David Mele
Maître de conférences
Laboratoire / équipe
Publications
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"citationRef_s":"<i>ACS Applied Materials & Interfaces</i>, 2024, 16 (12), pp.14852-14863. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acsami.3c19031\">⟨10.1021/acsami.3c19031⟩</a>",
"citationFull_s":"My Nghe Tran, Myriam Moreau, Ahmed Addad, Adrien Teurtrie, Thomas Roland, et al.. Boosting Gas-Phase TiO 2 Photocatalysis with Weak Electric Field Strengths of Volt/Centimeter. <i>ACS Applied Materials & Interfaces</i>, 2024, 16 (12), pp.14852-14863. <a target=\"_blank\" href=\"https://dx.doi.org/10.1021/acsami.3c19031\">⟨10.1021/acsami.3c19031⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04774520v2\">⟨hal-04774520v2⟩</a>",
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"citationRef_s":"<i>Nature Physics</i>, 2023, 19 (6), pp.830-835. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41567-023-01978-9\">⟨10.1038/s41567-023-01978-9⟩</a>",
"citationFull_s":"A. Schmitt, P. Vallet, D. Mele, M. Rosticher, T. Taniguchi, et al.. Mesoscopic Klein-Schwinger effect in graphene. <i>Nature Physics</i>, 2023, 19 (6), pp.830-835. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41567-023-01978-9\">⟨10.1038/s41567-023-01978-9⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04035853v2\">⟨hal-04035853v2⟩</a>",
"title_s":["Mesoscopic Klein-Schwinger effect in graphene"],
"authFullName_s":["A. Schmitt","P. Vallet","D. Mele","M. Rosticher","T. Taniguchi","K. Watanabe","E. Bocquillon","G. Fève","Jean-Marc Berroir","Christophe Voisin","J. Cayssol","M. Goerbig","J. Troost","E. Baudin","Bernard Plaçais"],
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"citationRef_s":"<i>Physical Review B</i>, 2023, 107 (16), pp.L161104. <a target=\"_blank\" href=\"https://dx.doi.org/10.1103/PhysRevB.107.L161104\">⟨10.1103/PhysRevB.107.L161104⟩</a>",
"citationFull_s":"A. Schmitt, D. Mele, M. Rosticher, T. Taniguchi, K. Watanabe, et al.. High-field 1/f noise in hBN-encapsulated graphene transistors. <i>Physical Review B</i>, 2023, 107 (16), pp.L161104. <a target=\"_blank\" href=\"https://dx.doi.org/10.1103/PhysRevB.107.L161104\">⟨10.1103/PhysRevB.107.L161104⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04086406v1\">⟨hal-04086406⟩</a>",
"title_s":["High-field 1/f noise in hBN-encapsulated graphene transistors"],
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"citationRef_s":"<i>Materials Research Express</i>, 2022, 9 (6), pp.065901. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2053-1591/ac4fe1\">⟨10.1088/2053-1591/ac4fe1⟩</a>",
"citationFull_s":"Aurelie Pierret, David Mele, Holger Graef, Jose Palomo, Takashi Taniguchi, et al.. Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride. <i>Materials Research Express</i>, 2022, 9 (6), pp.065901. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2053-1591/ac4fe1\">⟨10.1088/2053-1591/ac4fe1⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03564100v1\">⟨hal-03564100⟩</a>",
"title_s":["Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride"],
"authFullName_s":["Aurelie Pierret","David Mele","Holger Graef","Jose Palomo","Takashi Taniguchi","Kenji Watanabe","Y. Li","Bérangère Toury","Catherine Journet","Philippe Steyer","Vincent Garnier","Annick Loiseau","Jean-Marc Berroir","E. Bocquillon","Gwendal Feve","Christophe Voisin","Emmanuel Baudin","Michael Rosticher","Bernard Plaçais"],
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"citationRef_s":"<i>Plasmonics</i>, 2020, 15 (6), pp.1653-1660. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s11468-020-01185-9\">⟨10.1007/s11468-020-01185-9⟩</a>",
"citationFull_s":"Médéric Lequeux, David Mele, Priyamvada Venugopalan, Raymond Gillibert, Souhir Boujday, et al.. Plasmonic Properties of Gold Nanostructures on Gold Film. <i>Plasmonics</i>, 2020, 15 (6), pp.1653-1660. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s11468-020-01185-9\">⟨10.1007/s11468-020-01185-9⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03044556v1\">⟨hal-03044556⟩</a>",
"title_s":["Plasmonic Properties of Gold Nanostructures on Gold Film"],
"authFullName_s":["Médéric Lequeux","David Mele","Priyamvada Venugopalan","Raymond Gillibert","Souhir Boujday","Wolfgang Knoll","Jakub Dostalek","Marc Lamy de La Chapelle"],
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"producedDateY_i":2020
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"citationRef_s":"<i>Graphene2020</i>, Oct 2020, Grenoble, France",
"citationFull_s":"David Mele, Q. Wilmart, M. Boukhicha, H. Graef, D. Fruleux, et al.. Graphene field-effect transistors with velocity saturation. <i>Graphene2020</i>, Oct 2020, Grenoble, France. <a target=\"_blank\" href=\"https://hal.science/hal-03467761v1\">⟨hal-03467761⟩</a>",
"title_s":["Graphene field-effect transistors with velocity saturation"],
"authFullName_s":["David Mele","Q. Wilmart","M. Boukhicha","H. Graef","D. Fruleux","A. Schmitt","J. Palomo","M. Rosticher","T. Taniguchi","K. Watanabe","V. Bouchiat","E. Baudin","J.M. Berroir","G. Feve","E. Bocquillon","Emiliano Pallecchi","B. Placais"],
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"citationRef_s":"<i>Applied Sciences</i>, 2020, 10 (2), pp.446. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10020446\">⟨10.3390/app10020446⟩</a>",
"citationFull_s":"Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, José Palomo, et al.. High-frequency limits of graphene field-effect transistors with velocity saturation. <i>Applied Sciences</i>, 2020, 10 (2), pp.446. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/app10020446\">⟨10.3390/app10020446⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02520621v1\">⟨hal-02520621⟩</a>",
"title_s":["High-frequency limits of graphene field-effect transistors with velocity saturation"],
"authFullName_s":["Quentin Wilmart","Mohamed Boukhicha","Holger Graef","David Mele","José Palomo","Michael Rosticher","Takashi Taniguchi","Kenji Watanabe","Vincent Bouchiat","Emmanuel Baudin","Jean-Marc Berroir","Erwann Bocquillon","Gwendal Fève","Emiliano Pallecchi","Bernard Plaçais"],
"halId_s":"hal-02520621",
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"citationRef_s":"<i>Nature Communications</i>, 2019, 10 (1), pp.2428. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-019-10326-6\">⟨10.1038/s41467-019-10326-6⟩</a>",
"citationFull_s":"H. Graef, Q. Wilmart, M. Rosticher, D. Mele, L. Banszerus, et al.. A corner reflector of graphene Dirac fermions as a phonon-scattering sensor. <i>Nature Communications</i>, 2019, 10 (1), pp.2428. <a target=\"_blank\" href=\"https://dx.doi.org/10.1038/s41467-019-10326-6\">⟨10.1038/s41467-019-10326-6⟩</a>. <a target=\"_blank\" href=\"https://hal.sorbonne-universite.fr/hal-02159529v1\">⟨hal-02159529⟩</a>",
"title_s":["A corner reflector of graphene Dirac fermions as a phonon-scattering sensor"],
"authFullName_s":["H. Graef","Q. Wilmart","M. Rosticher","D. Mele","L. Banszerus","C. Stampfer","T. Taniguchi","K. Watanabe","Jean-Marc Berroir","Erwann Bocquillon","G. Fève","E H T Teo","Bernard Plaçais"],
"halId_s":"hal-02159529",
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"producedDateY_i":2019
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"citationRef_s":"<i>Journal of Physics: Materials</i>, 2018, 1 (1), pp.01LT02. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2515-7639/aadd8c\">⟨10.1088/2515-7639/aadd8c⟩</a>",
"citationFull_s":"H Graef, D. Mele, M. Rosticher, L Banszerus, C Stampfer, et al.. Ultra-long wavelength Dirac plasmons in graphene capacitors. <i>Journal of Physics: Materials</i>, 2018, 1 (1), pp.01LT02. <a target=\"_blank\" href=\"https://dx.doi.org/10.1088/2515-7639/aadd8c\">⟨10.1088/2515-7639/aadd8c⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-02318668v1\">⟨hal-02318668⟩</a>",
"title_s":["Ultra-long wavelength Dirac plasmons in graphene capacitors"],
"authFullName_s":["H Graef","D. Mele","M. Rosticher","L Banszerus","C Stampfer","T. Taniguchi","K Watanabe","E. Bocquillon","G. Fève","J-M Berroir","E Teo","B. Plaçais"],
"halId_s":"hal-02318668",
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"producedDateY_i":2018
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"citationRef_s":"<i>Electronic Materials Letters</i>, 2018, 14 (2), pp.133-138. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s13391-018-0038-x\">⟨10.1007/s13391-018-0038-x⟩</a>",
"citationFull_s":"David Mele, Sarah Mehdhbi, Dalal Fadil, Wei Wei, Abdelkarim Ouerghi, et al.. Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications. <i>Electronic Materials Letters</i>, 2018, 14 (2), pp.133-138. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s13391-018-0038-x\">⟨10.1007/s13391-018-0038-x⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03183508v1\">⟨hal-03183508⟩</a>",
"title_s":["Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications"],
"authFullName_s":["David Mele","Sarah Mehdhbi","Dalal Fadil","Wei Wei","Abdelkarim Ouerghi","Sylvie Lepilliet","Henri Happy","Emiliano Pallecchi"],
"halId_s":"hal-03183508",
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"producedDateY_i":2018
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"citationRef_s":"<i>2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)</i>, May 2016, Las Vegas, Nevada, United States. pp.1255-1260, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ITHERM.2016.7517691\">⟨10.1109/ITHERM.2016.7517691⟩</a>",
"citationFull_s":"Georges Pavlidis, David Mele, Ting Cheng, F Medjdoub, Samuel Graham. The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry. <i>2016 15th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)</i>, May 2016, Las Vegas, Nevada, United States. pp.1255-1260, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ITHERM.2016.7517691\">⟨10.1109/ITHERM.2016.7517691⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03028471v1\">⟨hal-03028471⟩</a>",
"title_s":["The thermal effects of substrate removal on GaN HEMTs using Raman Thermometry"],
"authFullName_s":["Georges Pavlidis","David Mele","Ting Cheng","F Medjdoub","Samuel Graham"],
"halId_s":"hal-03028471",
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"producedDateY_i":2016
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"citationRef_s":"<i>IEEE Journal of the Electron Devices Society</i>, 2015, 3 (1), pp.99. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/JEDS.2014.2360408\">⟨10.1109/JEDS.2014.2360408⟩</a>",
"citationFull_s":"Sebastien Fregonese, Magali de Matos, David Mele, Cristell Maneux, Henri Happy, et al.. Source-Pull and Load-Pull Characterization of Graphene FET. <i>IEEE Journal of the Electron Devices Society</i>, 2015, 3 (1), pp.99. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/JEDS.2014.2360408\">⟨10.1109/JEDS.2014.2360408⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01090826v1\">⟨hal-01090826⟩</a>",
"title_s":["Source-Pull and Load-Pull Characterization of Graphene FET"],
"authFullName_s":["Sebastien Fregonese","Magali de Matos","David Mele","Cristell Maneux","Henri Happy","Thomas Zimmer"],
"halId_s":"hal-01090826",
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"producedDateY_i":2015
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"citationRef_s":"<i>44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014</i>, Oct 2014, Rome, Italy. pp.367-370, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/EuMC.2014.6986446\">⟨10.1109/EuMC.2014.6986446⟩</a>",
"citationFull_s":"Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, et al.. Fabrication and characterization of CVD grown graphene based field-effect transistor. <i>44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014</i>, Oct 2014, Rome, Italy. pp.367-370, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/EuMC.2014.6986446\">⟨10.1109/EuMC.2014.6986446⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03335830v1\">⟨hal-03335830⟩</a>",
"title_s":["Fabrication and characterization of CVD grown graphene based field-effect transistor"],
"authFullName_s":["Wei Wei","Geetanjali Deokar","Mohamed Moez Belhaj","D. Mele","Emiliano Pallecchi","Emmanuelle Pichonat","Dominique Vignaud","Henri Happy"],
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"citationFull_s":"Poornakarthik Nakkala, Audrey Martin, Michel Campovecchio, Henri Happy, Mohamed Salah Khenissa, et al.. High Frequency Characterization and Compact Electrical Modelling of Graphene Field Effect Transistors\r\n. <i>44th European Microwave Conference</i>, Oct 2014, Rome, Italy. pp.1452-1455, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/EuMC.2014.6986720\">⟨10.1109/EuMC.2014.6986720⟩</a>. <a target=\"_blank\" href=\"https://unilim.hal.science/hal-01136463v1\">⟨hal-01136463⟩</a>",
"title_s":["High Frequency Characterization and Compact Electrical Modelling of Graphene Field Effect Transistors"],
"authFullName_s":["Poornakarthik Nakkala","Audrey Martin","Michel Campovecchio","Henri Happy","Mohamed Salah Khenissa","Mohamed Moez Belhaj","D. Mele","Ivy Colambo","Emiliano Pallecchi","Dominique Vignaud"],
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"citationRef_s":"<i>Solid State Device Research Conference (ESSDERC), 2014, 44th European</i>, Sep 2014, Venise, Italy. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ESSDERC.2014.6948821\">⟨10.1109/ESSDERC.2014.6948821⟩</a>",
"citationFull_s":"Mukherjee Chhandak, Sebastien Fregonese, Thomas Zimmer, H. Happy, David Mele, et al.. Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation. <i>Solid State Device Research Conference (ESSDERC), 2014, 44th European</i>, Sep 2014, Venise, Italy. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ESSDERC.2014.6948821\">⟨10.1109/ESSDERC.2014.6948821⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01090864v1\">⟨hal-01090864⟩</a>",
"title_s":["Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation"],
"authFullName_s":["Mukherjee Chhandak","Sebastien Fregonese","Thomas Zimmer","H. Happy","David Mele","Cristell Maneux"],
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"citationFull_s":"Wei Wei, Geetanjali Deokar, Mohamed Moez Belhaj, D. Mele, Emiliano Pallecchi, et al.. Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications. <i>17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014</i>, May 2014, Villeneuve d'Ascq, France. 4 p. <a target=\"_blank\" href=\"https://hal.science/hal-01018384v1\">⟨hal-01018384⟩</a>",
"title_s":["Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications"],
"authFullName_s":["Wei Wei","Geetanjali Deokar","Mohamed Moez Belhaj","D. Mele","Emiliano Pallecchi","Emmanuelle Pichonat","Dominique Vignaud","Henri Happy"],
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"citationRef_s":"<i>4th Graphene Conference, Graphene 2014</i>, May 2014, Toulouse, France. 2 p",
"citationFull_s":"Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, et al.. Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance. <i>4th Graphene Conference, Graphene 2014</i>, May 2014, Toulouse, France. 2 p. <a target=\"_blank\" href=\"https://hal.science/hal-00962375v1\">⟨hal-00962375⟩</a>",
"title_s":["Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance"],
"authFullName_s":["Mohamed Salah Khenissa","D. Mele","Mohamed Moez Belhaj","Ivy Colambo","Emiliano Pallecchi","Dominique Vignaud","Henri Happy"],
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"citationFull_s":"Wei Wei, Mohamed Moez Belhaj, Geetanjali Deokar, D. Mele, Emiliano Pallecchi, et al.. Back-gated microwave field-effect transistors based on transferred CVD-grown graphene. <i>4th Graphene Conference, Graphene 2014</i>, May 2014, Toulouse, France. 2 p. <a target=\"_blank\" href=\"https://hal.science/hal-00962381v1\">⟨hal-00962381⟩</a>",
"title_s":["Back-gated microwave field-effect transistors based on transferred CVD-grown graphene"],
"authFullName_s":["Wei Wei","Mohamed Moez Belhaj","Geetanjali Deokar","D. Mele","Emiliano Pallecchi","Emmanuelle Pichonat","Dominique Vignaud","Henri Happy"],
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"citationFull_s":"Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, et al.. Transistors à effet de champ à base du graphène sur SiC avec grille en T : homogénéité et performances. <i>17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014</i>, 2014, Villeneuve d'Ascq, France. 4 p. <a target=\"_blank\" href=\"https://hal.science/hal-01018370v1\">⟨hal-01018370⟩</a>",
"title_s":["Transistors à effet de champ à base du graphène sur SiC avec grille en T : homogénéité et performances"],
"authFullName_s":["Mohamed Salah Khenissa","D. Mele","Mohamed Moez Belhaj","Ivy Colambo","Emiliano Pallecchi","Dominique Vignaud","Henri Happy"],
"halId_s":"hal-01018370",
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"citationFull_s":"David Mele. Développement de dispositifs à base de graphène pour des applications hautes fréquences. 2014. <a target=\"_blank\" href=\"https://hal.science/hal-00994831v1\">⟨hal-00994831⟩</a>",
"title_s":["Développement de dispositifs à base de graphène pour des applications hautes fréquences"],
"authFullName_s":["David Mele"],
"halId_s":"hal-00994831",
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"citationRef_s":"<i>62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications</i>, 2014, Tampa, FL, United States",
"citationFull_s":"Henri Happy, D. Mele, Ivy Colambo, Mohamed Salah Khenissa, Mohamed Moez Belhaj, et al.. [Invited] High frequency electronic devices : impact of beyond graphene materials. <i>62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK - Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications</i>, 2014, Tampa, FL, United States. <a target=\"_blank\" href=\"https://hal.science/hal-01044773v1\">⟨hal-01044773⟩</a>",
"title_s":["[Invited] High frequency electronic devices : impact of beyond graphene materials"],
"authFullName_s":["Henri Happy","D. Mele","Ivy Colambo","Mohamed Salah Khenissa","Mohamed Moez Belhaj","Emiliano Pallecchi","Abdelkarim Ouerghi","Dominique Vignaud","Gilles Dambrine"],
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"citationRef_s":"<i>61st IEEE MTT-S International Microwave Symposium, IMS 2013</i>, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/MWSYM.2013.6697561\">⟨10.1109/MWSYM.2013.6697561⟩</a>",
"citationFull_s":"D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, et al.. High frequency noise characterisation of graphene FET Device. <i>61st IEEE MTT-S International Microwave Symposium, IMS 2013</i>, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/MWSYM.2013.6697561\">⟨10.1109/MWSYM.2013.6697561⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-00944030v1\">⟨hal-00944030⟩</a>",
"title_s":["High frequency noise characterisation of graphene FET Device"],
"authFullName_s":["D. Mele","S. Fregonese","Sylvie Lepilliet","E. Pichonat","Gilles Dambrine","H. Happy"],
"halId_s":"hal-00944030",
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