David Mele
Maître de conférences
Laboratoire / équipe
Publications
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"citationRef_s":"<i>ACS Applied Materials & Interfaces</i>, 2024, 16 (12), pp.14852-14863. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acsami.3c19031\">⟨10.1021/acsami.3c19031⟩</a>",
"citationFull_s":"My Nghe Tran, Myriam Moreau, Ahmed Addad, Adrien Teurtrie, Thomas Roland, et al.. Boosting Gas-Phase TiO 2 Photocatalysis with Weak Electric Field Strengths of Volt/Centimeter. <i>ACS Applied Materials & Interfaces</i>, 2024, 16 (12), pp.14852-14863. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acsami.3c19031\">⟨10.1021/acsami.3c19031⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04526258\">⟨hal-04526258⟩</a>",
"title_s":["Boosting Gas-Phase TiO 2 Photocatalysis with Weak Electric Field Strengths of Volt/Centimeter"],
"authFullName_s":["My Nghe Tran",
"Myriam Moreau",
"Ahmed Addad",
"Adrien Teurtrie",
"Thomas Roland",
"Vincent de Waele",
"Marc Dewitte",
"Louis Thomas",
"Gaëtan Lévêque",
"Chunyang Dong",
"Pardis Simon",
"Karima Ben Tayeb",
"D. Mele",
"Vitaly Ordomsky",
"Bruno Grandidier"],
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"citationRef_s":"<i>Nature Physics</i>, 2023, 19 (6), pp.830-835. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41567-023-01978-9\">⟨10.1038/s41567-023-01978-9⟩</a>",
"citationFull_s":"A. Schmitt, P. Vallet, D. Mele, M. Rosticher, T. Taniguchi, et al.. Mesoscopic Klein-Schwinger effect in graphene. <i>Nature Physics</i>, 2023, 19 (6), pp.830-835. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41567-023-01978-9\">⟨10.1038/s41567-023-01978-9⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04035853v2\">⟨hal-04035853v2⟩</a>",
"title_s":["Mesoscopic Klein-Schwinger effect in graphene"],
"authFullName_s":["A. Schmitt",
"P. Vallet",
"D. Mele",
"M. Rosticher",
"T. Taniguchi",
"K. Watanabe",
"E. Bocquillon",
"G. Fève",
"Jean-Marc Berroir",
"C. Voisin",
"J. Cayssol",
"M. Goerbig",
"J. Troost",
"E. Baudin",
"Bernard Plaçais"],
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"citationRef_s":"<i>Physical Review B</i>, 2023, 107 (16), pp.L161104. <a target=\"_blank\" href=\"https://dx.doi.org/10.1103/PhysRevB.107.L161104\">⟨10.1103/PhysRevB.107.L161104⟩</a>",
"citationFull_s":"A. Schmitt, D. Mele, M. Rosticher, T. Taniguchi, K. Watanabe, et al.. High-field 1/f noise in hBN-encapsulated graphene transistors. <i>Physical Review B</i>, 2023, 107 (16), pp.L161104. <a target=\"_blank\" href=\"https://dx.doi.org/10.1103/PhysRevB.107.L161104\">⟨10.1103/PhysRevB.107.L161104⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04086406\">⟨hal-04086406⟩</a>",
"title_s":["High-field 1/f noise in hBN-encapsulated graphene transistors"],
"authFullName_s":["A. Schmitt",
"D. Mele",
"M. Rosticher",
"T. Taniguchi",
"K. Watanabe",
"C. Maestre",
"C. Journet",
"V. Garnier",
"Gwendal Fève",
"J. Berroir",
"Christophe Voisin",
"B. Plaçais",
"Emmanuel Baudin"],
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"citationRef_s":"<i>Materials Research Express</i>, 2022, 9 (6), pp.065901. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2053-1591/ac4fe1\">⟨10.1088/2053-1591/ac4fe1⟩</a>",
"citationFull_s":"Aurelie Pierret, David Mele, Holger Graef, Jose Palomo, Takashi Taniguchi, et al.. Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride. <i>Materials Research Express</i>, 2022, 9 (6), pp.065901. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2053-1591/ac4fe1\">⟨10.1088/2053-1591/ac4fe1⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03564100\">⟨hal-03564100⟩</a>",
"title_s":["Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride"],
"authFullName_s":["Aurelie Pierret",
"David Mele",
"Holger Graef",
"Jose Palomo",
"Takashi Taniguchi",
"Kenji Watanabe",
"Y. Li",
"Bérangère Toury",
"Catherine Journet",
"Philippe Steyer",
"Vincent Garnier",
"Annick Loiseau",
"Jean-Marc Berroir",
"E. Bocquillon",
"Gwendal Feve",
"Christophe Voisin",
"Emmanuel Baudin",
"Michael Rosticher",
"Bernard Plaçais"],
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"citationRef_s":"<i>Plasmonics</i>, 2020, 15 (6), pp.1653-1660. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s11468-020-01185-9\">⟨10.1007/s11468-020-01185-9⟩</a>",
"citationFull_s":"Médéric Lequeux, David Mele, Priyamvada Venugopalan, Raymond Gillibert, Souhir Boujday, et al.. Plasmonic Properties of Gold Nanostructures on Gold Film. <i>Plasmonics</i>, 2020, 15 (6), pp.1653-1660. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s11468-020-01185-9\">⟨10.1007/s11468-020-01185-9⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03044556\">⟨hal-03044556⟩</a>",
"title_s":["Plasmonic Properties of Gold Nanostructures on Gold Film"],
"authFullName_s":["Médéric Lequeux",
"David Mele",
"Priyamvada Venugopalan",
"Raymond Gillibert",
"Souhir Boujday",
"Wolfgang Knoll",
"Jakub Dostalek",
"Marc Lamy de La Chapelle"],
"halId_s":"hal-03044556",
"docType_s":"ART",
"producedDateY_i":2020},
{
"citationRef_s":"<i>Graphene2020</i>, Oct 2020, Grenoble, France",
"citationFull_s":"David Mele, Q. Wilmart, M. Boukhicha, H. Graef, D. Fruleux, et al.. Graphene field-effect transistors with velocity saturation. <i>Graphene2020</i>, Oct 2020, Grenoble, France. <a target=\"_blank\" href=\"https://hal.science/hal-03467761\">⟨hal-03467761⟩</a>",
"title_s":["Graphene field-effect transistors with velocity saturation"],
"authFullName_s":["David Mele",
"Q. Wilmart",
"M. Boukhicha",
"H. Graef",
"D. Fruleux",
"A. Schmitt",
"J. Palomo",
"M. Rosticher",
"T. Taniguchi",
"K. Watanabe",
"V. Bouchiat",
"E. Baudin",
"J.M. Berroir",
"G. Feve",
"E. Bocquillon",
"Emiliano Pallecchi",
"B. Placais"],
"halId_s":"hal-03467761",
"docType_s":"COMM",
"producedDateY_i":2020},
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"citationRef_s":"<i>Applied Sciences</i>, 2020, 10 (2), pp.446. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10020446\">⟨10.3390/app10020446⟩</a>",
"citationFull_s":"Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, José Palomo, et al.. High-frequency limits of graphene field-effect transistors with velocity saturation. <i>Applied Sciences</i>, 2020, 10 (2), pp.446. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10020446\">⟨10.3390/app10020446⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02520621\">⟨hal-02520621⟩</a>",
"title_s":["High-frequency limits of graphene field-effect transistors with velocity saturation"],
"authFullName_s":["Quentin Wilmart",
"Mohamed Boukhicha",
"Holger Graef",
"David Mele",
"José Palomo",
"Michael Rosticher",
"Takashi Taniguchi",
"Kenji Watanabe",
"Vincent Bouchiat",
"Emmanuel Baudin",
"Jean-Marc Berroir",
"Erwann Bocquillon",
"Gwendal Fève",
"Emiliano Pallecchi",
"Bernard Plaçais"],
"halId_s":"hal-02520621",
"docType_s":"ART",
"producedDateY_i":2020},
{
"citationRef_s":"<i>Nature Communications</i>, 2019, 10 (1), pp.2428. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-019-10326-6\">⟨10.1038/s41467-019-10326-6⟩</a>",
"citationFull_s":"H. Graef, Q. Wilmart, M. Rosticher, D. Mele, L. Banszerus, et al.. A corner reflector of graphene Dirac fermions as a phonon-scattering sensor. <i>Nature Communications</i>, 2019, 10 (1), pp.2428. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-019-10326-6\">⟨10.1038/s41467-019-10326-6⟩</a>. <a target=\"_blank\" href=\"https://hal.sorbonne-universite.fr/hal-02159529\">⟨hal-02159529⟩</a>",
"title_s":["A corner reflector of graphene Dirac fermions as a phonon-scattering sensor"],
"authFullName_s":["H. Graef",
"Q. Wilmart",
"M. Rosticher",
"D. Mele",
"L. Banszerus",
"C. Stampfer",
"T. Taniguchi",
"K. Watanabe",
"Jean-Marc Berroir",
"Erwann Bocquillon",
"G. Fève",
"E H T Teo",
"Bernard Plaçais"],
"halId_s":"hal-02159529",
"docType_s":"ART",
"producedDateY_i":2019},
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"citationRef_s":"<i>Journal of Physics: Materials</i>, 2018, 1 (1), pp.01LT02. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2515-7639/aadd8c\">⟨10.1088/2515-7639/aadd8c⟩</a>",
"citationFull_s":"H Graef, D. Mele, M. Rosticher, L Banszerus, C Stampfer, et al.. Ultra-long wavelength Dirac plasmons in graphene capacitors. <i>Journal of Physics: Materials</i>, 2018, 1 (1), pp.01LT02. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2515-7639/aadd8c\">⟨10.1088/2515-7639/aadd8c⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02318668\">⟨hal-02318668⟩</a>",
"title_s":["Ultra-long wavelength Dirac plasmons in graphene capacitors"],
"authFullName_s":["H Graef",
"D. Mele",
"M. Rosticher",
"L Banszerus",
"C Stampfer",
"T. Taniguchi",
"K Watanabe",
"E. Bocquillon",
"G. Fève",
"J-M Berroir",
"E Teo",
"B. Plaçais"],
"halId_s":"hal-02318668",
"docType_s":"ART",
"producedDateY_i":2018},
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"citationRef_s":"<i>Electronic Materials Letters</i>, 2018, 14 (2), pp.133-138. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s13391-018-0038-x\">⟨10.1007/s13391-018-0038-x⟩</a>",
"citationFull_s":"David Mele, Sarah Mehdhbi, Dalal Fadil, Wei Wei, Abdelkarim Ouerghi, et al.. Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications. <i>Electronic Materials Letters</i>, 2018, 14 (2), pp.133-138. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s13391-018-0038-x\">⟨10.1007/s13391-018-0038-x⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03183508\">⟨hal-03183508⟩</a>",
"title_s":["Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications"],
"authFullName_s":["David Mele",
"Sarah Mehdhbi",
"Dalal Fadil",
"Wei Wei",
"Abdelkarim Ouerghi",
"Sylvie Lepilliet",
"Henri Happy",
"Emiliano Pallecchi"],
"halId_s":"hal-03183508",
"docType_s":"ART",
"producedDateY_i":2018},
{
"citationRef_s":"<i>2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)</i>, May 2016, Las Vegas, Nevada, United States. pp.1255-1260, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ITHERM.2016.7517691\">⟨10.1109/ITHERM.2016.7517691⟩</a>",
"citationFull_s":"Georges Pavlidis, David Mele, Ting Cheng, F Medjdoub, Samuel Graham. The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry. <i>2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)</i>, May 2016, Las Vegas, Nevada, United States. pp.1255-1260, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ITHERM.2016.7517691\">⟨10.1109/ITHERM.2016.7517691⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03028471\">⟨hal-03028471⟩</a>",
"title_s":["The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry"],
"authFullName_s":["Georges Pavlidis",
"David Mele",
"Ting Cheng",
"F Medjdoub",
"Samuel Graham"],
"halId_s":"hal-03028471",
"docType_s":"COMM",
"producedDateY_i":2016},
{
"citationRef_s":"<i>IEEE Journal of the Electron Devices Society</i>, 2015, 3 (1), pp.99. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/JEDS.2014.2360408\">⟨10.1109/JEDS.2014.2360408⟩</a>",
"citationFull_s":"Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, et al.. Source-Pull and Load-Pull Characterization of Graphene FET. <i>IEEE Journal of the Electron Devices Society</i>, 2015, 3 (1), pp.99. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/JEDS.2014.2360408\">⟨10.1109/JEDS.2014.2360408⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01090826\">⟨hal-01090826⟩</a>",
"title_s":["Source-Pull and Load-Pull Characterization of Graphene FET"],
"authFullName_s":["Sebastien Fregonese",
"Magali de Matos",
"David Mele",
"Cristell Maneux",
"Henri Happy",
"Thomas Zimmer"],
"halId_s":"hal-01090826",
"docType_s":"ART",
"producedDateY_i":2015},
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"citationRef_s":"<i>44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014</i>, Oct 2014, Rome, Italy. pp.367-370, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/EuMC.2014.6986446\">⟨10.1109/EuMC.2014.6986446⟩</a>",
"citationFull_s":"Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, et al.. Fabrication and characterization of CVD grown graphene based field-effect transistor. <i>44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014</i>, Oct 2014, Rome, Italy. pp.367-370, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/EuMC.2014.6986446\">⟨10.1109/EuMC.2014.6986446⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03335830\">⟨hal-03335830⟩</a>",
"title_s":["Fabrication and characterization of CVD grown graphene based field-effect transistor"],
"authFullName_s":["Wei Wei",
"Geetanjali Deokar",
"Mohamed Moez Belhaj",
"D. Mele",
"Emiliano Pallecchi",
"Emmanuelle Pichonat",
"Dominique Vignaud",
"Henri Happy"],
"halId_s":"hal-03335830",
"docType_s":"COMM",
"producedDateY_i":2014},
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"citationRef_s":"<i>44th European Microwave Conference</i>, Oct 2014, Rome, Italy. pp.1452-1455, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/EuMC.2014.6986720\">⟨10.1109/EuMC.2014.6986720⟩</a>",
"citationFull_s":"Poornakarthik Nakkala, Audrey Martin, Michel Campovecchio, Henri Happy, Mohamed Salah Khenissa, et al.. High Frequency Characterization and Compact Electrical Modelling of Graphene Field Effect Transistors\r\n. <i>44th European Microwave Conference</i>, Oct 2014, Rome, Italy. pp.1452-1455, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/EuMC.2014.6986720\">⟨10.1109/EuMC.2014.6986720⟩</a>. <a target=\"_blank\" href=\"https://unilim.hal.science/hal-01136463\">⟨hal-01136463⟩</a>",
"title_s":["High Frequency Characterization and Compact Electrical Modelling of Graphene Field Effect Transistors"],
"authFullName_s":["Poornakarthik Nakkala",
"Audrey Martin",
"Michel Campovecchio",
"Henri Happy",
"Mohamed Salah Khenissa",
"Mohamed Moez Belhaj",
"D. Mele",
"Ivy Colambo",
"Emiliano Pallecchi",
"Dominique Vignaud"],
"halId_s":"hal-01136463",
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"citationRef_s":"<i>Solid State Device Research Conference (ESSDERC), 2014, 44th European</i>, Sep 2014, Venise, Italy. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ESSDERC.2014.6948821\">⟨10.1109/ESSDERC.2014.6948821⟩</a>",
"citationFull_s":"Mukherjee Chhandak, Sebastien Fregonese, Thomas Zimmer, H. Happy, David Mele, et al.. Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation. <i>Solid State Device Research Conference (ESSDERC), 2014, 44th European</i>, Sep 2014, Venise, Italy. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ESSDERC.2014.6948821\">⟨10.1109/ESSDERC.2014.6948821⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01090864\">⟨hal-01090864⟩</a>",
"title_s":["Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation"],
"authFullName_s":["Mukherjee Chhandak",
"Sebastien Fregonese",
"Thomas Zimmer",
"H. Happy",
"David Mele",
"Cristell Maneux"],
"halId_s":"hal-01090864",
"docType_s":"COMM",
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"citationRef_s":"<i>17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014</i>, May 2014, Villeneuve d'Ascq, France. 4 p",
"citationFull_s":"Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, et al.. Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications. <i>17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014</i>, May 2014, Villeneuve d'Ascq, France. 4 p. <a target=\"_blank\" href=\"https://hal.science/hal-01018384\">⟨hal-01018384⟩</a>",
"title_s":["Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications"],
"authFullName_s":["Wei Wei",
"Geetanjali Deokar",
"Mohamed Moez Belhaj",
"D. Mele",
"Emiliano Pallecchi",
"Emmanuelle Pichonat",
"Dominique Vignaud",
"Henri Happy"],
"halId_s":"hal-01018384",
"docType_s":"COMM",
"producedDateY_i":2014},
{
"citationRef_s":"<i>4th Graphene Conference, Graphene 2014</i>, May 2014, Toulouse, France. 2 p",
"citationFull_s":"Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, et al.. Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance. <i>4th Graphene Conference, Graphene 2014</i>, May 2014, Toulouse, France. 2 p. <a target=\"_blank\" href=\"https://hal.science/hal-00962375\">⟨hal-00962375⟩</a>",
"title_s":["Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance"],
"authFullName_s":["Mohamed Salah Khenissa",
"D. Mele",
"Mohamed Moez Belhaj",
"Ivy Colambo",
"Emiliano Pallecchi",
"Dominique Vignaud",
"Henri Happy"],
"halId_s":"hal-00962375",
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"producedDateY_i":2014},
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"citationRef_s":"<i>4th Graphene Conference, Graphene 2014</i>, May 2014, Toulouse, France. 2 p",
"citationFull_s":"Wei Wei, Mohamed Moez Belhaj, Geetanjali Deokar, D. Mele, Emiliano Pallecchi, et al.. Back-gated microwave field-effect transistors based on transferred CVD-grown graphene. <i>4th Graphene Conference, Graphene 2014</i>, May 2014, Toulouse, France. 2 p. <a target=\"_blank\" href=\"https://hal.science/hal-00962381\">⟨hal-00962381⟩</a>",
"title_s":["Back-gated microwave field-effect transistors based on transferred CVD-grown graphene"],
"authFullName_s":["Wei Wei",
"Mohamed Moez Belhaj",
"Geetanjali Deokar",
"D. Mele",
"Emiliano Pallecchi",
"Emmanuelle Pichonat",
"Dominique Vignaud",
"Henri Happy"],
"halId_s":"hal-00962381",
"docType_s":"COMM",
"producedDateY_i":2014},
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"citationRef_s":"<i>17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014</i>, 2014, Villeneuve d'Ascq, France. 4 p",
"citationFull_s":"Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, et al.. Transistors à effet de champ à base du graphène sur SiC avec grille en T : homogénéité et performances. <i>17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014</i>, 2014, Villeneuve d'Ascq, France. 4 p. <a target=\"_blank\" href=\"https://hal.science/hal-01018370\">⟨hal-01018370⟩</a>",
"title_s":["Transistors à effet de champ à base du graphène sur SiC avec grille en T : homogénéité et performances"],
"authFullName_s":["Mohamed Salah Khenissa",
"D. Mele",
"Mohamed Moez Belhaj",
"Ivy Colambo",
"Emiliano Pallecchi",
"Dominique Vignaud",
"Henri Happy"],
"halId_s":"hal-01018370",
"docType_s":"COMM",
"producedDateY_i":2014},
{
"citationRef_s":"<i>62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications</i>, 2014, Tampa, FL, United States",
"citationFull_s":"Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, et al.. [Invited] High frequency electronic devices : impact of beyond graphene materials. <i>62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications</i>, 2014, Tampa, FL, United States. <a target=\"_blank\" href=\"https://hal.science/hal-01044773\">⟨hal-01044773⟩</a>",
"title_s":["[Invited] High frequency electronic devices : impact of beyond graphene materials"],
"authFullName_s":["Henri Happy",
"D. Mele",
"Ivy Colambo",
"Mohamed Salah Khenissa",
"Mohamed Moez Belhaj",
"Emiliano Pallecchi",
"Abdelkarim Ouerghi",
"Dominique Vignaud",
"Gilles Dambrine"],
"halId_s":"hal-01044773",
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"producedDateY_i":2014},
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