H. Happy","Nour Eddine Bourzgui"],
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"citationRef_s":"<i>8th European Symposium on Biochemical Engineering Science, ESBES-8</i>, 2010, Bologna, Italy",
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