Ludovic Desplanque

maître de conférences-HDR - Electronique, physique, informatique industrielle
CNU : SECTION 63 - ELECTRONIQUE, OPTRONIQUE ET SYSTEMES
    IEMN: 03 20 19 79 88
IEMN LCI Bureau 102
ludovic_desplanque.jpg

Ludovic Desplanque

maître de conférences-HDR - Electronique, physique, informatique industrielle

Publications


Articles dans des revues internationales

2019


     

    • Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates, DESPLANQUE L., BUCAMP A., TROADEC D., PATRIARCHE G., WALLART X., J. Cryst. Growth 512 (2019) 6-10 (available online february 6, 2019 ; published april 15, 2019) doi: 10.1016/j.jcrysgro.2019.02.012


    • Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE, BUCAMP A., COINON C., CODRON J.L., TROADEC D., WALLART X., DESPLANQUE L., J. Cryst. Growth 512 (2019) 11-15 (available online february 1, 2019 ; published april 15, 2019) doi: 10.1016/j.jcrysgro.2019.01.033


    • Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy, PASTOREK M., OLIVIER A., LECHAUX Y., WICHMANN N., KARATSORI T., FAHED M., BUCAMP A., ADDAD A., TROADEC D., GHIBAUDO G., DESPLANQUE L., WALLART X., BOLLAERT S., Nanotechnology 30, 3 (2019) 035301, 8 pages (available online october 26, 2018 ; published january 18, 2019) doi: 10.1088/1361-6528/aaebbd


    • Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors, POST L.C., XU T., FRANCHINA VERGEL N.A., TADJINE A., LAMBERT Y., VAURETTE F., YAREKHA D., DESPLANQUE L., STIEVENARD D., WALLART X., GRANDIDIER B., DELERUE C., VANMAEKELBERGH D., Nanotechnology 30, 15 (2019) 155301, 10 pages (available online february 8, 2019 ; published april 12, 2019) doi: 10.1088/1361-6528/aafd3f

     

    2018


    • In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate, DESPLANQUE L., BUCAMP A., TROADEC D., PATRIARCHE G., WALLART X., Nanotechnology 29, 30 (2018) 305705, 6 pages (available online may 8, 2018 ; published july 27, 2018) doi: 10.1088/1361-6528/aac321
    • On the origins of transport inefficiencies in mesoscopic networks, TOUSSAINT S., MARTINS F., FANIEL S., PALA M.G., DESPLANQUE L., WALLART X., SELLIER H., HUANT S., BAYOT V., HACKENS B., Sci. Rep. 8 (2018) 3017, 11 pages (published february 14, 2018) doi: 10.1038/s41598-018-21250-y
    • Static and low frequency noise characterization of ultra-thin body InAs MOSFETs, KARATSORI T.A., PASTOREK M., THEODOROU C.G., FADJIE A., WICHMANN N., DESPLANQUE L., WALLART X., BOLLAERT S., DIMITRIADIS C.A., GHIBAUDO G., Solid-State Electron. 143 (2018) 56-61 (available online december 6, 2017 ; published may 2018) doi: 10.1016/j.sse.2017.12.001
    • Two-dimensional Rutherford-like scattering in ballistic nanodevices, TOUSSAINT S., BRUN B., FANIEL S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B., Phys. Rev. B 98, 7 (2018) 075310, 7 pages (available online august 24, 2018 ; published august 15, 2018) doi: 10.1103/PhysRevB.98.075310

     

    2017


    • Morphology and valence band offset of GaSb quantum dots grown on GaP (001) and their evolution upon capping, DESPLANQUE L., COINON C., TROADEC D., RUTERANA P., PATRIARCHE G., BONATO L., BIMBERG D., WALLART X., Nanotechnology 28, 22 (2017) 225601, 9 pages (available online may 8, 2017 ; published june 2, 2017) doi: 10.1088/1361-6528/aa6f41
    • V-shaped InAs/Al0.5Ga0.5Sb vertical tunnel FET on GaAs (001) substrate with ION=433 µA.µm-1 at VDS= 0.5V, CHINNI V.K., ZAKNOUNE M., COINON C., MORGENROTH L., TROADEC D., WALLART X., DESPLANQUE L., IEEE J. Electron Devices Soc. 5, 1 (2017) 53-58 (available online november 22, 2016 ; published january 2017), doi: 10.1109/JEDS.2016.2630499
    • Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
      FAHED M., DESPLANQUE L., TROADEC D., PATRIARCHE G., WALLART X.
      19th International Conference on Molecular Beam Epitaxy, MBE 2016, Montpellier, France, september 4-9, 2016
      J. Cryst. Growth 477 (2017) 45-49 (available online december 9, 2016 ; published november 1, 2017)
      doi: 10.1016/j.jcrysgro.2016.12.029

     

    2016


    • Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP, BONATO L., FIRAT ARIKAN I., DESPLANQUE L., COINON C., WALLART X., WANG Y., RUTERANA P., BIMBERG D., Phys. Status Solidi B-Basic Solid State Phys. 253, 10 (2016) 1877-1881 (available online september 6, 2016 ; published october 2016) doi: 10.1002/pssb.201600274
    • Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement, FAHED M., DESPLANQUE L., TROADEC D., PATRIARCHE G., WALLART X., Nanotechnology 27, 50 (2016) 505301, 12 pages (available online november 18, 2016 ; published december 16, 2016), doi: 10.1088/0957-4484/27/50/505301
    • Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
      EL KAZZI S., ALIREZA A., MENDES BORDALLO C.C., SMETS Q., DESPLANQUE L., WALLART X., RICHARD O., DOUHARD B., VERHULST A., COLLAERT N., MERCKLING C., HEYNS M., THEAN A.
      229th Meeting of the Electrochemical Society, 229th ECS Meeting, San Diego, CA, USA, may 29-june 2, 2016, Session G01 - More-than-Moore 3 - Emerging Memory, abstract 1158
      ECS Trans. 72, 3 (2016) 73-80 (published may 19, 2016)
      doi: 10.1149/07203.0073ecst

     

    2015


    • Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105, 093505 (2014)], WESTLUND A., IÑIGUEZ-DE-LA-TORRE I., NILSSON P.Å., GONZALEZ T., MATEOS J., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J., Appl. Phys. Lett. 106, 19 (2015) 199902, 1 page (published may 11, 2015) doi: 10.1063/1.4919884
    • Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy, LIU P., MARTINS F., HACKENS B., DESPLANQUE L., WALLART X., PALA M.G., HUANT S., BAYOT V., SELLIER H., Phys. Rev. B 91, 7 (2015) 075313, 13 pages (available online february 25, 2015 ; published february 15, 2015), doi: 10.1103/PhysRevB.91.075313
    • Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy, FAHED M., DESPLANQUE L., COINON C., TROADEC D., WALLART X.
      Nanotechnology 26 , 29 (2015) 295301, 8 pages (available online july 2, 2015 ; published july 24, 2015), doi: 10.1088/0957-4484/26/29/295301
    • Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures : fabrication and zero-bias detector properties, WESTLUND A., NILSSON P.Å., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J., J. Vac. Sci. Technol. B 33, 2 (2015) 021207, 5 pages (published march 9, 2015) doi: 10.1116/1.4914314
    • Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
      WESTLUND A., SANGARÉ P., DUCOURNAU G., IÑIGUEZ-DE-LA-TORRE I., NILSSON P.Å., GAQUIÈRE C., DESPLANQUE L., WALLART X., MILLITHALER J.F., GONZÁLEZ T., MATEOS J., GRAHN J.
      Solid-State Electron. 104 (2015) 79-85 (available online december 15, 2014 ; published february 2015), doi: 10.1016/j.sse.2014.11.014

     

    2014


    • 100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications , GARDÈS C., BAGUMAKO S., DESPLANQUE L., WICHMANN N., BOLLAERT S., DANNEVILLE F., WALLART X., ROELENS Y., Sci. World J. 2014 (2014) 136340, 6 pages (available online january 6, 2014 ; published february 23, 2014), doi: 10.1155/2014/136340
    • Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation, LEFEBVRE E., MOSCHETTI G., MALMKVIST M., DESPLANQUE L., WALLART X., GRAHN J., Semicond. Sci. Technol. 29, 3 (2014) 035010, 7 pages (available online january 31, 2014 ; published march 2014), doi: 10.1088/0268-1242/29/3/035010
    • Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy, DESPLANQUE L., FAHED M., HAN X., CHINNI V.K., TROADEC D., CHAUVAT M.P., RUTERANA P., WALLART X., Nanotechnology 25, 46 (2014) 465302, 6 pages (available online october 30, 2014 ; published november 21, 2014) doi: 10.1088/0957-4484/25/46/465302
    • On the effect of δ-doping in self-switching diodes, WESTLUND A., INIGUEZ-DE-LA-TORRE I., NILSSON P.A., GONZALEZ T., MATEOS J., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J., Appl. Phys. Lett. 105, 9 (2014) 093505, 5 pages (available online september 4, 2014 ; published september 1, 2014), doi: 10.1063/1.4894806

     

    2013


    • Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface, WANG Y., RUTERANA P., CHEN J., KRET S., EL KAZZI S., GENEVOIS C., DESPLANQUE L., WALLART X., ACS Appl. Mater. Interfaces 5, 19 (2013) 9760-9764 (available online september 11, 2013 ; published october 9, 2013), doi: 10.1021/am4028907
    • Coherent tunnelling across a quantum point contact in the quantum Hall regime, MARTINS F., FANIEL S., ROSENOW B., SELLIER H., HUANT S., PALA M.G., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B., Sci. Rep. 3 (2013) 1416, 5 pages (published march 11, 2013), doi: 10.1038/srep01416
    • DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation, MOSCHETTI G., LEFEBVRE E., FAGERLIND M., NILSSON P.A., DESPLANQUE L., WALLART X., GRAHN J., Solid-State Electron. 87 (2013) 85-89 (available online july 2013 ; published september 2013) doi: 10.1016/j.sse.2013.06.008
    • Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor, SHI M., SAINT-MARTIN J., BOURNEL A., QUERLIOZ D., DOLLFUS P., MO J.J., WICHMANN N., DESPLANQUE L., WALLART X., DANNEVILLE F., BOLLAERT S., J. Nanosci. Nanotechnol. 13, 2 (2013) 771-775 (published february 2013) doi: 10.1166/jnn.2013.6115
    • Scanning gate spectroscopy of transport across a quantum Hall nano-island, MARTINS F., FANIEL S., ROSENOW B., PALA M.G., SELLIER H., HUANT S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B., New J. Phys. 15, 1 (2013) 013049, 10 pages (published january 18, 2013) doi: 10.1088/1367-2630/15/1/013049
    • Terahertz detection in zero-bias InAs self-switching diodes at room temperature, WESTLUND A., SANGARE P., DUCOURNAU G., NILSSON P.A., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J., Appl. Phys. Lett. 103, 13 (2013) 133504, 4 pages (published september 23, 2013) doi: 10.1063/1.4821949
    • The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism, WANG Y., RUTERANA P., KRET S., EL KAZZI S., DESPLANQUE L., WALLART X., Appl. Phys. Lett. 102, 5 (2013) 052102, 5 pages (published february 4, 2013) doi: 10.1063/1.4790296
    • True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications, MOSCHETTI G., ABBASI M., NILSSON P.A., HALLEN A., DESPLANQUE L., WALLART W., GRAHN J., Solid-State Electron. 79 (2013) 268-273 (available online july 21, 2012 ; published january 2013) doi: 10.1016/j.sse.2012.06.013

     

    2012


    • AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs, DESPLANQUE L., EL KAZZI S., CODRON J.L., WANG Y., RUTERANA P., MOSCHETTI G., GRAHN J., WALLART X., Appl. Phys. Lett. 100, 26 (2012) 262103-1-4 (published june 25, 2012) doi: 10.1063/1.4730958
    • Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications, MOSCHETTI G., WADEFALK N., NILSSON P.A., ABBASI M., DESPLANQUE L., WALLART X., GRAHN J. , IEEE Microw. Wirel. Compon. Lett. 22, 3 (2012) 144-146 (available online february 24, 2012 ; published march 2012) doi: 10.1109/LMWC.2011.2182637
    • Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces, WANG Y., RUTERANA P., DESPLANQUE L., EL KAZZI S., WALLART X., EPL-Europhys. Lett. 97, 6 (2012) 68011-1-6 (available online march 22, 2012 ; published march 2012) doi: 10.1209/0295-5075/97/68011
    • Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP , EL KAZZI S., DESPLANQUE L., WALLART X., WANG Y., RUTERANA P., J. Appl. Phys. 111, 12 (2012) 123506-1-5 (published june 19, 2012) doi: 10.1063/1.4729548
    • Mechanism of formation of the misfit dislocations at the cubic materials interfaces, WANG Y., RUTERANA P., KRET S., CHEN J., EL KAZZI S., DESPLANQUE L., WALLART X., Appl. Phys. Lett. 100 , 26 (2012) 262110-1-5 (published june 29, 2012) doi: 10.1063/1.4731787
    • Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer, DESPLANQUE L., EL KAZZI S., COINON C., ZIEGLER S., KUNERT B., BEYER A., VOLZ K., STOLZ W., WANG Y., RUTERANA P., WALLART X., Appl. Phys. Lett. 101, 14 (2012) 142111-1-4 (available online october 5, 2012 ; published october 1, 2012) doi: 10.1063/1.4758292
    • Planar InAs/AlSb HEMTs with ion-implanted isolation, MOSCHETTI G., NILSSON P.A., HALLEN A., DESPLANQUE L., WALLART X., GRAHN J., IEEE Electron Device Lett. 33, 4 (2012) 510-512 (available online march 2, 2012 ; published april 2012) doi: 10.1109/LED.2012.2185480
    • Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy, WANG Y., RUTERANA P., CHEN J., DESPLANQUE L., EL KAZZI S., WALLART X., J. Phys.-Condens. Matter 24, 33 (2012) 335802-1-7 (available online july 27, 2012 ; published august 22, 2012) doi: 10.1088/0953-8984/24/33/335802
    • Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox, PALA M.G., BALTAZAR S., LIU P., SELLIER H., HACKENS B., MARTINS F., BAYOT V., WALLART X., DESPLANQUE L., HUANT S., Phys. Rev. Lett. 108, 7 (2012) 076802-1-5 (published february 13, 2012) doi: 10.1103/PhysRevLett.108.076802

     

    2011


    • [Invited] Scanning-gate microscopy of semiconductor nanostructures : an overview
      MARTINS F., HACKENS B., SELLIER H., LIU P., PALA M.G., BALTAZAR S., DESPLANQUE L., WALLART X., BAYOT V., HUANT S.
      Acta Phys. Pol. A 119, 5 (2011) 569-575 (published may 2011)
      http://przyrbwn.icm.edu.pl/APP/ABSTR/119/a119-5-1.html
    • InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
      MOSCHETTI G., WADEFALK N., NILSSON P.A., ROELENS Y., NOUDEVIWA A., DESPLANQUE L., WALLART X., DANNEVILLE F., DAMBRINE G., BOLLAERT S., GRAHN J.
      Solid-State Electron. 64, 1 (2011) 47-53 (available online july 23, 2011 ; published october 2011)
      doi: 10.1016/j.sse.2011.06.048
    • Investigation of the anisotropic strain relaxation in GaSb islands on GaP
      WANG Y., RUTERANA P., LEI H.P., CHEN J., KRET S., EL KAZZI S., DESPLANQUE L., WALLART X.
      J. Appl. Phys. 110, 4 (2011) 043509-1-8 (published august 18, 2011)
      doi: 10.1063/1.3622321
    • On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
      SELLIER H., HACKENS B., PALA M.G., MARTINS F., BALTAZAR S., WALLART X., DESPLANQUE L., BAYOT V., HUANT S.
      Semicond. Sci. Technol. 26, 06 (2011) 064008-1-10 (available online april 8, 2011 ; published june 2011)
      doi: 10.1088/0268-1242/26/6/064008
    • Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness
      WANG Y., RUTERANA P., DESPLANQUE L., EL KAZZI S., WALLART X.
      J. Appl. Phys. 109, 2 (2011) 023509-1-6 (published january 19, 2011)
      doi: 10.1063/1.3532053
    • Compliance at the GaSb/GaP interface by misfit dislocations array
      EL KAZZI S., DESPLANQUE L., COINON C., WANG Y., RUTERANA P., WALLART X.
      1st Mediterranean Conference on Innovative Materials and Applications, CIMA 2011, Beirut, Lebanon, march 15-17, 2011
      Adv. Mater. Res. 324 (2011) 85-88 (published august 22, 2011)
      doi: 10.4028/www.scientific.net/AMR.324.85

     

    2010


    • Anisotropic transport properties in InAs/AlSb heterostructures
      MOSCHETTI G., ZHAO H., NILSSON P.A., WANG S., KALABUKHOV A., DAMBRINE G., BOLLAERT S., DESPLANQUE L., WALLART X., GRAHN J.
      Appl. Phys. Lett. 97, 24 (2010) 243510-1-3 (published december 17, 2010)
      doi: 10.1063/1.3527971
    • Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure
      DESPLANQUE L., VIGNAUD D., GODEY S., CADIO E., PLISSARD S., WALLART X., LIU P., SELLIER H.
      J. Appl. Phys. 108, 4 (2010) 043704-1-6 (published august 15, 2010)
      doi: 10.1063/1.3475709
    • GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
      EL KAZZI S., DESPLANQUE L., COINON C., WANG Y., RUTERANA P., WALLART X.
      Appl. Phys. Lett. 97, 19 (2010) 192111-1-3 (published november 12, 2010)
      doi: 10.1063/1.3515867
    • Imaging Coulomb islands in a quantum Hall interferometer
      HACKENS B., MARTINS F., FANIEL S., DUTU C.A., SELLIER H., HUANT S., PALA M., DESPLANQUE L., WALLART X., BAYOT V.
      Nat. Commun. 1 (2010) 39-1-6 (published july 27, 2010)
      doi: 10.1038/ncomms1038
    • Improvement of ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors
      MAIRIAUX E., DESPLANQUE L., WALLART X., ZAKNOUNE M.
      J. Vac. Sci. Technol. B 28, 1 (2010) 17-20 (published january 5, 2010)
      doi: 10.1116/1.3268134
    • Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors
      MAIRIAUX E., DESPLANQUE L., WALLART X., ZAKNOUNE M.
      IEEE Electron Device Lett. 31, 4 (2010) 299-301 (available online february 17, 2010 ; published april 2010)
      doi: 10.1109/LED.2010.2040241
    • Sb-HEMT: toward 100-mV cryogenic electronics
      NOUDEVIWA A., ROELENS Y., DANNEVILLE F., OLIVIER A., WICHMANN N., WALDHOFF N., LEPILLIET S., DAMBRINE G., DESPLANQUE L., WALLART X., MOSCHETTI G., GRAHN J., BOLLAERT S.
      IEEE Trans. Electron Devices 57, 8 (2010) 1903-1909 (available online june 17, 2010 ; published august 2010)
      doi: 10.1109/TED.2010.2050109

     

    2009


    • Gate-recess technology for InAs/AlSb HEMTs
      LEFEBVRE E., MALMKVIST M., BORG M., DESPLANQUE L., WALLART X., DAMBRINE G., BOLLAERT S., GRAHN J.
      IEEE Trans. Electron Devices 56, 9 (2009) 1904-1911 (published september 2009)
      doi: 10.1109/TED.2009.2026123

     

    2008


    • Comparative Sb and As segregation at the InP on GaAsSb interface
      WALLART X., GODEY S., DOUVRY Y., DESPLANQUE L.
      Appl. Phys. Lett. 93, 12 (2008) 123119-1-3 (published september 26, 2008)
      doi: 10.1063/1.2991299
    • Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
      BORG M., LEFEBVRE E., MALMKVIST M., DESPLANQUE L., WALLART X., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S., GRAHN J.
      Solid-State Electron. 52, 5 (2008) 775-781 (available online january 14, 2008 ; published may 2008)
      doi: 10.1016/j.sse.2007.12.002
    • Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications
      MALMKVIST M., LEFEBVRE E., BORG M., DESPLANQUE L., WALLART X., DAMBRINE G., BOLLAERT S., GRAHN J.
      IEEE Trans. Microw. Theory Tech. 56, 12 (2008) 2685-2691 (published december 2008)
      doi: 10.1109/TMTT.2008.2006798
    • Electro-absorption sampling at terahertz frequencies in III-V semiconductors
      LAMPIN J.F., DESPLANQUE L., MOLLOT F.
      C. R. Phys. 9, 2 (2008) 153-160 (available online april 18, 2008 ; published march 2008)
      doi: 10.1016/j.crhy.2008.02.001
    • Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)
      DELHAYE G., DESPLANQUE L., WALLART X.
      J. Appl. Phys. 104, 6 (2008) 066105-1-3 (published september 18, 2008)
      doi: 10.1063/1.2978365

     

    2007


    • Integrated terahertz TEM horn antenna
      PEYTAVIT E., LAMPIN J.F., AKALIN T., DESPLANQUE L.
      Electron. Lett. 43, 2 (2007) 73-75
      doi: 10.1049/el:20073679
    • High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
      DESPLANQUE L., VIGNAUD D., WALLART X.
      14th International Conference on Molecular Beam Epitaxy, Tokyo, Japan, september 4-8, 2006
      J. Cryst. Growth 301-302, april (2007) 194-198
      doi: 10.1016/j.jcrysgro.2006.11.229

     

    2005


     

    • Experimental evidence of backward wave on terahertz left-handed transmision lines
      CREPIN T., LAMPIN J.F., DECOOPMAN T., MELIQUE X., DESPLANQUE L., LIPPENS D.
      Appl. Phys. Lett. 87, 10 (2005) 104105-1-3
      doi: 10.1063/1.2041819

    2004


    • Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs
      DESPLANQUE L., LAMPIN J.F., MOLLOT F.
      Appl. Phys. Lett. 84, 12 (2004) 2049-2051
      doi: 10.1063/1.1688977

    2003


    • Shock wave coupling between terahertz transmission lines on GaAs
      DESPLANQUE L., PEYTAVIT E., LAMPIN J.F., LIPPENS D., MOLLOT F.
      Appl. Phys. Lett. 83, 12 (2003) 2483-2485

     

    2002


    • Terahertz electromagnetic generation via optical frequency difference
      PEYTAVIT E., MOURET G., LAMPIN J.F., ARSCOTT S., MASSELIN P., DESPLANQUE L., VANBÉSIEN O., BOCQUET R., MOLLOT F., LIPPENS D.
      IEE Proc.-Optoelectron. 149, 3 (2002) 82-87
    • Terahertz frequency difference from vertically integrated low temperature grown GaAs photodetector
      PEYTAVIT E., ARSCOTT S., LIPPENS D., MOURET G., MATTON S., MASSELIN P., BOCQUET R., LAMPIN J.F., DESPLANQUE L., MOLLOT F.
      Appl. Phys. Lett. 81, 7 (2002) 1174-1176

     

    2001


    • Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect
      LAMPIN J.F., DESPLANQUE L., MOLLOT F.
      Appl. Phys. Lett. 78, 26 (2001) 4103-4105

     


    Communications

    2019


    • Dirac antidot superlattices for electrons in III-V semiconductors
      FRANCHINA VERGEL N.A., TADJINE A., POST L.C., BERTHE M., LAMBERT Y., VAURETTE F., YAREKHA D., DESPLANQUE L., COINON C., WALLART X., STIEVENARD D., DELERUE C., GRANDIDIER B.37th European Materials Research Society Spring Meeting, E-MRS Spring 2019, Nice, France, may 27-31, 2019, Symposium W - Semiconductor nanostructures towards electronic and opto-electronic device applications - VII, paper W4.2
    •  Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route towards Dirac cones in III-V semiconductors

      POST C., XU T., FRANCHINA VERGEL N., LAMBERT Y., VAURETTE F., DESPLANQUE L., WALLART X., STIEVENARD D., GRANDIDIER B., DELERUE C., VANMAEKELBERGH D.

      German Physical Society Annual Conference, Regensburg, Germany, april 1-6, 2019, Session 45, paper HL 45.66 www.dpg-verhandlungen.de/year/2019/conference/regensburg/part/hl/session/45/contribution/66

     

    2018


    • [Invited] Selective area growth of III-V semiconductors using atomic hydrogen during molecular beam epitaxy
      WALLART X., BUCAMP A., FAHED M., TROADEC D., PATRIARCHE G., WANG Y., RUTERANA P., ADDAD A., PASTOREK M., FADJIE A.B., VIGNAUD D., WICHMANN N., BOLLAERT S., DESPLANQUE L.
      7th International Conference on Nanostructures and Nanomaterials Self-Assembly, NanoSEA 2018, Carqueiranne, France, july 2-6, 2018, paper I19-2
    • Magnetic-TEGFET: transistor without gate
      RAYMOND A., CHAUBET C., CHENAUD B., DELGARD A., CAVANNA A., HARMAND J.C., WALLART X., DESPLANQUE L., ZAWADZKI W.
      34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, july 29-august 3, 2018
    • Nano perforation of InGaAs quantum wells: a lithography route towards III-V semiconductors with honeycomb nanogeometry
      POST L.C., XU T., FRANCHINA VERGEL N.A., LAMBERT Y., VAURETTE F., DESPLANQUE L., WALLART X., GRANDIDIER B., DELERUE C., VANMAEKELBERGH D.A.M.
      nanoGe Fall Meeting, NFM18, Torremolinos, Spain, october 22-26, 2018, Symposium S3 - Fundamental Processes in Semiconductor Nanocrystals, paper S3.3-O1
      https://doi.org/10.29363/nanoge.fallmeeting.2018.229 Abstract
    • Tailoring ballistic injection
      TOUSSAINT S., BRUN-BARRIERE B., FANIEL S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
      American Physical Society March Meeting, APS March Meeting 2018, Los Angeles, CA, USA, march 5-9, 2018, Session P15 - Semiconductors: Beyond CMOS Materials & Ballistic Transport, abstract P15.00013
      http://meetings.aps.org/Meeting/MAR18/Session/P15.13 Abstract
    • Transport investigation of two-dimensional materials for topological superconductivity
      VIGNEAU F., MIZOKUCHI R., DESPLANQUE L., ZANUZ D.C., MAURAND R., LEFLOCH F., MYRONOV M., WALLART X., SCAPPUCCI G., DE FRANCESCHI S.
      16èmes Journées de la Matière Condensée, JMC 2018, Grenoble, France, 27-31 août, 2018, 499-499
      https://jmc2018.sciencesconf.org/209303/document
    • Transport mechanism in a p-type InGaAs/InP (001) heterostructure
      FRANCHINA VERGEL N.A., GRANDIDIER B., STIEVENARD D., DELERUE C., WALLART X., DESPLANQUE L., COINON C., BERTHE M.
      21ème Forum des Microscopies à Sonde Locale, La Rochelle, France, 19-23 mars, 2018, 17-17
      http://www.sondeslocales.fr/upload/documents/forum2018/livret2018.pdf
    • 2D Rutherford-like scattering inside a ballistic semiconductor nanodevice
      HACKENS B., TOUSSAINT S., BRUN B., FANIEL S., DESPLANQUE L., WALLART X., BAYOT V.
      34th International Conference on the Physics of Semiconductors, ICPS 2018, Montpellier, France, july 29-august 3, 2018, paper P1_202
    • Electronic properties and transport mechanism in a 2D p-type InGaAs/InP (001) heterostructure
      FRANCHINA VERGEL N.A., TADJINE A., STIEVENARD D., DELERUE C., WALLART X., DESPLANQUE L., COINON C., BERTHE M., GRANDIDIER B.
      International Conference on “Advances in high-precision and low-temperature Scanning Probe Microscopy”, SPSTM-7 & LTSPM-1, Nijmegen, The Netherlands, july 28-30, 2018, poster 24, 58-58
      https://www.ru.nl/publish/pages/887311/abstract_book.pdf

     

    2017


    • [invited] Selective area molecular beam epitaxy for InAs-based FETs
      DESPLANQUE L., FAHED M., PASTOREK M., COINON C., WICHMANN N., BOLLAERT S., WALLART X.
      19th European Workshop on Molecular Beam Epitaxy, EuroMBE19, Korobitsyno, Saint Petersburg, Russia, march 19-22, 2017
    • Fabrication of InAs in-plane nanowires with raised heavily doped contacts using selective area molecular beam epitaxy
      DESPLANQUE L.
      Proceedings of Joint 44th International Symposium on Compound Semiconductors, ISCS 2017, and 29th International Conference on Indium Phosphide and Related Materials, IPRM 2017, Compound Semiconductor Week, CSW 2017, Berlin, Germany, may 14-18, 2017, Session B1 - Nanowires : Growth I, to be published
    • Static and low frequency noise characterization of ultra-thin body InAs MOSFETs
      KARATSORI T.A., PASTOREK M., THEODOROU C.G., FADJIE A., WICHMANN N., DESPLANQUE L., WALLART X., BOLLAERT S., DIMITRIADIS C.A., GHIBAUDO G.
      Proceedings of 3rd Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2017, Athens, Greece, april 3-5, 2017, Session 8 - Non-Si semiconductor materials and devices, 105-108, ISBN 978-1-5090-5314-8 ; e-ISBN 978-1-5090-5313-1
      doi: 10.1109/ULIS.2017.7962613
    • Imaging and tuning electron transport inside nanodevices
      TOUSSAINT S., BRUN-BARRIERE B., CABOSART D., FELTEN A., RECKINGER N., IORDANESCU A., MARTINS F., FANIEL S., PALA M., WALLART X., DESPLANQUE L., SELLIER H., HUANT S., BAYOT V., HACKENS B.
      Forum des Microscopies à Sondes Locales, Juvignac, France, 20-24 mars, 2017, 62-62
      http://sondeslocales.fr/upload/documents/forum2017/livret_forum2017.pdf
    • Imaging thermoelectric power at the nanoscale
      BRUN B., TOUSSAINT S., MARTINS F., FANIEL S., WALLART X., DESPLANQUE L., MAILLY D., GENNSER U., SELLIER H., HUANT S., SANQUER M., BAYOT V., HACKENS B.
      Forum des Microscopies à Sondes Locales, Juvignac, France,, 20-24 mars, 2017, 60-60
      http://sondeslocales.fr/upload/documents/forum2017/livret_forum2017.pdf

     

    2016


    • Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
      FAHED M., DESPLANQUE L., TROADEC D., PATRIARCHE G., WALLART X.
      19th International Conference on Molecular Beam Epitaxy, MBE 2016, Montpellier, France, september 4-9, 2016
      J. Cryst. Growth 477 (2017) 45-49 (available online december 9, 2016 ; published november 1, 2017)
      doi: 10.1016/j.jcrysgro.2016.12.029
      JIF = 1.742
      Position relative du journal dans la catégorie WoS « Physics, Applied » où il est le mieux classé : 51.4% (75/146)
      Citations = 0 : 0 (2017), 0 (2018)Abstract
    • Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior
      EL KAZZI S., ALIREZA A., MENDES BORDALLO C.C., SMETS Q., DESPLANQUE L., WALLART X., RICHARD O., DOUHARD B., VERHULST A., COLLAERT N., MERCKLING C., HEYNS M., THEAN A.
      229th Meeting of the Electrochemical Society, 229th ECS Meeting, San Diego, CA, USA, may 29-june 2, 2016, Session G01 - More-than-Moore 3 - Emerging Memory, abstract 1158
      ECS Trans. 72, 3 (2016) 73-80 (published may 19, 2016)
      doi: 10.1149/07203.0073ecst
    • GaSb quantum dots on (001)GaP for nonvolatile nanoflash memories
      WALLART X., COINON C., TROADEC D., DESPLANQUE L., WANG Y., RUTERANA P., BONATO L., BIMBERG D.
      19th International Conference on Molecular Beam Epitaxy, MBE 2016, Montpellier, France, september 4-9, 2016, paper Th-C6Abstract
    • Puzzling electron behavior analogous to the Braess paradox in a mesoscopic network
      TOUSSAINT S., FANIEL S., MARTINS F., PALA M., DESPLANQUE L., WALLART X., HUANT S., SELLIER H., BAYOT V., HACKENS B.
      American Physical Society March Meeting, APS March Meeting 2016, Baltimore, MD, USA, march 14-18, 2016, Session L24 - Mesoscopic Materials and Devices I, Abstract L24.00013
      http://meetings.aps.org/Meeting/MAR16/Session/L24.13 Abstract
    • Selective area growth of GaSb in-plane nano wires on GaAs(001) by atomic hydrogen assisted molecular beam epitaxy
      FAHED M., DESPLANQUE L., TROADEC D., RUTERANA P., WALLART X.
      Conférence Nationale sur les Processus Ultimes d’Epitaxie des Semiconducteurs, GDR Pulse, Marseille, France, 18-22 juillet, 2016
    • Selective area MBE growth of InGaAs on InP for MOSFET applications
      DESPLANQUE L., PASTOREK M., FADJIE A.B., WICHMANN N., BOLLAERT S., WALLART X.
      19th International Conference on Molecular Beam Epitaxy, MBE 2016, Montpellier, France, september 4-9, 2016, paper Tu-B7Abstract
    • Ultra-thin body InAs MOSFET with selectively raised InAs n+ S/D contacts
      PASTOREK M., WICHMANN N., DESPLANQUE L., RIDAOUI M., FADJIE A., LECHAUX Y., WALLART X., BOLLAERT S.
      40th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2016, Aveiro, Portugal, june 6-10, 2016, Session - Device Processing II, paper 51
    • InAs/Al0.4Ga0.6Sb side gated vertical TFET on GaAs substrate
      CHINNI V., ZAKNOUNE M., WALLART X., DESPLANQUE L.
      28th International Conference on Indium Phosphide and Related Materials, IPRM 2016, Toyama, Japan, june 26-30, 2016, paper MoP-IPRM-016, 1 page
      http://dx.doi.org/10.1109/ICIPRM.2016.7528571 Abstract
    • Selective area growth of GaSb nano-templates on GaAs (001) using atomic hydrogen assisted molecular beam epitaxy
      DESPLANQUE L., FAHED M., TROADEC D., RUTERANA P., WALLART X.
      28th International Conference on Indium Phosphide and Related Materials, IPRM 2016, Toyama, Japan, june 26-30, 2016, paper MoP-IPRM-002, 1 page
      http://dx.doi.org/10.1109/ICIPRM.2016.7528558

     

    2015


     

    2014


    • Selective area epitaxy of InAs/AlGaSb heterostructures on GaSb (001) substrate for tunnel diode applications
      DESPLANQUE L., HAN X., FAHED M., CHINNI V.K., TROADEC D., CHAUVAT M.P., RUTERANA P., WALLART X.
      18th International Conference on Molecular Beam Epitaxy, MBE 2014, Flagstaff, AZ, USA, september 7-12, 2014, paper P129
    • Strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001) with interfacial AlxIn1-xSb layers
      DANOY M., ANGRY P.F., GAVREL J., BRILLARD C., DESPLANQUE L., WANG Y., RUTERANA P., WALLART X.
      18th International Conference on Molecular Beam Epitaxy, MBE 2014, Flagstaff, AZ, USA, september 7-12, 2014, paper P58

     

    2013


    • 200 GHz communication system using unipolar InAs THz rectifiers
      DUCOURNAU G., WESTLUND A., SANGARE P., GAQUIERE C., NISLON P.A., DESPLANQUE L., CODRON J.L., WALLART X., INIGUEZ DE LA TORRE I., MILLITHALER J.F., GONZALES T., MATEOS J., GRAHN J.
      Proceedings of 38th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2013, Mainz, Germany, september 1-6, 2013, paper MO11-3, 2 pages, ISBN 978-1-4673-4717-4
      doi: 10.1109/IRMMW-THz.2013.6665492
    • 120nm AlSb/InAs HEMT without gate recess : 290GHz fT and 335GHz fmax
      GARDES C., BAGUMAKO S.M., DESPLANQUE L., WICHMANN N., DANNEVILLE F., BOLLAERT S., WALLART X., ROELENS Y.
      Proceedings of 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, Kobe, Japan, may 19-23, 2013, paper MoPI-25, 2 pages, ISBN 978-1-4673-6130-9 ; e-ISBN 978-1-4673-6131-6
      doi: 10.1109/ICIPRM.2013.6562604
    • Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes
      WESTLUND A., MOSCHETTI G., NILSSON P.A., GRAHN J., DESPLANQUE L., WALLART X.
      Proceedings of 25th International Conference on Indium Phosphide and Related Materials, IPRM 2013, Kobe, Japan, may 19-23, 2013, paper MoPI-20, 2 pages, ISBN 978-1-4673-6130-9 ; e-ISBN 978-1-4673-6131-6
      doi: 10.1109/ICIPRM.2013.6562599
    • A novel mesoscopic phenomenon : an analog of the Braess paradox in 2DEG networks
      SELLIER H., PALA M., BALTAZAR S., LIU P., HACKENS B., MARTINS F., WALLART X., DESPLANQUE L., BAYOT V., HUANT S.
      16th International Conference on Modulated Semiconductor Structures, MSS-16, Wroclaw, Poland, july 1-5, 2013, paper TuOM9
      http://ep2ds-mss.org/abstrakty/TuOM9.pdf
    • Scanning gate spectroscopy of a quantum Hall island near a quantum point contact
      HACKENS B., MARTINS F., FANIEL S., BAYOT V., ROSENOW B., DESPLANQUE L., WALLART X., PALA M., SELLIER H., HUANT S.
      American Physical Society March Meeting, APS March Meeting 2013, Baltimore, MD, USA, march 18-22, 2013, Abstract N20.00001
      http://meetings.aps.org/Meeting/MAR13/Event/186664
    • Transition from Coulomb diamonds to checkerboard-like spectroscopies in a mesoscopic quantum Hall interferometer
      FANIEL S., MARTINS F., BAYOT V., HACKENS B., DESPLANQUE L., WALLART X., ROSENOW B., MELINTE S.
      American Physical Society March Meeting, APS March Meeting 2013, Baltimore, MD, USA, march 18-22, 2013, Abstract N20.00010
      http://meetings.aps.org/Meeting/MAR13/Event/186673

     

    2012


    • Cryogenic operation of InAs/AlSb HEMT hybrid LNAs
      MOSCHETTI G., WADEFALK N., NILSSON P.A., ABBASI M., DESPLANQUE L., WALLART X., GRAHN J.
      Proceedings of 7th European Microwave Integrated Circuits Conference, EuMIC 2012, Amsterdam, The Netherlands, october 29-october 30, 2012, 373-376, ISBN 978-1-4673-2302-4
      http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6483814
    • Locating an individual quantum hall island inside a quantum ring
      MARTINS F., FANIEL S., PALA M.G., SELLIER H., HUANT S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
      31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, july 29-august 3, 2012
      AIP Conf. Proc. 1566 (2012) 299-300, ISBN 978-0-7354-1194-4
      doi: 10.1063/1.4848404
    • Planning the electron traffic in semiconductor networks : a mesoscopic analog of the Braess paradox encountered in road networks
      HUANT S., BALTAZAR S., LIU P., SELLIER H., HACKENS B., MARTINS F., BAYOT V., WALLART X., DESPLANQUE L., PALA M.G.
      31st International Conference on the Physics of Semiconductors, ICPS 2012, Zurich, Switzerland, july 29-august 3, 2012
      AIP Conf. Proc. 1566 (2012) 229-230, ISBN 978-0-7354-1194-4
      doi: 10.1063/1.4848369
    • Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz
      MO J.J., WICHMANN N., ROELENS Y., ZAKNOUNE M., DESPLANQUE L., WALLART X., BOLLAERT S.
      Proceedings of 24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, Santa Barbara, CA, USA, august 27-30, 2012, 44-47, ISBN 978-1-4673-1725-2
      doi: 10.1109/ICIPRM.2012.6403314
    • Source-drain scaling of ion-implanted InAs/AlSb HEMTs
      MOSCHETTI G., NILSSON P., HALLEN A., DESPLANQUE L., WALLART X., GRAHN J.
      Proceedings of 24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, Santa Barbara, CA, USA, august 27-30, 2012, 57-60, ISBN 978-1-4673-1725-2
      doi: 10.1109/ICIPRM.2012.6403318
    • High electron mobility InAs-based heterostructure on exact (001) Si using GaSb/GaP accommodation layer
      DESPLANQUE L., EL KAZZI S., COINON C., ZIEGLER S., KUNERT B., BEYER A., VOLZ K., STOLZ W., WANG Y., RUTERANA P., WALLART X.
      24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, Santa Barbara, CA, USA, august 27-30, 2012
    • Influence of Sb overpressure on the anisotropic transport properties of InAs/AlSb heterostructures grown on highly mismatched substrates
      EL KAZZI S., DESPLANQUE L., WANG Y., RUTERANA P., WALLART X.
      Materials Research Society Spring Meeting, MRS Spring 2012, Symposium G : Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II, San Francisco, CA, USA, april 9-13, 2012, paper G2.4

     

    2011


    • 50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz
      MO J.J., WICHMANN N., ROELENS Y., ZAKNOUNE M., DESPLANQUE L., WALLART X., BOLLAERT S.
      Proceedings of 20th European Workshop on Heterostructure Technology, HeTech 2011, Villeneuve d'Ascq, France, november 7-9, 2011, 1-2
    • Anisotropic transport of InAs/AlSb heterostructures grown on InP substrates
      MOSCHETTI G., ZHAO H., NILSSON P.A., WANG S., KALABUKHOV A., DAMBRINE G., BOLLAERT S., DESPLANQUE L., WALLART X., GRAHN J.
      Proceedings of 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011, Catania, Italy, may 29-june 1, 2011, 17-18, ISBN 978-88-8080-123-8
    • Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation
      SHI M., SAINT-MARTIN J., BOURNEL A., QUERLIOZ D., DOLLFUS P., MO J.J., WICHMANN N., DESPLANQUE L., WALLART X., DANNEVILLE F., BOLLAERT S.
      Proceedings of 37th IEEE International SOI Conference, SOI 2011, Tempe, AZ, USA, october 3-6, 2011, 1-2, ISBN 978-1-61284-761-0
      doi: 10.1109/SOI.2011.6081701
    • Compliance at the GaSb/GaP interface by misfit dislocations array
      EL KAZZI S., DESPLANQUE L., COINON C., WANG Y., RUTERANA P., WALLART X.
      1st Mediterranean Conference on Innovative Materials and Applications, CIMA 2011, Beirut, Lebanon, march 15-17, 2011
      Adv. Mater. Res. 324 (2011) 85-88 (published august 22, 2011)
      doi: 10.4028/www.scientific.net/AMR.324.85
    • Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures
      EL KAZZI S., DESPLANQUE L., WALLART X., WANG Y., RUTERANA P.
      Proceedings of 20th European Workshop on Heterostructure Technology, HeTech 2011, Villeneuve d'Ascq, France, november 7-9, 2011, 1-2https://publis.iemn.fr/dl.php?file=HeTech2011-40-ElKazzi.pdf
    • Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment
      WANG Y., RUTERANA P., DESPLANQUE L., EL KAZZI S., WALLART X.
      Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, San Francisco, CA, USA, april 25-29, 2011
      Mater. Res. Soc. Symp. Proc. 1324 (2011) 143-148, ISBN 978-1-6051-1301-2
      doi: 10.1557/opl.2011.841
    • 100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation
      MO J.J., WICHMANN N., ROELENS Y., ZAKNOUNE M., DESPLANQUE L., WALLART X., BOLLAERT S.
      Proceedings of 23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, Berlin, Germany, may 22-26, 2011, 1-4, ISBN 978-1-4577-1753-6
      http://ieeexplore.ieee.org/search/searchresult.jsp?arnumber=5978296
    • Imaging quantum Hall Coulomb islands inside a quantum ring
      MARTINS F., HACKENS B., FANIEL S., BAYOT V., PALA M., SELLIER H., HUANT S., DESPLANQUE L., WALLART X.
      American Physical Society March Meeting, APS March Meeting 2011, Dallas, TX, USA, march 21-25, 2011
      http://meeting.aps.org/Meeting/MAR11/Event/143493
    • Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring
      HACKENS B., MARTINS F., FANIEL S., BAYOT V., PALA M., SELLIER H., HUANT S., DESPLANQUE L., WALLART X.
      American Physical Society March Meeting, APS March Meeting 2011, Dallas, TX, USA, march 21-25, 2011
      http://meeting.aps.org/Meeting/MAR11/Event/140532
    • Strain relaxation at the GaSb/GaAs and GaSb/GaP interfaces
      DESPLANQUE L., EL KAZZI S., COINON C., WANG Y., RUTERANA P., WALLART X.
      23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, Berlin, Germany, may 22-26, 2011
    • TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy
      WANG Y., CHAUVAT M.P., RUTERANA P., DESPLANQUE L., WALLART X.
      Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, San Francisco, CA, USA, april 25-29, 2011
    • TEM and molecular dynamics simulation investigation of the anisotropic strain relaxation in GaSb islands on GaP
      WANG Y., LEI H.P., RUTERANA P., CHEN J., EL KAZZI S., DESPLANQUE L., WALLART X.
      European Materials Research Society Spring Meeting, E-MRS Spring 2011, Symposium G : Semiconductor nanostructures towards electronic and optoelectronic device applications, Nice, France, may 9-13, 2011

     

    2010


    • [invited] MBE growth of antimony-based heterostructures for microelectronic applications
      WALLART X., DESPLANQUE L., VIGNAUD D., PLISSARD S., DELHAYE G., YAREKHA D., BOLLAERT S., ROELENS Y., NOUDEVIWA A., DANNEVILLE F., OLIVIER A., WICHMANN N., ZAKNOUNE M., MAIRIAUX E., DAMBRINE G., GRAHN J., MOSCHETTI G., NILSSON P.A., MALMKVIST M., LEFEBVRE E.
      10th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, EXMATEC 2010, Darmstadt/Seeheim, Germany, may 19-21, 2010
    • [invited] Scanning-gate microscopy of semiconductor nanostructures : an overview
      MARTINS F., HACKENS B., SELLIER H., LIU P., PALA M.G., BALTAZAR S., DESPLANQUE L., WALLART X., BAYOT V., HUANT S.
      XXXIX 'Jaszowiec' International School and Conference on the Physics of Semiconductors, Krynica-Zdrój, Poland, june 19-24, 2010
    • 100mV noise performances of Te-doped Sb-HEMT
      NOUDEVIWA A., OLIVIER A., ROELENS Y., DANNEVILLE F., WICHMANN N., WALDHOFF N., DESPLANQUE L., WALLART X., BOLLAERT S.
      Proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, Smolenice, Slovakia, october 25-27, 2010, 25-28, ISBN 978-1-4244-8574-1
      doi: 10.1109/ASDAM.2010.5667012
    • Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
      OLIVIER O., WICHMANN N., MO J.J., NOUDEVIWA A., ROELENS Y., DESPLANQUE L., WALLART X., DANNEVILLE F., DAMBRINE G., MARTIN F., DESPLATS O., WANG Y., CHAUVAT M.P., RUTERANA P., MAHER H., SAINT-MARTIN J., SHI M., BOLLAERT S.
      Proceedings of the 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, Kagawa, Japan, may 31-june 4, 2010, 41-43, ISBN 978-1-4244-5919-3
      doi: 10.1109/ICIPRM.2010.5515926
    • High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply
      OLIVIER A., NOUDEVIWA A., WICHMANN N., ROELENS Y., DESPLANQUE L., DANNEVILLE F., DAMBRINE G., WALLART X., BOLLAERT S.
      Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, Paris, France, september 27-28, 2010, 162-165, ISBN 978-1-4244-7231-4, GAAS Ass. Student Fellowship
      http://ieeexplore.ieee.org/search/searchresult.jsp?arnumber=5613713
    • DC and RF cryogenic behaviour of InAs/AlSb HEMTs
      MOSCHETTI G., NILSSON P.A., DESPLANQUE L., WALLART X., RODILLA H., MATEOS J., GRAHN J.
      Proceedings of the 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, Kagawa, Japan, may 31-june 4, 2010, 321-324, ISBN 978-1-4244-5919-3
      doi: 10.1109/ICIPRM.2010.5516313
    • Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation
      NOUDEVIWA A., ROELENS Y., DANNEVILLE F., OLIVIER A., WICHMANN N., WALDHOFF N., LEPILLIET S., DAMBRINE G., DESPLANQUE L., WALLART X., BELLAICHE J., SMITH D., MAHER H., BOLLAERT S.
      Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, Paris, France, september 27-28, 2010, 286-289, ISBN 978-1-4244-7231-4
      http://ieeexplore.ieee.org/search/searchresult.jsp?arnumber=5613662
    • Tellurium δ-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics
      ROELENS Y., OLIVIER A., DESPLANQUE L., NOUDEVIWA A., DANNEVILLE F., WICHMANN N., WALLART X., BOLLAERT S.
      Proceedings of the 68th Device Research Conference, DRC 2010, Notre Dame, IN, USA, june 21-23, 2010, 53-54, ISBN 978-1-4244-6562-0
      doi: 10.1109/DRC.2010.5551945
    • Electronic properties of the Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure
      DESPLANQUE L., VIGNAUD D., GODEY S., CADIO E., LIU P., SELLIER H., WALLART X.
      22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, Kagawa, Japan, may 31-june 4, 2010
    • Optoelectronic THz signal generation and use in component characterisation
      LAMPIN J.F., BECK A., OFFRANC O., PEYTAVIT E., DUCOURNAU G., AKALIN T., ZAKNOUNE M., DESPLANQUE L., WALLART X.
      European Microwave Week Workshops and Short Courses, THz Technologies and Applications, Paris, France, september 26, 2010
    • Strain relaxation by misfit dislocation array at the GaSb/GaP interface
      EL KAZZI S., DESPLANQUE L., COINON C., WALLART X., WANG Y., RUTERANA P.
      16th International Conference on Molecular Beam Epitaxy, MBE 2010, Berlin, Germany, august 22-27, 2010
    • Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructures for high speed and low power consumption electronic devices
      DESPLANQUE L., VIGNAUD D., GODEY S., PLISSARD S., CADIO E., WALLART X., LIU P., SELLIER H.
      16th International Conference on Molecular Beam Epitaxy, MBE 2010, Berlin, Germany, august 22-27, 2010

     

    2009


    • Narrow band gap III-V based-FET for ultra low power high frequency analog applications
      DAMBRINE G., BOLLAERT S., ROELENS Y., NOUDEVIWA A., DANNEVILLE F., OLIVIER A., WICHMANN N., DESPLANQUE L., WALLART X., GRAHN J., MOSCHETTI G., NILSSON P.A., MALMKVIST M., LEFEBVRE E.
      Proceedings of the 67th Device Research Conference, State College, PA, USA, june 22-24, 2009, 149-151, ISBN 978-1-4244-3528-9
      doi: 10.1109/DRC.2009.5354961
    • DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
      MOSCHETTI G., NILSSON P.A., WADEFALK N., MALMKVIST M., LEFEBVRE E., GRAHN J., ROELENS Y., NOUDEVIWA A., OLIVIER A., BOLLAERT S., DANNEVILLE F., DESPLANQUE L., WALLART X., DAMBRINE G.
      Proceedings of the 21st IEEE Conference on Indium Phosphide and Related Materials, IPRM'09, Newport Beach, CA, USA, may 10-14, 2009, 323-325, ISBN 978-1-4244-3432-9
      doi: 10.1109/ICIPRM.2009.5012506
    • Metamorphic Te-doped AlInSb/GaInSb heterostructures
      DESPLANQUE L., DELHAYE G., ANDROUSSI Y., WALLART X.
      15th European Molecular Beam Epitaxy Workshop, Euro-MBE 2009, Zakopane, Poland, march 8-11, 2009
    • X-ray photoemission study of segregation phenomena at AlSb/InAs interfaces
      WALLART X., DESPLANQUE L., GODEY S.
      15th European Molecular Beam Epitaxy Workshop, Euro-MBE 2009, Zakopane, Poland, march 8-11, 2009

     

    2008


    • Preliminary investigations on the Te-doped AlInSb/GaInSb heterostructures for High Electron Mobility Transistor (HEMT) applications
      DELHAYE L., DESPLANQUE L., WALLART X.
      Proceedings of the IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, Versailles, France, may 25-29, 2008, 1-3, ISBN 978-1-4244-2258-6
      doi: 10.1109/ICIPRM.2008.4702932
    • Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication
      MAIRIAUX E., DESPLANQUE L., WALLART X., DAMBRINE G., ZAKNOUNE M.
      Proceedings of the IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, Versailles, France, may 25-29, 2008, 1-3, ISBN 978-1-4244-2258-6
      doi: 10.1109/ICIPRM.2008.4702971
    • AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation
      OLIVIER A., GEHIN T., DESPLANQUE L., WALLART X., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S., LEFEBVRE E., MALMKVIST M., GRAHN J.
      Proceedings of the IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, Versailles, France, may 25-29, 2008, 1-3, ISBN 978-1-4244-2258-6
      doi: 10.1109/ICIPRM.2008.4702979
    • High electron mobility Te-doped AlInSb/GaInSb heterostructures
      DESPLANQUE L., DELHAYE G., WALLART X.
      17th European Heterostructure Technology Workshop, HeTech'08, Venice, Italy, november 3-5, 2008

     

    2007


    • [invited] Left handed metamaterials at terahertz frequencies
      CROËNNE C., GAILLOT D.P., DESPLANQUE L., LHEURETTE E., LAMPIN J.F., LIPPENS D.
      Proceedings of the Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, IRMMW-THz 2007, Cardiff, Wales, United Kingdom, september 2-7, 2007, 866-868, ISBN 978-1-4244-1438-3
      http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=4516768
    • (Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs
      LEFEBVRE E., BORG M., MALMKVIST M., GRAHN J., DESPLANQUE L., WALLART X., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S.
      Proceedings of the 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, Matsue, Japan, may 14-18, 2007, 125-128
      doi: 10.1109/ICIPRM.2007.381139
    • Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime
      BOLLAERT S., DESPLANQUE L., WALLART X., ROELENS Y., MALMKVIST M., BORG M., LEFEBVRE E., GRAHN J., SMITH D., DAMBRINE G.
      Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Munich, Germany, october 8-10, 2007, 20-23, ISBN 978-2-87487-002-6
      doi: 10.1109/EMICC.2007.4412637
    • Characterization of insulated gate-gate versus Schottky-gate InAs/AlSb HEMTs
      MALMKVIST M., LEFEBVRE E., BORG M., DESPLANQUE L., WALLART X., DAMBRINE G., BOLLAERT S., GRAHN J.
      Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Munich, Germany, october 8-10, 2007, 24-27, ISBN 978-2-87487-002-6
      doi: 10.1109/EMICC.2007.4412638
    • DC and RF performance of 0.2-2.4 µm gate length InAs/AlSb HEMTs
      BORG M., LEFEBVRE E., MALMKVIST M., DESPLANQUE L., WALLART X., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S., GRAHN J.
      Proceedings of the 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, Matsue, Japan, may 14-18, 2007, 67-70
      doi: 10.1109/ICIPRM.2007.381124
    • Development of InAs/AlSb HEMT technology for high-frequency operation
      GRAHN J., LEFEBVRE E., BORG M., MALMKVIST M., DESPLANQUE L., WALLART X., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S.
      Proceedings of the 31th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2007, Venice, Italy, may 20-23, 2007
    • Picosecond pulse generation and photomixing with uni-travelling-carrier photodiode
      BECK A., LAMPIN J.F., ZAKNOUNE M., PEYTAVIT E., AKALIN T., DESPLANQUE L., MOLLOT F.
      Proceedings of the Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, IRMMW-THz 2007, Cardiff, Wales, United Kingdom, september 2-7, 2007, 200-201
    • TEM-horn antennas for generation and detection of terahertz pulses
      LAMPIN J.F., PEYTAVIT E., AKALIN T., DESPLANQUE L., MOURET G., HINDLE F., BIGOURD D.
      Proceedings of the Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, IRMMW-THz 2007, Cardiff, Wales, United Kingdom, september 2-7, 2007, 799-800
    • [Invited] Optoelectronic THz signal generation and use in component characterization
      LAMPIN J.F., DESPLANQUE L., AKALIN T., PEYTAVIT E., BECK A., OFFRANC O., MOLLOT F.
      European Microwave Week, Workshop 'From THz devices to systems : Design, Modeling, Processes and Characterization', Munich, Germany, october 8-12, 2007

     

    2006


    •  High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
      DESPLANQUE L., VIGNAUD D., WALLART X.
      14th International Conference on Molecular Beam Epitaxy, Tokyo, Japan, september 4-8, 2006
      J. Cryst. Growth 301-302, april (2007) 194-198
      doi: 10.1016/j.jcrysgro.2006.11.229
    • Propagation of terahertz pulses along planar Goubau lines
      AKALIN T., LAMPIN J.F., DESPLANQUE L., PEYTAVIT E., TREIZEBRE A.
      Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, Shanghai, China, september 18-22, 2006, 568, ISBN: 978-1-4244-0399-8
      doi: 10.1109/ICIMW.2006.368776
    • Sub-picosecond time-domain measurement of heterojunction bipolar transistors and photodiodes
      BECK A., LAMPIN J.F., ZAKNOUNE M., DESPLANQUE L., MOLLOT F.
      Proceedings of the Joint 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, IRMMW-THz2006, Shanghai, China, september 18-22, 2006, 510, ISBN: 978-1-4244-0399-8
      doi: 10.1109/ICIMW.2006.368718

     

    2005


    • Left handed CPS transmission lines at terahertz frequency
      CREPIN T., LAMPIN J.F., FOULON M.F., DESPLANQUE L., MELIQUE X., LIPPENS D.
      Proceedings of the 35th European Microwave Conference, EuMC 2005, Paris, France, october 4-6, 2005, 705-708, ISBN: 2-9600551-2-8
      doi: 10.1109/EUMC.2005.1610023

     

    2004


    • Analysis of right- and left-handed dispersive transmission lines at terahertz frequencies
      LAMPIN J.F., CREPIN T., PERRIN M., TERNISIEN M., DESPLANQUE L., MOLLOT F., LIPPENS D.
      Proceedings of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karlsruhe, Germany, september 27-october 1, 2004, 101-102
      doi: 10.1109/ICIMW.2004.1421973
    • Technological development of THz microfluidic microsystems for biological spectroscopy
      MILLE V., BOURZGUI N.E., MEJDJOUB F., DESPLANQUE L., LAMPIN J.F., SUPIOT P., BOCQUET B.
      Proceedings of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karlsruhe, Germany, september 27-october 1, 2004, 549-550
      doi: 10.1109/ICIMW.2004.1422207
    • THz study of liquids using an integrated bragg filter
      LAMPIN J.F., DESPLANQUE L., TERNISIEN M., CREPIN T., WALLOTH C., LIPPENS D., MOLLOT F.
      Proceedings of the 2004 Joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics, Karlsruhe, Germany, september 27-october 1, 2004, 469-470
      doi: 10.1109/ICIMW.2004.1422167

     

    2003


    • Ultra-fast sampling of THz pulses using post-process bonding of low temperature grown epitaxial layers
      DESPLANQUE L., LAMPIN J.F., MOLLOT F.
      Proceedings of the 11th IEEE International Conference on Terahertz Electronics, THz 2003, Sendaï, Japan, september 24-26, 2003, 32

     

    2002


     

    • An ultra-wide bandwidth photomixer with down conversion at terahertz frequency
      PEYTAVIT E., ARSCOTT S., LIPPENS D., MOURET G., MASSELIN P., MATTON S., BOCQUET R., LAMPIN J.F., DESPLANQUE L., MOLLOT F.
      Proceedings of the 10th IEEE International Conference on Terahertz Electronics, THz 2002, Cambridge, UK, september 9-10, 2002, 23-26

     


    Communications nationales

    2018


    • [Invité] Préparation des substrats pour la croissance sélective de nanostructures III-V
      DESPLANQUE L., BUCAMP A., FAHED M., TROADEC D., PASTOREK M., FADJIE A.B., WICHMANN N., BOLLAERT S., PATRIARCHE G., WALLART X.
      Atelier du GDR PULSE « préparation des substrats pour l'épitaxie », Villeneuve d'Ascq, France, 22-24 mai, 2018
    • Transport investigation of two-dimensional materials for topological superconductivity
      VIGNEAU F., MIZOKUCHI R., DESPLANQUE L., ZANUZ D.C., MAURAND R., LEFLOCH F., MYRONOV M., WALLART X., SCAPPUCCI G., DE FRANCESCHI S.
      16èmes Journées de la Matière Condensée, JMC 2018, Grenoble, France, 27-31 août, 2018, 499-499
      https://jmc2018.sciencesconf.org/209303/document
    • Transport mechanism in a p-type InGaAs/InP (001) heterostructure
      FRANCHINA VERGEL N.A., GRANDIDIER B., STIEVENARD D., DELERUE C., WALLART X., DESPLANQUE L., COINON C., BERTHE M.
      21ème Forum des Microscopies à Sonde Locale, La Rochelle, France, 19-23 mars, 2018, 17-17
      http://www.sondeslocales.fr/upload/documents/forum2018/livret2018.pdf
    • Caractérisation électrique de nanostructures planaires d’InGaAs réalisées par croissance sélective EJM sur substrat InP
      BUCAMP A., WALLART X., VIGNAUD D., COINON C., TROADEC D., DESPLANQUE L.
      Atelier du GDR PULSE « préparation des substrats pour l'épitaxie », Villeneuve d'Ascq, France, 22-24 mai, 2018
    • Effet d’un flux d’hydrogène atomique durant la croissance de semi-conducteurs III-V
      BUCAMP A., COINON C., DESPLANQUE L., WALLART X.
      16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018, Agay, France, 13-15 juin, 2018


    2017


    • MOSFET III-V : du transistor planaire à couche mince aux nanofils à grille enrobante
      PASTOREK M., WICHMANN N., RIDAOUI M., OLIVIER A., DESPLANQUES L., WALLART X., BOLLAERT S.
      Actes des 20èmes Journées Nationales Microondes, JNM 2017, Saint Malo, France, 16-19 mai, 2017, session TEM-P2 - Caractérisation de matériaux et dispositifs, 4 pagesRésumé
    • Paradoxical electron transport in mesoscopic networks
      TOUSSAINT S., BRUN-BARRIERE B., MARTINS F., FANIEL S., PALA M., WALLART X., DESPLANQUE L., SELLIER H., HUANT S., BAYOT V., HACKENS B.
      Proceedings of General Scientific Meeting of the Belgian Physical Society, BPS Meeting 2017, Mons, Belgium, may 17, 2017, paper CMNP-4, 2 pages
      http://hosting.umons.ac.be/php/sbp/wp-content/uploads/2016/11/Abstract_Book_BPS2017_2.pdf
    • Imaging and tuning electron transport inside nanodevices
      TOUSSAINT S., BRUN-BARRIERE B., CABOSART D., FELTEN A., RECKINGER N., IORDANESCU A., MARTINS F., FANIEL S., PALA M., WALLART X., DESPLANQUE L., SELLIER H., HUANT S., BAYOT V., HACKENS B.
      Forum des Microscopies à Sondes Locales, Juvignac, France, 20-24 mars, 2017, 62-62
      http://sondeslocales.fr/upload/documents/forum2017/livret_forum2017.pdf
    • Imaging thermoelectric power at the nanoscale
      BRUN B., TOUSSAINT S., MARTINS F., FANIEL S., WALLART X., DESPLANQUE L., MAILLY D., GENNSER U., SELLIER H., HUANT S., SANQUER M., BAYOT V., HACKENS B.
      Forum des Microscopies à Sondes Locales, Juvignac, France,, 20-24 mars, 2017, 60-60
      http://sondeslocales.fr/upload/documents/forum2017/livret_forum2017.pdf
    • Ultra thin body InAs MOSFET with raised S/D contacts for future high performance CMOS devices
      PASTOREK M., WICHMANN N., DESPLANQUE L., RIDAOUI M., FADJIE A., LECHAUX Y., WALLART X., BOLLAERT S.
      Actes des 19èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2016, Toulouse, France, 11-13 mai, 2016, papier 5.2.11, 4 pages
      http://www.cnfm.fr/VersionFrancaise/animations/JNRDM/JNRDM2016_Papiers/Le11Mai2016/11.Aprem_posters/5.2.11-JNRDM16_Matej-PASTOREK.pdf
    • Selective area growth of GaSb in-plane nano wires on GaAs(001) by atomic hydrogen assisted molecular beam epitaxy
      FAHED M., DESPLANQUE L., TROADEC D., RUTERANA P., WALLART X.
      Conférence Nationale sur les Processus Ultimes d’Epitaxie des Semiconducteurs, GDR Pulse, Marseille, France, 18-22 juillet, 2016
    • Analyse par diffraction de rayons X de couches de GaSb épitaxiées par jets moléculaires sur substrats de GaAs nanostructurés
      FAHED M., DESPLANQUE L., WALLART X.
      15èmes Journées Nano, Micro et Optoélectronique, JNMO 2016, Les Issambres, France, 30 mai-1 juin, 2016
    • Fabrication and characterization of InAs/Al0.5Ga0.5Sb vertical tunnel FET on GaAs substrate
      CHINNI V.K., ZAKNOUNE M., COINON C., WALLART X., DESPLANQUE L.
      15èmes Journées Nano, Micro et Optoélectronique, JNMO 2016, Les Issambres, France, 30 mai-1 juin, 2016
    • Utra thin body InAs MOSFET with selectively raised InAs S/D as a promising platform for future integration of high RF performance and low power CMOS applications
      PASTOREK M., WICHMANN N., FADJIE A., DESPLANQUE L., RIDAOUI M., WALLART X., BOLLAERT S.
      15èmes Journées Nano, Micro et Optoélectronique, JNMO 2016, Les Issambres, France, 30 mai-1 juin, 2016

    2014


    • Croissance localisée d’InAs par épitaxie par jets moléculaires
      FAHED M., DESPLANQUE L., WALLART X.
      Actes des 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, Villeneuve d'Ascq, France, 26-28 mai, 2014, 3 pages
    • InAs based Esaki tunnel diodes
      CHINNI V.K., DESPLANQUE L., ZAKNOUNE M., WALLART X.
      Actes des 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, Villeneuve d'Ascq, France, 26-28 mai, 2014, 3 pages
    • Relaxation de contrainte et morphologie de surface de fines couches de GaSb épitaxiées par MBE sur substrat GaAs (001) avec couche interfaciale d’AlInSb
      DANOY M., ANGRY P.F., GAVRELL J., BRILLARD C., DESPLANQUE L., WANG Y., RUTERANA P., WALLART X.
      Réunion Plénière Commune du GDR PULSE et du GDR 2974 Nanofils, Toulouse, France, 27-31 octobre, 2014
      http://gdr-nf-pulse.sciencesconf.org/conference/gdr-nf-pulse/pages/Book_Complet_v09_1.pdf#page=27
    • MILLIPRISM : millimeter wave passive radiometric imaging system
      LAMPIN J.F., ZAKNOUNE M., WALLART X., DESPLANQUE L., PEYTAVIT E., DUCOURNAU G., THIRAULT M., WERQUIN M., JONNIAU S., THOUVENIN N., GAQUIERE C., VELLAS N.
      8ème Workshop Interdisciplinaire sur la Sécurité Globale, WISG 2014, Troyes, France, 30-31 janvier, 2014

    2013


    • Coherence and Coulomb blockade in ultra-small quantum Hall islands
      MARTINS F., FANIEL S., SELLIER H., HUANT S., PALA M.G., DESPLANQUE L., WALLART X., ROSENOW B., BAYOT V., HACKENS B.
      Actes du 16ème Forum des Microscopies à Sondes Locales, Spa, Belgique, 25-29 mars, 2013, papier OC23, 41-42
      http://www.sondeslocales.fr/upload/documents/forum2013/Forum2013_Spa_Actes.pdf
    • HEMTs 100nm AlSb/InAs pour applications faible bruit, faible consommation
      BAGUMAKO S., GARDES C., DESPLANQUE L., WICHMANN N., DANNEVILLE F., BOLLAERT S., WALLART X., ROELENS Y.
      Actes des 18èmes Journées Nationales Microondes, JNM 2013, Paris, France, 14-17 mai, 2013, papier J2-DA1-3, 4 pages
    • Low-IQ : MMIC ultra faible consommation cryogénique et ambiant pour télécommunications spatiales en bande Q
      BOLLAERT S., DANNEVILLE F., ROELENS Y., DESPLANQUE L., GARDES C., BAGUMAKO S., CHAMBON C., FAUROUX B., FRAYSSE J.P., REGNIER P., MAIGNAN M., FRIIJLINK P., LEBLANC R., MARILIER M.
      Les Rencontres du Numérique, Paris, France, 17-18 avril, 2013, poster 16

    2011



    • 120nm AlSb/InAs HEMTs
      ROELENS Y., OLIVIER A., NOUDEVIWA A., DESPLANQUE L., DANNEVILLE F., WICHMANN N., WALLART X., BOLLAERT S.
      Actes de TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, Tanger, Maroc, 16-18 mars, 2011, session A1, CDROM, papier 185, 1-4
    • Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 300nm
      MO J., OLIVIER A., WICHMANN N., ROELENS Y., DESPLANQUE L., WALLART X., DANNEVILLE F., DAMBRINE G., MARTIN F., DESPLATS O., BOLLAERT S.
      Actes des 17èmes Journées Nationales Micro-ondes, JNM 2011, Brest, France, 18-20 mai, 2011, papier 122, 2C3, 1-4
    • Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine
      NOUDEVIWA A., OLIVIER A., ROELENS Y., DANNEVILLE F., WICHMANN N., WALDHOFF N., DESPLANQUE L., WALLART X., BOLLAERT S.
      Actes des 17èmes Journées Nationales Micro-ondes, JNM 2011, Brest, France, 18-20 mai, 2011, papier 304, 2C2, 1-4
    • Self aligned 200nm In0.53Ga0.47As
      OLIVIER A., MO J.J., WICHMANN N., ROELENS Y., DESPLANQUE L., WALLART X., DANNEVILLE F., BOLLAERT S.
      Actes de TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, Tanger, Maroc, 16-18 mars, 2011, session A1, CDROM, papier 164, 1-3
    • Relaxation de contrainte par réseau de dislocations aux interfaces GaSb/GaP et GaSb/GaAs
      EL KAZZI S., DESPLANQUE L., WANG Y., RUTERANA P., WALLART X.
      Journées Franco-Libanaises Physique et Interfaces, JFLPI, Villeneuve d'Ascq, France, 18-21 octobre, 2011
      http://www.jflpi.fr/resumes/elkazzi.pdf

    2010


    • Etude morphologique de la croissance par épitaxie par jets moléculaires de GaSb sur substrat GaP
      EL KAZZI S., DESPLANQUE L., COINON C., WALLART X., WANG Y., RUTERANA P.
      Actes des 13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, Montpellier, France, 7-9 juin, 2010, session Matériaux 2, CD-ROM, 1-4
    • Fabrication et caractérisation de MOSFET In0.53Ga0.47As de type N en technologie auto-aligné et de longueur de grille de 200nm
      MO J.J, OLIVIER A., WICHMANN N., NOUDEVIWA A., ROELENS Y., DESPLANQUE L., WALLART X., DANNEVILLE F., DAMBRINE G., MARTIN F., DESPLATS O., WANG Y., CHAUVAT M.P., RUTERANA P., MAHER H., BOLLAERT S.
      Actes des 13èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2010, Montpellier, France, 7-9 juin, 2010, session Matériaux 2, CD-ROM, 1-3
    • Imaging electron transport by scanning gate microscopy
      LIU P., SELLIER H., HUANT S., WALLART X., DESPLANQUE L., HACKENS B., MARTINS F., BAYOT V.
      Forum des Microscopies à Sonde Locale, Mittelwihr, France, 15-18 mars, 2010

    2008


    • Gravure sélective par voie humide de Ga0.5In0.5Sb et d'Al0.55In0.45Sb en vue de la réalisation de transistors bipolaires à hétérojonction
      MAIRIAUX E., DESPLANQUE L., WALLART X., DAMBRINE G., ZAKNOUNE M.
      12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, St Pierre d'Oléron, France, 3-6 juin, 2008
      http://www.jnmo08.org/JNMO2008/POSTERS/H1_poster.pdf
    • HEMTs AlSb/InAs pour applications ultra faible consommation
      BOLLAERT S., OLIVIER A., ROELENS Y., WICHMANNN N., SHCHEPETOV A., DAMBRINE G., CAPPY A., DESPLANQUES L., WALLART X.
      12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, St Pierre d'Oléron, France, 3-6 juin, 2008
      http://www.jnmo08.org/JNMO2008/POSTERS/G6_poster.pdf
    • Isolation mésa par gravures humide et sèche des HEMTs AlSb/InAs sur substrat InP
      OLIVIER A., GEHIN T., DESPLANQUE L., WALLART X., CHENG J., WICHMANN N., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S.
      11èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2008, Bordeaux, France, 14-16 mai, 2008

    2007


    • Composants plasmoniques à base d'hétérojonction AlGaN/GaN pour les applications terahertz
      VANDENBROUCK S., THERON D., LAMPIN J.F., DESPLANQUE L., BOUGRIOUA Z., GAQUIERE C.
      Actes des 15èmes Journées Nationales Microondes, JNM 2007, Toulouse, France, 23-25 mai, 2007, 8B3-1-4
    • HEMT AlSb/InAs pour applications ultra-faible consommation
      BOLLAERT S., ROELENS Y., DESPLANQUES L., WICHMANNN N., SHCHEPETOV A., WALLART X., DAMBRINE G., CAPPY A.
      Actes des 15èmes Journées Nationales Microondes, JNM 2007, Toulouse, France, 23-25 mai, 2007, 5C3-1-4

    2006


    • THz pulses on planar Goubau lines : transmitting, reflecting and coupling topologies
      AKALIN T., PEYTAVIT E., DESPLANQUE L., LAMPIN J.F.
      GDR ONDES-GT5 et GDR-E THz, Journées Thématiques ‘Champ proche et THz’, Montpellier, France, 5-6 décembre, 2006


    2005


    • Caractérisation THz de lignes de Goubau par échantillonnage électro-optique pour BioMEMS cellulaire
      TREIZEBRE A., AKALIN T., DESPLANQUE L., LAMPIN J.F., BOCQUET B.
      7èmes Journées des Phénomènes Ultra-rapides, Villeneuve d’Ascq, France, 5-7 décembre, 2005
    • [Invité] Mesures électro-optiques THz par échantillonnage Franz-Keldysh subpicoseconde
      DESPLANQUE L., LAMPIN J.F., MOLLOT F.
      7èmes Journées des Phénomènes Ultra-rapides, Villeneuve d'Ascq, France, 5-7 décembre, 2005, 24


    2003


    • Caractérisation d'un filtre réjecteur à 350 GHz par échantillonnage Franz-Keldysh
      DESPLANQUE L., LAMPIN J.F., MOLLOT F.
      Actes des 13èmes Journées Nationales Microondes, JNM 2003, Lille, France, 21-23 mai, 2003, 3C-1
    • Concepts optiques pour la génération terahertz
      CREPIN T., CZARNY R., DESPLANQUE L., MOURET G., LAMPIN J.F., THOBEL J.L., VANBESIEN O., DOLPHI D., LIPPENS D.
      Actes des 22èmes Journées Nationales d'Optique Guidée, JNOG 2003, Valence, France, 12-14 novembre, 2003


    2002



    • Génération et détection d'impulsions électriques picosecondes à l'aide de patchs de GaAs et d'AlGaAs
      DESPLANQUE L., LAMPIN J.F., MOLLOT F.
      9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, Saint-Aygulf, France, 29 septembre-2 octobre, 2002, C-3.128


    2001


    • Caractérisation THz de circuits électroniques par échantillonnage d'électroabsorption
      DESPLANQUE L., LAMPIN J.F., MOLLOT F.
      8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, Aussois, France, 15-17 janvier, 2001, A7
    • Mesures de champs électriques ultra-rapides dans les semiconducteurs
      DESPLANQUE L., LAMPIN J.F., MOLLOT F.
      Vèmes Journées des Phénomènes Ultra-Rapides, Col de Porte, France, 31 mai-1er juin, 2001, 18

    Thèse

    • Caractérisation électro-opique de composants térahertz par échantillonnage Franz-Keldysh subpicoseconde
      DESPLANQUE L.
      Thèse de doctorat en Microondes et Microtechnologies, Université de Lille 1, 20 novembre 2003
      http://tel.archives-ouvertes.fr/tel-00012147

    Habilitation à diriger des recherches

    • Contribution à la croissance par épitaxie par jets moléculaires d’hétérostructures antimoniées pour des applications électroniques haute fréquence et faible consommation
      DESPLANQUE L.
      Habilitation à diriger des recherches en Sciences Physiques, Université de Lille 1, 19 janvier 2017 http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-462563

    Ouvrages scientifiques

    • Dispositifs à matériaux petit gap pour électronique ultra-faible consommation
      BOLLAERT S., OLIVIER A., WICHMANN N., ROELENS Y., DESPLANQUE L., WALLART X., CAPPY A., DAMBRINE G.
      in La micro-nano électronique, enjeux et mutations, Leray J.L., Boudenot J.C., Gautier J. (Eds)
      ISBN 978-2-271-06829-3
      CNRS ÉDITIONS (2009) 183-186