It consists of the following elements:

• A scanning electron microscope (SEM)
• An atomic force microscope composed of robotic elements that can be controlled from the outside of the vacuum SEM chamber to adjust the position of the elements of the optical cantilever detection system
• An atomic force microscope controller (Nanonis RC5)
• A measuring probe compatible with high-frequency measurement up to 67 GHz
• A vector network analyzer for microwave measurements
• A PC for controlling all the elements of the AFM

The instrument was evaluated on a set of 48 MOS capacitors with circular electrodes of 1, 2, 3 and 4 μm in diameter and 4 different thicknesses of silicon oxide. Each capacitor is repeated 3 times. Values typically range from 100 aF to 10 fF. The measurement results are shown in the figure. The shape of the probe and its tip radius (about 70 nm) can be observed using the electron microscope. Figure b shows the topography of the surface. We can see the metal contacts from 1 to 4 μm in diameter. Figures c and d show the real and imaginary parts of the reflection coefficient (S parameter) measured by the VNA at 30 GHz. Finally, figure e shows the capacity deduced after calibration. This is done by calculating 3 capacity values on 3 components chosen from the 16 possible values.