Emiliano Pallecchi

Maître de conférences CNU : SECTION 63 - ELECTRONIQUE, OPTRONIQUE ET SYSTEMES

UMR 8520 - INSTITUT D'ELECTRONIQUE, DE MICROELECTRONIQUE ET DE NANOTECHNOLOGIE

Publications

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Happy"], "halId_s":"hal-05010227", "docType_s":"COMM", "producedDateY_i":2025 },{ "citationRef_s":"2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.214-217, <a target=\"_blank\" href=\"https://dx.doi.org/10.23919/EuMIC61603.2024.10732884\">⟨10.23919/EuMIC61603.2024.10732884⟩</a>", "citationFull_s":"S. Skrzypczak, C. Ligaud, Y. Bousbaa, Guillaume Ducournau, Dominique Vignaud, et al.. Ultra-broad Band RF Switches Based on Multilayers MoS2. 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.214-217, <a target=\"_blank\" href=\"https://dx.doi.org/10.23919/EuMIC61603.2024.10732884\">⟨10.23919/EuMIC61603.2024.10732884⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04765570v1\">⟨hal-04765570⟩</a>", "title_s":["Ultra-broad Band RF Switches Based on Multilayers MoS2"], "authFullName_s":["S. Skrzypczak","C. Ligaud","Y. Bousbaa","Guillaume Ducournau","Dominique Vignaud","Etienne Okada","J. David-Vifflantzeff","S. Cadot","L. Le Van-Jodin","R. Gassilloud","G. Bigeard","A. Cresti","Yves Deblock","H. Happy","E. Pallecchi"], "halId_s":"hal-04765570", "docType_s":"COMM", "producedDateY_i":2024 },{ "citationRef_s":"Materials, 2024, 17 (14), 3553, 12 p. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/ma17143553\">⟨10.3390/ma17143553⟩</a>", "citationFull_s":"Dalal Fadil, Wlodek Strupinski, Emiliano Pallecchi, Henri Happy. Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC. Materials, 2024, 17 (14), 3553, 12 p. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/ma17143553\">⟨10.3390/ma17143553⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04673340v1\">⟨hal-04673340⟩</a>", "title_s":["Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC"], "authFullName_s":["Dalal Fadil","Wlodek Strupinski","Emiliano Pallecchi","Henri Happy"], "halId_s":"hal-04673340", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"Nature Reviews Electrical Engineering, 2024, 1 (1), pp.10-23. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s44287-023-00001-w\">⟨10.1038/s44287-023-00001-w⟩</a>", "citationFull_s":"Dahyeon Kim, Sung Jin Yang, Nicolás Wainstein, Simon Skrzypczak, Guillaume Ducournau, et al.. Emerging memory electronics for non-volatile radiofrequency switching technologies. Nature Reviews Electrical Engineering, 2024, 1 (1), pp.10-23. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s44287-023-00001-w\">⟨10.1038/s44287-023-00001-w⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04717207v1\">⟨hal-04717207⟩</a>", "title_s":["Emerging memory electronics for non-volatile radiofrequency switching technologies"], "authFullName_s":["Dahyeon Kim","Sung Jin Yang","Nicolás Wainstein","Simon Skrzypczak","Guillaume Ducournau","Emiliano Pallecchi","Henri Happy","Eilam Yalon","Myungsoo Kim","Deji Akinwande"], "halId_s":"hal-04717207", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"2023 38th Conference on Design of Circuits and Integrated Systems (DCIS), Nov 2023, Málaga, Spain. pp.1-5, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/DCIS58620.2023.10335977\">⟨10.1109/DCIS58620.2023.10335977⟩</a>", "citationFull_s":"Simon Skrzypczak, Di Zhou, Wei Wei, Dalal Fadil, Dominique Vignaud, et al.. Devices and circuits for HF applications based on 2D materials. 2023 38th Conference on Design of Circuits and Integrated Systems (DCIS), Nov 2023, Málaga, Spain. pp.1-5, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/DCIS58620.2023.10335977\">⟨10.1109/DCIS58620.2023.10335977⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04396932v1\">⟨hal-04396932⟩</a>", "title_s":["Devices and circuits for HF applications based on 2D materials"], "authFullName_s":["Simon Skrzypczak","Di Zhou","Wei Wei","Dalal Fadil","Dominique Vignaud","Emiliano Pallecchi","Henri Happy"], "halId_s":"hal-04396932", "docType_s":"COMM", "producedDateY_i":2023 },{ "citationRef_s":"Microelectronics Journal, 2023, 133, pp.105715. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.mejo.2023.105715\">⟨10.1016/j.mejo.2023.105715⟩</a>", "citationFull_s":"Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei, Emiliano Pallecchi, Henri Happy, et al.. Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs. Microelectronics Journal, 2023, 133, pp.105715. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.mejo.2023.105715\">⟨10.1016/j.mejo.2023.105715⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03981909v1\">⟨hal-03981909⟩</a>", "title_s":["Straightforward bias- and frequency-dependent small-signal model extraction for single-layer graphene FETs"], "authFullName_s":["Nikolaos Mavredakis","Anibal Pacheco-Sanchez","Wei Wei","Emiliano Pallecchi","Henri Happy","David Jiménez"], "halId_s":"hal-03981909", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. pp.902-905, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/IMS37962.2022.9865419\">⟨10.1109/IMS37962.2022.9865419⟩</a>", "citationFull_s":"Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, P. Szriftgiser, Sung Jin Yang, et al.. Towards 500GHz Non-Volatile Monolayer 6G Switches. 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. pp.902-905, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/IMS37962.2022.9865419\">⟨10.1109/IMS37962.2022.9865419⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03698147v1\">⟨hal-03698147⟩</a>", "title_s":["Towards 500GHz Non-Volatile Monolayer 6G Switches"], "authFullName_s":["Myungsoo Kim","Guillaume Ducournau","Simon Skrzypczak","P. Szriftgiser","Sung Jin Yang","Nicolas Wainstein","Keren Stern","Henri Happy","Eilam Yalon","Emiliano Pallecchi","Deji Akinwande"], "halId_s":"hal-03698147", "docType_s":"COMM", "producedDateY_i":2022 },{ "citationRef_s":"XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France", "citationFull_s":"S. Skrzypczak, Myungsoo Kim, Guillaume Ducournau, Dominique Vignaud, Remy Gassilloud, et al.. Commutateur RF fabriqué à partir de matériau 2D. XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France. <a target=\"_blank\" href=\"https://hal.science/hal-03702712v1\">⟨hal-03702712⟩</a>", "title_s":["Commutateur RF fabriqué à partir de matériau 2D"], "authFullName_s":["S. Skrzypczak","Myungsoo Kim","Guillaume Ducournau","Dominique Vignaud","Remy Gassilloud","Alessandro Cresti","J. David-Vifflantzeff","Yves Deblock","Jawad Hadid","Etienne Okada","Vanessa Avramovic","Emiliano Pallecchi","Deji Akinwande","Henri Happy"], "halId_s":"hal-03702712", "docType_s":"COMM", "producedDateY_i":2022 },{ "citationRef_s":"Nature Electronics, 2022, 5, pp.367-373. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41928-022-00766-2\">⟨10.1038/s41928-022-00766-2⟩</a>", "citationFull_s":"Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, Sung Jin Yang, Pascal Szriftgiser, et al.. Monolayer molybdenum disulfide switches for 6G communication systems. Nature Electronics, 2022, 5, pp.367-373. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41928-022-00766-2\">⟨10.1038/s41928-022-00766-2⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03689339v1\">⟨hal-03689339⟩</a>", "title_s":["Monolayer molybdenum disulfide switches for 6G communication systems"], "authFullName_s":["Myungsoo Kim","Guillaume Ducournau","Simon Skrzypczak","Sung Jin Yang","Pascal Szriftgiser","Nicolas Wainstein","Keren Stern","Henri Happy","Eilam Yalon","Emiliano Pallecchi","Deji Akinwande"], "halId_s":"hal-03689339", "docType_s":"ART", "producedDateY_i":2022 },{ "citationRef_s":"Nature Communications, 2021, 12 (1), pp.2728. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-021-22943-1\">⟨10.1038/s41467-021-22943-1⟩</a>", "citationFull_s":"A. Montanaro, W. Wei, D. de Fazio, U. Sassi, G. Soavi, et al.. Optoelectronic mixing with high-frequency graphene transistors. Nature Communications, 2021, 12 (1), pp.2728. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-021-22943-1\">⟨10.1038/s41467-021-22943-1⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03259559v1\">⟨hal-03259559⟩</a>", "title_s":["Optoelectronic mixing with high-frequency graphene transistors"], "authFullName_s":["A. Montanaro","W. Wei","D. de Fazio","U. Sassi","G. Soavi","P. Aversa","A. Ferrari","H. Happy","P. Legagneux","Emiliano Pallecchi"], "halId_s":"hal-03259559", "docType_s":"ART", "producedDateY_i":2021 },{ "citationRef_s":"16emes journées pédagogiques du CNFM, JPCNFM’2021, Dec 2021, Saint-Malo, France", "citationFull_s":"S. Bollaert, Emiliano Pallecchi, Davy Gaillot. Master Nanosciences Nanotechnologies de l’Université de Lille: une formation aux technologies émergentes. 16emes journées pédagogiques du CNFM, JPCNFM’2021, Dec 2021, Saint-Malo, France. <a target=\"_blank\" href=\"https://hal.science/hal-03464701v1\">⟨hal-03464701⟩</a>", "title_s":["Master Nanosciences Nanotechnologies de l’Université de Lille: une formation aux technologies émergentes"], "authFullName_s":["S. Bollaert","Emiliano Pallecchi","Davy Gaillot"], "halId_s":"hal-03464701", "docType_s":"COMM", "producedDateY_i":2021 },{ "citationRef_s":"Graphene2021, Oct 2021, Grenoble, France", "citationFull_s":"S. Skrzypczak, K. Myungsoo, Guillaume Ducournau, Dominique Vignaud, R. Gassilloud, et al.. Non-linearity of RF switch based on 2D materials. Graphene2021, Oct 2021, Grenoble, France. <a target=\"_blank\" href=\"https://hal.science/hal-03584529v1\">⟨hal-03584529⟩</a>", "title_s":["Non-linearity of RF switch based on 2D materials"], "authFullName_s":["S. Skrzypczak","K. Myungsoo","Guillaume Ducournau","Dominique Vignaud","R. Gassilloud","Alessandro Cresti","J. David-Vifflantzeff","Yves Deblock","J. Hadid","Vanessa Avramovic","Henri Happy","D. Akinwande","Emiliano Pallecchi"], "halId_s":"hal-03584529", "docType_s":"COMM", "producedDateY_i":2021 },{ "citationRef_s":"Nanomaterials, 2021, 11 (10), pp.2528. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/nano11102528\">⟨10.3390/nano11102528⟩</a>", "citationFull_s":"Soukaina Ben Salk, Reetu Raj Pandey, Phi Pham, Di Zhou, Wei Wei, et al.. Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer. Nanomaterials, 2021, 11 (10), pp.2528. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/nano11102528\">⟨10.3390/nano11102528⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03545150v1\">⟨hal-03545150⟩</a>", "title_s":["Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer"], "authFullName_s":["Soukaina Ben Salk","Reetu Raj Pandey","Phi Pham","Di Zhou","Wei Wei","Guillaume Cochez","Dominique Vignaud","Emiliano Pallecchi","Peter Burke","Henri Happy"], "halId_s":"hal-03545150", "docType_s":"ART", "producedDateY_i":2021 },{ "citationRef_s":"2021 Device Research Conference, DRC 2021, Jun 2021, Santa Barbara, CA, United States. pp.9467136, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/DRC52342.2021.9467136\">⟨10.1109/DRC52342.2021.9467136⟩</a>", "citationFull_s":"Myungsoo Kim, Emiliano Pallecchi, Henri Happy, Deji Akinwande. Single-pole-double-throw RF switches based on monolayer MoS2. 2021 Device Research Conference, DRC 2021, Jun 2021, Santa Barbara, CA, United States. pp.9467136, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/DRC52342.2021.9467136\">⟨10.1109/DRC52342.2021.9467136⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03362258v1\">⟨hal-03362258⟩</a>", "title_s":["Single-pole-double-throw RF switches based on monolayer MoS2"], "authFullName_s":["Myungsoo Kim","Emiliano Pallecchi","Henri Happy","Deji Akinwande"], "halId_s":"hal-03362258", "docType_s":"COMM", "producedDateY_i":2021 },{ "citationRef_s":"2021, pp.3507. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-021-23916-0\">⟨10.1038/s41467-021-23916-0⟩</a>", "citationFull_s":"A. Montanaro, W. Wei, D. de Fazio, U. Sassi, G. Soavi, et al.. Author Correction: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1). 2021, pp.3507. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-021-23916-0\">⟨10.1038/s41467-021-23916-0⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03542160v1\">⟨hal-03542160⟩</a>", "title_s":["Author Correction: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1)"], "authFullName_s":["A. Montanaro","W. Wei","D. de Fazio","U. Sassi","G. Soavi","P. Aversa","A.C. Ferrari","Henri Happy","P. Legagneux","Emiliano Pallecchi"], "halId_s":"hal-03542160", "docType_s":"OTHER", "producedDateY_i":2021 },{ "citationRef_s":"IEEE Transactions on Microwave Theory and Techniques, 2021, 69 (11), pp.4639-4646. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TMTT.2021.3105672\">⟨10.1109/TMTT.2021.3105672⟩</a>", "citationFull_s":"N. Mavredakis, A. Pacheco-Sanchez, P. Sakalas, W. Wei, Emiliano Pallecchi, et al.. Bias-dependent intrinsic rf thermal noise modeling and characterization of single-layer graphene fets. IEEE Transactions on Microwave Theory and Techniques, 2021, 69 (11), pp.4639-4646. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TMTT.2021.3105672\">⟨10.1109/TMTT.2021.3105672⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03542154v1\">⟨hal-03542154⟩</a>", "title_s":["Bias-dependent intrinsic rf thermal noise modeling and characterization of single-layer graphene fets"], "authFullName_s":["N. Mavredakis","A. Pacheco-Sanchez","P. Sakalas","W. Wei","Emiliano Pallecchi","Henri Happy","D. Jimenez"], "halId_s":"hal-03542154", "docType_s":"ART", "producedDateY_i":2021 },{ "citationRef_s":"Sensors and Actuators B: Chemical, 2021, 327, pp.128895. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.snb.2020.128895\">⟨10.1016/j.snb.2020.128895⟩</a>", "citationFull_s":"Anna Susloparova, Sophie Halliez, Séverine Begard, Morvane Colin, Luc Buée, et al.. Low impedance and highly transparent microelectrode arrays (MEA) for in vitro neuron electrical activity probing. Sensors and Actuators B: Chemical, 2021, 327, pp.128895. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.snb.2020.128895\">⟨10.1016/j.snb.2020.128895⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03094481v1\">⟨hal-03094481⟩</a>", "title_s":["Low impedance and highly transparent microelectrode arrays (MEA) for in vitro neuron electrical activity probing"], "authFullName_s":["Anna Susloparova","Sophie Halliez","Séverine Begard","Morvane Colin","Luc Buée","Sébastien Pecqueur","F. Alibart","V. Thomy","S. Arscott","Emiliano Pallecchi","Yannick Coffinier"], "halId_s":"hal-03094481", "docType_s":"ART", "producedDateY_i":2021 },{ "citationRef_s":"2020", "citationFull_s":"Soukaina Ben Salk, Reetu Raj Pandey, Phi Hq Pham, Di Zhou, Dominique Vignaud, et al.. Physical and electrical characterization of bubble free transferred single crystal graphene. 2020. <a target=\"_blank\" href=\"https://hal.science/hal-03079483v1\">⟨hal-03079483⟩</a>", "title_s":["Physical and electrical characterization of bubble free transferred single crystal graphene"], "authFullName_s":["Soukaina Ben Salk","Reetu Raj Pandey","Phi Hq Pham","Di Zhou","Dominique Vignaud","Emiliano Pallecchi","Peter Burke","Henri Happy"], "halId_s":"hal-03079483", "docType_s":"UNDEFINED", "producedDateY_i":2020 },{ "citationRef_s":"Graphene2020, Oct 2020, Grenoble, France", "citationFull_s":"David Mele, Q. Wilmart, M. Boukhicha, H. Graef, D. Fruleux, et al.. Graphene field-effect transistors with velocity saturation. Graphene2020, Oct 2020, Grenoble, France. <a target=\"_blank\" href=\"https://hal.science/hal-03467761v1\">⟨hal-03467761⟩</a>", "title_s":["Graphene field-effect transistors with velocity saturation"], "authFullName_s":["David Mele","Q. Wilmart","M. Boukhicha","H. Graef","D. Fruleux","A. Schmitt","J. Palomo","M. Rosticher","T. Taniguchi","K. Watanabe","V. Bouchiat","E. Baudin","J.M. Berroir","G. Feve","E. Bocquillon","Emiliano Pallecchi","B. Placais"], "halId_s":"hal-03467761", "docType_s":"COMM", "producedDateY_i":2020 },{ "citationRef_s":"Nature Electronics, 2020, 3 (8), pp.479-485. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41928-020-0416-x\">⟨10.1038/s41928-020-0416-x⟩</a>", "citationFull_s":"Myungsoo Kim, Emiliano Pallecchi, Ruijing Ge, Xiaohan Wu, Guillaume Ducournau, et al.. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nature Electronics, 2020, 3 (8), pp.479-485. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41928-020-0416-x\">⟨10.1038/s41928-020-0416-x⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03140626v1\">⟨hal-03140626⟩</a>", "title_s":["Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems"], "authFullName_s":["Myungsoo Kim","Emiliano Pallecchi","Ruijing Ge","Xiaohan Wu","Guillaume Ducournau","Jack C. Lee","Henri Happy","Deji Akinwande"], "halId_s":"hal-03140626", "docType_s":"ART", "producedDateY_i":2020 },{ "citationRef_s":"Actu Lille, édition spéciale #11, 18 juin, 2020", "citationFull_s":"Myungsoo Kim, Emiliano Pallecchi, Ruijing Ge, Xiaohan Wu, Guillaume Ducournau, et al.. Des composants électroniques pour la 5G. Actu Lille, édition spéciale #11, 18 juin, 2020. <a target=\"_blank\" href=\"https://hal.science/hal-03468545v1\">⟨hal-03468545⟩</a>", "title_s":["Des composants électroniques pour la 5G"], "authFullName_s":["Myungsoo Kim","Emiliano Pallecchi","Ruijing Ge","Xiaohan Wu","Guillaume Ducournau","C. Lee Jack","Henri Happy","Deji Akinwande"], "halId_s":"hal-03468545", "docType_s":"OTHER", "producedDateY_i":2020 },{ "citationRef_s":"Applied Sciences, 2020, 10 (6), pp.2183. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10062183\">⟨10.3390/app10062183⟩</a>", "citationFull_s":"Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, et al.. A broadband active microwave monolithically integrated circuit balun in graphene technology. Applied Sciences, 2020, 10 (6), pp.2183. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10062183\">⟨10.3390/app10062183⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02884085v1\">⟨hal-02884085⟩</a>", "title_s":["A broadband active microwave monolithically integrated circuit balun in graphene technology"], "authFullName_s":["Dalal Fadil","Vikram Passi","Wei Wei","Soukaina Ben Salk","Di Zhou","Wlodek Strupinski","Max C Lemme","Thomas Zimmer","Emiliano Pallecchi","Henri Happy","Sebastien Fregonese"], "halId_s":"hal-02884085", "docType_s":"ART", "producedDateY_i":2020 },{ "citationRef_s":"Materials Today Communications, 2020, pp.101073. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.mtcomm.2020.101073\">⟨10.1016/j.mtcomm.2020.101073⟩</a>", "citationFull_s":"Tiffany Baëtens, Severine Begard, Emiliano Pallecchi, S. Arscott, V. Thomy, et al.. The effect of thermal treatment on the neuronal cell biocompatibility of SU-8. Materials Today Communications, 2020, pp.101073. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.mtcomm.2020.101073\">⟨10.1016/j.mtcomm.2020.101073⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02514939v1\">⟨hal-02514939⟩</a>", "title_s":["The effect of thermal treatment on the neuronal cell biocompatibility of SU-8"], "authFullName_s":["Tiffany Baëtens","Severine Begard","Emiliano Pallecchi","S. Arscott","V. Thomy","Sophie S. Halliez"], "halId_s":"hal-02514939", "docType_s":"ART", "producedDateY_i":2020 },{ "citationRef_s":"2020 IEEE Latin America Electron Devices Conference (LAEDC), Feb 2020, San Jose, Costa Rica. pp.1-5, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/LAEDC49063.2020.9073546\">⟨10.1109/LAEDC49063.2020.9073546⟩</a>", "citationFull_s":"Wei Wei, Fadil Dalal, Sebastien Fregonese, Wlodek Strupinski, Emiliano Pallecchi, et al.. 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DPG Spring Meeting, 2009, Dresden, France. <a target=\"_blank\" href=\"https://hal.science/hal-00528728v1\">⟨hal-00528728⟩</a>", "title_s":["Microwave graphene nano-transistors"], "authFullName_s":["Andreas Betz","Emiliano Pallecchi","Julien Chaste","Takis Kontos","Gwendal Fève","Jean-Marc Berroir","Bernard Plaçais"], "halId_s":"hal-00528728", "docType_s":"COMM", "producedDateY_i":2009 }] } }

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Emiliano Pallecchi

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