Christophe Gaquiere

Professeur des universités CNU : SECTION 63 - ELECTRONIQUE, OPTRONIQUE ET SYSTEMES

UMR 8520 - INSTITUT D'ELECTRONIQUE, DE MICROELECTRONIQUE ET DE NANOTECHNOLOGIE

Publications

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Frequency-Modulated Continuous Wave Computational Imaging : Preliminary Results. 2024 IEEE International Symposium on Antennas and Propagation and INC/USNC‐URSI Radio Science Meeting (AP-S/INC-USNC-URSI), Jul 2024, Firenze, France. pp.1131-1132, <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/AP-S/INC-USNC-URSI52054.2024.10686672\">⟨10.1109/AP-S/INC-USNC-URSI52054.2024.10686672⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04729954v1\">⟨hal-04729954⟩</a>", "title_s":["Frequency-Modulated Continuous Wave Computational Imaging : Preliminary Results"], "authFullName_s":["Salah Skitioui","Cyril Decroze","Ettien Kpré","Christophe Gaquière","Okan Yurduseven","Thomas Fromentèze"], "halId_s":"hal-04729954", "docType_s":"COMM", "producedDateY_i":2024 },{ "citationRef_s":"Applied Physics Letters, 2024, 125 (1), <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0214563\">⟨10.1063/5.0214563⟩</a>", "citationFull_s":"Charles Pitaval, Sébastien Aroulanda, Yassine Fouzi, Nicolas Defrance, Cédric Lacam, et al.. InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE. Applied Physics Letters, 2024, 125 (1), <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/5.0214563\">⟨10.1063/5.0214563⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04663951v1\">⟨hal-04663951⟩</a>", "title_s":["InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE"], "authFullName_s":["Charles Pitaval","Sébastien Aroulanda","Yassine Fouzi","Nicolas Defrance","Cédric Lacam","Nicolas Michel","Nadia El Bondry","Mourad Oualli","Laurent Teisseire","Jean-Claude Jacquet","Stéphane Piotrowicz","Christophe Gaquière","Sylvain Delage"], "halId_s":"hal-04663951", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"2024 18th European Conference on Antennas and Propagation (EuCAP), Mar 2024, Glasgow, United Kingdom. pp.1-4, <a target=\"_blank\" href=\"https://dx.doi.org/10.23919/EuCAP60739.2024.10501615\">⟨10.23919/EuCAP60739.2024.10501615⟩</a>", "citationFull_s":"Chukwuka Ozuem Anthony, Divitha Seetharamdoo, Florent Gamand, Christophe Gaquière. Design of Microstrip UWB Antenna With Full Ground Plane For Wearable Applications. 2024 18th European Conference on Antennas and Propagation (EuCAP), Mar 2024, Glasgow, United Kingdom. pp.1-4, <a target=\"_blank\" href=\"https://dx.doi.org/10.23919/EuCAP60739.2024.10501615\">⟨10.23919/EuCAP60739.2024.10501615⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04575406v1\">⟨hal-04575406⟩</a>", "title_s":["Design of Microstrip UWB Antenna With Full Ground Plane For Wearable Applications"], "authFullName_s":["Chukwuka Ozuem Anthony","Divitha Seetharamdoo","Florent Gamand","Christophe Gaquière"], "halId_s":"hal-04575406", "docType_s":"COMM", "producedDateY_i":2024 },{ "citationRef_s":"IEEE Transactions on Microwave Theory and Techniques, 2024, 72 (3), pp.1775 - 1789. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TMTT.2023.3311476\">⟨10.1109/TMTT.2023.3311476⟩</a>", "citationFull_s":"Victor Fiorese, Joao Carlos Azevedo Goncalves, Simon Bouvot, Sylvie Lepilliet, Daniel Gloria, et al.. A G-band Packaged Amplified Noise Source using SiGe BiCMOS 55 nm Technology. IEEE Transactions on Microwave Theory and Techniques, 2024, 72 (3), pp.1775 - 1789. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TMTT.2023.3311476\">⟨10.1109/TMTT.2023.3311476⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04192337v2\">⟨hal-04192337v2⟩</a>", "title_s":["A G-band Packaged Amplified Noise Source using SiGe BiCMOS 55 nm Technology"], "authFullName_s":["Victor Fiorese","Joao Carlos Azevedo Goncalves","Simon Bouvot","Sylvie Lepilliet","Daniel Gloria","Guillaume Ducournau","Christophe Gaquière","Emmanuel Dubois"], "halId_s":"hal-04192337", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"Micro and Nanostructures, 2024, 186, pp.207738. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.micrna.2023.207738\">⟨10.1016/j.micrna.2023.207738⟩</a>", "citationFull_s":"Sabrina Alam, Fahmida Sharmin Jui, Christophe Gaquière, Mohammad Abdul Alim. Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT. Micro and Nanostructures, 2024, 186, pp.207738. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.micrna.2023.207738\">⟨10.1016/j.micrna.2023.207738⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04419327v1\">⟨hal-04419327⟩</a>", "title_s":["Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT"], "authFullName_s":["Sabrina Alam","Fahmida Sharmin Jui","Christophe Gaquière","Mohammad Abdul Alim"], "halId_s":"hal-04419327", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"Physica Status Solidi A (applications and materials science), 2024, <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/pssa.202300653\">⟨10.1002/pssa.202300653⟩</a>", "citationFull_s":"Raphaël Strenaer, Yannick Guhel, Christophe Gaquière, Bertrand Boudart. Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination. Physica Status Solidi A (applications and materials science), 2024, <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/pssa.202300653\">⟨10.1002/pssa.202300653⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04408068v1\">⟨hal-04408068⟩</a>", "title_s":["Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination"], "authFullName_s":["Raphaël Strenaer","Yannick Guhel","Christophe Gaquière","Bertrand Boudart"], "halId_s":"hal-04408068", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"River Publisher, 1, pp.1-224, 2024, e-ISBN 9788770046640. <a target=\"_blank\" href=\"https://dx.doi.org/10.13052/rp-9788770046640\">⟨10.13052/rp-9788770046640⟩</a>", "citationFull_s":"Björn Debaillie, Philippe Ferrari, Didier Belot, François Brunier, Christophe Gaquière, et al.. Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications. River Publisher, 1, pp.1-224, 2024, e-ISBN 9788770046640. <a target=\"_blank\" href=\"https://dx.doi.org/10.13052/rp-9788770046640\">⟨10.13052/rp-9788770046640⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04751303v1\">⟨hal-04751303⟩</a>", "title_s":["Key Enabling Technologies for Future Wireless, Wired, Optical and Satcom Applications"], "authFullName_s":["Björn Debaillie","Philippe Ferrari","Didier Belot","François Brunier","Christophe Gaquière","Pierre Busson","Urtė Steikūnienė"], "halId_s":"hal-04751303", "docType_s":"OUV", "producedDateY_i":2024 },{ "citationRef_s":"IEEE Antennas and Wireless Propagation Letters, 2024, pp.1-5. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/LAWP.2024.3409195\">⟨10.1109/LAWP.2024.3409195⟩</a>", "citationFull_s":"Salah Skitioui, Cyril Decroze, Ettien Kpre, Christophe Gaquière, Okan Yurduseven, et al.. Single-Channel Imaging at Low Sampling Rates. IEEE Antennas and Wireless Propagation Letters, 2024, pp.1-5. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/LAWP.2024.3409195\">⟨10.1109/LAWP.2024.3409195⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04614410v1\">⟨hal-04614410⟩</a>", "title_s":["Single-Channel Imaging at Low Sampling Rates"], "authFullName_s":["Salah Skitioui","Cyril Decroze","Ettien Kpre","Christophe Gaquière","Okan Yurduseven","Thomas Fromenteze"], "halId_s":"hal-04614410", "docType_s":"ART", "producedDateY_i":2024 },{ "citationRef_s":"Journal of Computational Electronics, 2023, <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s10825-023-02121-w\">⟨10.1007/s10825-023-02121-w⟩</a>", "citationFull_s":"Fahmida Sharmin Jui, Sabrina Alam, Anwar Jarndal, Christophe Gaquiere, Mohammad Alim. Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT. Journal of Computational Electronics, 2023, <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s10825-023-02121-w\">⟨10.1007/s10825-023-02121-w⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04369026v1\">⟨hal-04369026⟩</a>", "title_s":["Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT"], "authFullName_s":["Fahmida Sharmin Jui","Sabrina Alam","Anwar Jarndal","Christophe Gaquiere","Mohammad Alim"], "halId_s":"hal-04369026", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Microelectronics Reliability, 2023, 150, pp.115156. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.microrel.2023.115156\">⟨10.1016/j.microrel.2023.115156⟩</a>", "citationFull_s":"R. Strenaer, Y. Guhel, C. Gaquiere, B. Boudart. Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers. Microelectronics Reliability, 2023, 150, pp.115156. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.microrel.2023.115156\">⟨10.1016/j.microrel.2023.115156⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04281820v1\">⟨hal-04281820⟩</a>", "title_s":["Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers"], "authFullName_s":["R. Strenaer","Y. Guhel","C. Gaquiere","B. Boudart"], "halId_s":"hal-04281820", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Sensors, 2023, 23 (17), pp.7650. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/s23177650\">⟨10.3390/s23177650⟩</a>", "citationFull_s":"Driss Aouladhadj, Ettien Kpre, Virginie Deniau, Aymane Kharchouf, Christophe Gransart, et al.. Drone Detection and Tracking Using RF Identification Signals. Sensors, 2023, 23 (17), pp.7650. <a target=\"_blank\" href=\"https://dx.doi.org/10.3390/s23177650\">⟨10.3390/s23177650⟩</a>. <a target=\"_blank\" href=\"https://univ-eiffel.hal.science/hal-04205964v1\">⟨hal-04205964⟩</a>", "title_s":["Drone Detection and Tracking Using RF Identification Signals"], "authFullName_s":["Driss Aouladhadj","Ettien Kpre","Virginie Deniau","Aymane Kharchouf","Christophe Gransart","Christophe Gaquière"], "halId_s":"hal-04205964", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Terahertz Emitters, Receivers, and Applications XIV, Aug 2023, San Diego, United States. pp.3, <a target=\"_blank\" href=\"https://dx.doi.org/10.1117/12.2681926\">⟨10.1117/12.2681926⟩</a>", "citationFull_s":"Jean-Paul Guillet, Jean Rioult, Christophe Gaquière. Blackbody source-based terahertz nondestructive testing with augmented reality. Terahertz Emitters, Receivers, and Applications XIV, Aug 2023, San Diego, United States. pp.3, <a target=\"_blank\" href=\"https://dx.doi.org/10.1117/12.2681926\">⟨10.1117/12.2681926⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04230902v1\">⟨hal-04230902⟩</a>", "title_s":["Blackbody source-based terahertz nondestructive testing with augmented reality"], "authFullName_s":["Jean-Paul Guillet","Jean Rioult","Christophe Gaquière"], "halId_s":"hal-04230902", "docType_s":"COMM", "producedDateY_i":2023 },{ "citationRef_s":"Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/pssa.202200476\">⟨10.1002/pssa.202200476⟩</a>", "citationFull_s":"Charles Pitaval, Cédric Lacam, N. Defrance, Christophe Gaquière, Nicolas Michel, et al.. Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT. Physica Status Solidi A (applications and materials science), 2023, 220 (16), pp.2200476. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/pssa.202200476\">⟨10.1002/pssa.202200476⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03875911v1\">⟨hal-03875911⟩</a>", "title_s":["Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT"], "authFullName_s":["Charles Pitaval","Cédric Lacam","N. Defrance","Christophe Gaquière","Nicolas Michel","Olivier Parillaud","Sylvain Delage"], "halId_s":"hal-03875911", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Solid-State Electronics, 2023, 204, pp.108654. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.sse.2023.108654\">⟨10.1016/j.sse.2023.108654⟩</a>", "citationFull_s":"E. Brezza, F. Deprat, C. de Buttet, A. Gauthier, M. Gregoire, et al.. Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors. Solid-State Electronics, 2023, 204, pp.108654. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.sse.2023.108654\">⟨10.1016/j.sse.2023.108654⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04084450v1\">⟨hal-04084450⟩</a>", "title_s":["Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors"], "authFullName_s":["E. Brezza","F. Deprat","C. de Buttet","A. Gauthier","M. Gregoire","D. Guiheux","V. Guyader","M. Juhel","I. Berbezier","E. Assaf","L. Favre","P. Chevalier","Christophe Gaquière","N. Defrance"], "halId_s":"hal-04084450", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Micro and Nanostructures, 2023, 177, pp.207547. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.micrna.2023.207547\">⟨10.1016/j.micrna.2023.207547⟩</a>", "citationFull_s":"Mohammad Abdul Alim, Mayahsa Ali, Christophe Gaquière. Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT. Micro and Nanostructures, 2023, 177, pp.207547. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.micrna.2023.207547\">⟨10.1016/j.micrna.2023.207547⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04034333v1\">⟨hal-04034333⟩</a>", "title_s":["Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT"], "authFullName_s":["Mohammad Abdul Alim","Mayahsa Ali","Christophe Gaquière"], "halId_s":"hal-04034333", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Journal of Materials Science: Materials in Electronics, 2023, 34 (10), pp.892. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s10854-023-10176-5\">⟨10.1007/s10854-023-10176-5⟩</a>", "citationFull_s":"Mohammad Abdul Alim, Anwar Jarndal, Christophe Gaquière, Giovanni Crupi. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures. Journal of Materials Science: Materials in Electronics, 2023, 34 (10), pp.892. <a target=\"_blank\" href=\"https://dx.doi.org/10.1007/s10854-023-10176-5\">⟨10.1007/s10854-023-10176-5⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-04086367v1\">⟨hal-04086367⟩</a>", "title_s":["A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures"], "authFullName_s":["Mohammad Abdul Alim","Anwar Jarndal","Christophe Gaquière","Giovanni Crupi"], "halId_s":"hal-04086367", "docType_s":"ART", "producedDateY_i":2023 },{ "citationRef_s":"Microelectronics Reliability, 2022, 139, pp.114847. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.microrel.2022.114847\">⟨10.1016/j.microrel.2022.114847⟩</a>", "citationFull_s":"Edoardo Brezza, Paul Dumas, Alexis Gauthier, Fanny Hilario, Pascal Chevalier, et al.. Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality. Microelectronics Reliability, 2022, 139, pp.114847. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.microrel.2022.114847\">⟨10.1016/j.microrel.2022.114847⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03852631v1\">⟨hal-03852631⟩</a>", "title_s":["Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality"], "authFullName_s":["Edoardo Brezza","Paul Dumas","Alexis Gauthier","Fanny Hilario","Pascal Chevalier","Christophe Gaquière","N. Defrance"], "halId_s":"hal-03852631", "docType_s":"ART", "producedDateY_i":2022 },{ "citationRef_s":"Microelectronics Reliability, 2022, 138, pp.114693. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.microrel.2022.114693\">⟨10.1016/j.microrel.2022.114693⟩</a>", "citationFull_s":"R. Strenaer, Y. Guhel, G. Brocero, C. Gaquiere, B. Boudart. Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers. Microelectronics Reliability, 2022, 138, pp.114693. <a target=\"_blank\" href=\"https://dx.doi.org/10.1016/j.microrel.2022.114693\">⟨10.1016/j.microrel.2022.114693⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03842886v1\">⟨hal-03842886⟩</a>", "title_s":["Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-raman thermometers"], "authFullName_s":["R. Strenaer","Y. Guhel","G. Brocero","C. Gaquiere","B. Boudart"], "halId_s":"hal-03842886", "docType_s":"ART", "producedDateY_i":2022 },{ "citationRef_s":"IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6010-6015. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TED.2022.3209636\">⟨10.1109/TED.2022.3209636⟩</a>", "citationFull_s":"R. Strenaer, Y. Guhel, C. Gaquiere, B. Boudart. Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements. IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6010-6015. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TED.2022.3209636\">⟨10.1109/TED.2022.3209636⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03812913v1\">⟨hal-03812913⟩</a>", "title_s":["Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements"], "authFullName_s":["R. Strenaer","Y. Guhel","C. Gaquiere","B. Boudart"], "halId_s":"hal-03812913", "docType_s":"ART", "producedDateY_i":2022 },{ "citationRef_s":"IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TED.2022.3201837\">⟨10.1109/TED.2022.3201837⟩</a>", "citationFull_s":"Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, et al.. Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts. IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/TED.2022.3201837\">⟨10.1109/TED.2022.3201837⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03775876v1\">⟨hal-03775876⟩</a>", "title_s":["Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts"], "authFullName_s":["Antoine Chanuel","Yveline Gobil","Chuan Lun Hsu","Matthew Charles","Marianne Coig","Jerome Biscarrat","Francois Aussenac","N. Defrance","Christophe Gaquière","Fred Gaillard","Erwan Morvan"], "halId_s":"hal-03775876", "docType_s":"ART", "producedDateY_i":2022 },{ "citationRef_s":"99th ARFTG Microwave Measurement Conference 2022, colocated with IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ARFTG54656.2022.9896490\">⟨10.1109/ARFTG54656.2022.9896490⟩</a>", "citationFull_s":"Marc Margalef-Rovira, Caroline Maye, Sylvie Lepilliet, Daniel Gloria, Guillaume Ducournau, et al.. Wideband mm-Wave Integrated Passive Tuners for Accurate Characterization of BiCMOS Technologies. 99th ARFTG Microwave Measurement Conference 2022, colocated with IEEE/MTT-S International Microwave Symposium, IMS 2022, Jun 2022, Denver, United States. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/ARFTG54656.2022.9896490\">⟨10.1109/ARFTG54656.2022.9896490⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-03698168v1\">⟨hal-03698168⟩</a>", "title_s":["Wideband mm-Wave Integrated Passive Tuners for Accurate Characterization of BiCMOS Technologies"], "authFullName_s":["Marc Margalef-Rovira","Caroline Maye","Sylvie Lepilliet","Daniel Gloria","Guillaume Ducournau","Christophe Gaquière"], "halId_s":"hal-03698168", "docType_s":"COMM", "producedDateY_i":2022 },{ "citationRef_s":"XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France", "citationFull_s":"Raphaël Strenaer, Yannick Guhel, Guillaume Brocero, Christophe Gaquière, B. Boudart. Analyse Thermique de Transistors AlInN/GaN avec des Micro-Thermomètres Raman à base de TiO2 et de CeO2. XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France. <a target=\"_blank\" href=\"https://hal.science/hal-03702567v1\">⟨hal-03702567⟩</a>", "title_s":["Analyse Thermique de Transistors AlInN/GaN avec des Micro-Thermomètres Raman à base de TiO2 et de CeO2"], "authFullName_s":["Raphaël Strenaer","Yannick Guhel","Guillaume Brocero","Christophe Gaquière","B. Boudart"], "halId_s":"hal-03702567", "docType_s":"COMM", "producedDateY_i":2022 },{ "citationRef_s":"XXIIèmes Journées Nationales Microondes, Jun 2022, Limoges, France", "citationFull_s":"Caroline Maye, Marc Margalef-Rovira, Issa Alaji, Sylvie Lepilliet, D. Gloria, et al.. Tuner intégré large bande en gamme de fréquences millimétriques pour la caractérisation en technologie BiCMOS 55 nm. 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Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. <a target=\"_blank\" href=\"https://hal.science/hal-00152654v1\">⟨hal-00152654⟩</a>", "title_s":["Détermination de caractéristiques I(V) en régime dynamique grand signal de transistors HEMTs AlGaN/GaN"], "authFullName_s":["N. Vellas","Christophe Gaquière","Y. Guhel","B. Boudart","E. Delos","Jean-Claude de Jaeger"], "halId_s":"hal-00152654", "docType_s":"COMM", "producedDateY_i":2001 },{ "citationRef_s":"IEEE Microwave and Guided Wave Letters, 2000, 10 (7), pp.267-269. <a target=\"_blank\" href=\"https://dx.doi.org/10.1109/75.856984\">⟨10.1109/75.856984⟩</a>", "citationFull_s":"Christophe Gaquière, Frédéric Bue-Erkmen, Pascal Delemotte, Yves Crosnier, Bernard Carnez, et al.. Effects on linearity in Ka band of single or double recess PHEMTs. 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HEMT structures on GaAs or InP substrates for millimeter wave power amplification. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece. <a target=\"_blank\" href=\"https://hal.science/hal-00159030v1\">⟨hal-00159030⟩</a>", "title_s":["HEMT structures on GaAs or InP substrates for millimeter wave power amplification"], "authFullName_s":["Didier Theron","Yvon Cordier","X. Wallart","S. Bollaert","Mohammed Zaknoune","Mustafa Boudrissa","Bertrand Bonte","Christophe Gaquière","Francis Mollot","A. Cappy","R. Fauquembergue","Jean-Claude de Jaeger"], "halId_s":"hal-00159030", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"2000, pp.389-392", "citationFull_s":"G. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, et al.. Diagnosis of trapping phenomena in GaN MESFET's. 2000, pp.389-392. <a target=\"_blank\" href=\"https://hal.science/hal-00159002v1\">⟨hal-00159002⟩</a>", "title_s":["Diagnosis of trapping phenomena in GaN MESFET's"], "authFullName_s":["G. Meneghesso","A. Chini","E. Zanoni","M. Manfredi","M. Pavesi","B. Boudart","Christophe Gaquière"], "halId_s":"hal-00159002", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"IEEE Microwave and Guided Wave Letters, 2000, 10, pp.19-20", "citationFull_s":"Christophe Gaquière, S. Trassaert, B. Boudart, D. Theron, Y. Crosnier. High power GaN MESFET's on sapphire substrate. IEEE Microwave and Guided Wave Letters, 2000, 10, pp.19-20. <a target=\"_blank\" href=\"https://hal.science/hal-00158979v1\">⟨hal-00158979⟩</a>", "title_s":["High power GaN MESFET's on sapphire substrate"], "authFullName_s":["Christophe Gaquière","S. Trassaert","B. Boudart","D. Theron","Y. Crosnier"], "halId_s":"hal-00158979", "docType_s":"ART", "producedDateY_i":2000 },{ "citationRef_s":"10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany", "citationFull_s":"Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, et al.. First results of GaN MESFET's realized on (111) Si. 10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. <a target=\"_blank\" href=\"https://hal.science/hal-00159036v1\">⟨hal-00159036⟩</a>", "title_s":["First results of GaN MESFET's realized on (111) Si"], "authFullName_s":["Virginie Hoel","Y. Guhel","B. Boudart","Christophe Gaquière","Jean-Claude de Jaeger","H. Lahreche","P. Gibart"], "halId_s":"hal-00159036", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"2000, pp.VIII-11, VIII-12", "citationFull_s":"Christophe Gaquière, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, et al.. Silicon nitride passivation on GaN MESFET's. 2000, pp.VIII-11, VIII-12. <a target=\"_blank\" href=\"https://hal.science/hal-00159001v1\">⟨hal-00159001⟩</a>", "title_s":["Silicon nitride passivation on GaN MESFET's"], "authFullName_s":["Christophe Gaquière","B. Boudart","R. Amokrane","Y. Guhel","Y. Crosnier","Jean-Claude de Jaeger","F. Omnes"], "halId_s":"hal-00159001", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"30th European Microwave Conferences, 2000, Paris, France. pp.102-104", "citationFull_s":"Frédéric Bue-Erkmen, Christophe Gaquière, X. Hue, B. Boudart, Yves Crosnier, et al.. Influence of recess and epilayers in the 26-40 GHz band HEMT's intermodulation. 30th European Microwave Conferences, 2000, Paris, France. pp.102-104. <a target=\"_blank\" href=\"https://hal.science/hal-00158996v1\">⟨hal-00158996⟩</a>", "title_s":["Influence of recess and epilayers in the 26-40 GHz band HEMT's intermodulation"], "authFullName_s":["Frédéric Bue-Erkmen","Christophe Gaquière","X. Hue","B. Boudart","Yves Crosnier","Jean-Claude de Jaeger","Bernard Carnez","D. Pons"], "halId_s":"hal-00158996", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"30th European Microwave Week, 2000, Paris, France", "citationFull_s":"Christophe Gaquière, Frédéric Bue-Erkmen, Pascal Delemotte, Yves Crosnier. Intermodulation load pull measurement in the 26-40 GHz bandwidth. 30th European Microwave Week, 2000, Paris, France. <a target=\"_blank\" href=\"https://hal.science/hal-00159051v1\">⟨hal-00159051⟩</a>", "title_s":["Intermodulation load pull measurement in the 26-40 GHz bandwidth"], "authFullName_s":["Christophe Gaquière","Frédéric Bue-Erkmen","Pascal Delemotte","Yves Crosnier"], "halId_s":"hal-00159051", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"Applied Spectroscopy, 2000, 54, pp.1423-1428", "citationFull_s":"Christophe Gaquière, B. Boudart, P.A. Dhamlincourt. Spatial mapping of electroluminescence due to impact ionization effect in high electron mobility transistors. Applied Spectroscopy, 2000, 54, pp.1423-1428. <a target=\"_blank\" href=\"https://hal.science/hal-00158981v1\">⟨hal-00158981⟩</a>", "title_s":["Spatial mapping of electroluminescence due to impact ionization effect in high electron mobility transistors"], "authFullName_s":["Christophe Gaquière","B. Boudart","P.A. Dhamlincourt"], "halId_s":"hal-00158981", "docType_s":"ART", "producedDateY_i":2000 },{ "citationRef_s":"Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2000, 2000, San Diego, CA, United States", "citationFull_s":"D. Theron, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger. RF power MISFET's using thin LT GaAs as a passivator. Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2000, 2000, San Diego, CA, United States. <a target=\"_blank\" href=\"https://hal.science/hal-00159031v1\">⟨hal-00159031⟩</a>", "title_s":["RF power MISFET's using thin LT GaAs as a passivator"], "authFullName_s":["D. Theron","B. Boudart","Christophe Gaquière","Jean-Claude de Jaeger"], "halId_s":"hal-00159031", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy", "citationFull_s":"B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, et al.. GaN MESFETs for power and high temperature applications. NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. <a target=\"_blank\" href=\"https://hal.science/hal-00159032v1\">⟨hal-00159032⟩</a>", "title_s":["GaN MESFETs for power and high temperature applications"], "authFullName_s":["B. Boudart","S. Trassaert","Christophe Gaquière","D. Theron","Y. Crosnier","François Huet","M.A. Poisson","I. Daumiller","E. Kohn"], "halId_s":"hal-00159032", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany", "citationFull_s":"A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, et al.. Deep traps related effects in GaN MESFET's grown on saphire substrate. 10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. <a target=\"_blank\" href=\"https://hal.science/hal-00159037v1\">⟨hal-00159037⟩</a>", "title_s":["Deep traps related effects in GaN MESFET's grown on saphire substrate"], "authFullName_s":["A. Chini","G. Meneghesso","E. Zanoni","M. Manfredi","M. Pavesi","B. Boudart","Christophe Gaquière"], "halId_s":"hal-00159037", "docType_s":"COMM", "producedDateY_i":2000 },{ "citationRef_s":"Journal of Raman Spectroscopy, 1999, 30 (8), pp.715 - 719. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/(SICI)1097-4555(199908)30:8<715::AID-JRS439>3.0.CO;2-T\">⟨10.1002/(SICI)1097-4555(199908)30:8<715::AID-JRS439>3.0.CO;2-T⟩</a>", "citationFull_s":"B. Boudart, Christophe Gaquière, M. Constant, A. Lorriaux, N. Lefebvre. Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate. Journal of Raman Spectroscopy, 1999, 30 (8), pp.715 - 719. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/(SICI)1097-4555(199908)30:8<715::AID-JRS439>3.0.CO;2-T\">⟨10.1002/(SICI)1097-4555(199908)30:8<715::AID-JRS439>3.0.CO;2-T⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647799v1\">⟨hal-01647799⟩</a>", "title_s":["Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate"], "authFullName_s":["B. Boudart","Christophe Gaquière","M. Constant","A. Lorriaux","N. Lefebvre"], "halId_s":"hal-01647799", "docType_s":"ART", "producedDateY_i":1999 },{ "citationRef_s":"Applied Physics Letters, 1999, 74 (21), pp.3221 - 3223. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/1.124111\">⟨10.1063/1.124111⟩</a>", "citationFull_s":"B. Boudart, Christophe Gaquière, S. Trassaert, M. Constant, A. Lorriaux, et al.. Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications. Applied Physics Letters, 1999, 74 (21), pp.3221 - 3223. <a target=\"_blank\" href=\"https://dx.doi.org/10.1063/1.124111\">⟨10.1063/1.124111⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01646787v1\">⟨hal-01646787⟩</a>", "title_s":["Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications"], "authFullName_s":["B. Boudart","Christophe Gaquière","S. Trassaert","M. Constant","A. Lorriaux","N. Lefebvre"], "halId_s":"hal-01646787", "docType_s":"ART", "producedDateY_i":1999 },{ "citationRef_s":"GAAS 99, 1999, Munich, Germany", "citationFull_s":"B. Boudart, S. Trassaert, Christophe Gaquière, Didier Theron, Y. Crosnier, et al.. Pulsed measurements of GaN MESFET. GAAS 99, 1999, Munich, Germany. <a target=\"_blank\" href=\"https://hal.science/hal-01649413v1\">⟨hal-01649413⟩</a>", "title_s":["Pulsed measurements of GaN MESFET"], "authFullName_s":["B. Boudart","S. Trassaert","Christophe Gaquière","Didier Theron","Y. Crosnier","Fabrice Huet","M.A. Poisson"], "halId_s":"hal-01649413", "docType_s":"COMM", "producedDateY_i":1999 },{ "citationRef_s":"1st Gallium Nitride Electronic Device Workshop, 1999, Cornell, United States", "citationFull_s":"Erhard Kohn, E Strobel, I. Daumiller, Christophe Gaquière, B. Boudart, et al.. Large signal and pulse instabilities in GaN HFETs. 1st Gallium Nitride Electronic Device Workshop, 1999, Cornell, United States. <a target=\"_blank\" href=\"https://hal.science/hal-01654323v1\">⟨hal-01654323⟩</a>", "title_s":["Large signal and pulse instabilities in GaN HFETs"], "authFullName_s":["Erhard Kohn","E Strobel","I. Daumiller","Christophe Gaquière","B. Boudart","Didier Theron","N.X. Nguyen","C.N. Nguyen"], "halId_s":"hal-01654323", "docType_s":"COMM", "producedDateY_i":1999 },{ "citationRef_s":"Electronics Letters, 1999, 35 (16), <a target=\"_blank\" href=\"https://dx.doi.org/10.1049/el:19990887\">⟨10.1049/el:19990887⟩</a>", "citationFull_s":"S. Trassaert, B. Boudart, Christophe Gaquière, Didier Theron, Y. Crosnier, et al.. Trap effects studies in GaN MESFETs by pulsed measurements. Electronics Letters, 1999, 35 (16), <a target=\"_blank\" href=\"https://dx.doi.org/10.1049/el:19990887\">⟨10.1049/el:19990887⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647642v1\">⟨hal-01647642⟩</a>", "title_s":["Trap effects studies in GaN MESFETs by pulsed measurements"], "authFullName_s":["S. Trassaert","B. Boudart","Christophe Gaquière","Didier Theron","Y. Crosnier","F. Huet","M.A. Poisson"], "halId_s":"hal-01647642", "docType_s":"ART", "producedDateY_i":1999 },{ "citationRef_s":"IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997, londres, United Kingdom", "citationFull_s":"Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, et al.. Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs. IEEE Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997, londres, United Kingdom. <a target=\"_blank\" href=\"https://hal.science/hal-01649377v1\">⟨hal-01649377⟩</a>", "title_s":["Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs"], "authFullName_s":["Didier Theron","B. Boudart","Christophe Gaquière","Georges Salmer","M. Lipka","B. Splingart","Erhard Kohn"], "halId_s":"hal-01649377", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"IEEE Workshop Experimentally based FET device modelling & Related nonlinear circuit design, 1997, Kassel, Germany", "citationFull_s":"Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, et al.. Characterisation of LT GaAs FET’s as a function of the temperature. IEEE Workshop Experimentally based FET device modelling & Related nonlinear circuit design, 1997, Kassel, Germany. <a target=\"_blank\" href=\"https://hal.science/hal-01648141v1\">⟨hal-01648141⟩</a>", "title_s":["Characterisation of LT GaAs FET’s as a function of the temperature"], "authFullName_s":["Didier Theron","B. Boudart","Christophe Gaquière","Georges Salmer","M. Lipka","B. Splingart","Erhard Kohn"], "halId_s":"hal-01648141", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), 1997, Londres, United Kingdom", "citationFull_s":"Didier Theron, B. Boudart, Christophe Gaquière, Georges Salmer, M. Lipka, et al.. Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FET’s. Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications (EDMO), 1997, Londres, United Kingdom. <a target=\"_blank\" href=\"https://hal.science/hal-01654293v1\">⟨hal-01654293⟩</a>", "title_s":["Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FET’s"], "authFullName_s":["Didier Theron","B. Boudart","Christophe Gaquière","Georges Salmer","M. Lipka","B. Splingart","Erhard Kohn"], "halId_s":"hal-01654293", "docType_s":"COMM", "producedDateY_i":1997 },{ "citationRef_s":"Electronics Letters, 1997, 33 (17), <a target=\"_blank\" href=\"https://dx.doi.org/10.1049/el:19971002\">⟨10.1049/el:19971002⟩</a>", "citationFull_s":"B. Boudart, Christophe Gaquière, Didier Theron. Gate current analysis of LT-GaAs passivated MESFETs. Electronics Letters, 1997, 33 (17), <a target=\"_blank\" href=\"https://dx.doi.org/10.1049/el:19971002\">⟨10.1049/el:19971002⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647646v1\">⟨hal-01647646⟩</a>", "title_s":["Gate current analysis of LT-GaAs passivated MESFETs"], "authFullName_s":["B. Boudart","Christophe Gaquière","Didier Theron"], "halId_s":"hal-01647646", "docType_s":"ART", "producedDateY_i":1997 },{ "citationRef_s":"Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M\">⟨10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M⟩</a>", "citationFull_s":"B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, et al.. Small- and large-signal measurements of low-temperature GaAs FETs. Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. <a target=\"_blank\" href=\"https://dx.doi.org/10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M\">⟨10.1002/(SICI)1098-2760(19960605)12:2<57::AID-MOP2>3.0.CO;2-M⟩</a>. <a target=\"_blank\" href=\"https://hal.science/hal-01647683v1\">⟨hal-01647683⟩</a>", "title_s":["Small- and large-signal measurements of low-temperature GaAs FETs"], "authFullName_s":["B. Boudart","Christophe Gaquière","S. Trassaert","Didier Theron","B. Splingart","M. Lipka","E. Kohn"], "halId_s":"hal-01647683", "docType_s":"ART", "producedDateY_i":1996 },{ "citationRef_s":"9es Journées Nationales Microondes, 1995, Paris, France", "citationFull_s":"B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, et al.. Mesures pulsées de TEC à grille isolée par du GaAs basse température. 9es Journées Nationales Microondes, 1995, Paris, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654242v1\">⟨hal-01654242⟩</a>", "title_s":["Mesures pulsées de TEC à grille isolée par du GaAs basse température"], "authFullName_s":["B. Boudart","Christophe Gaquière","S. Trassaert","Didier Theron","B. Splingart","M. Lipka","Erhard Kohn"], "halId_s":"hal-01654242", "docType_s":"COMM", "producedDateY_i":1995 },{ "citationRef_s":"5es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1994, Ecully, France", "citationFull_s":"E Bourcier, Christophe Robert, Christophe Gaquière, B. Boudart, Didier Theron, et al.. Réalisation et caractérisation de TEC GaAs à grille isolée par GaAs épitaxié à basse température. 5es Journées Nationales Microélectronique et Optoélectronique (JNMO), 1994, Ecully, France. <a target=\"_blank\" href=\"https://hal.science/hal-01654454v1\">⟨hal-01654454⟩</a>", "title_s":["Réalisation et caractérisation de TEC GaAs à grille isolée par GaAs épitaxié à basse température"], "authFullName_s":["E Bourcier","Christophe Robert","Christophe Gaquière","B. Boudart","Didier Theron","Georges Salmer"], "halId_s":"hal-01654454", "docType_s":"COMM", "producedDateY_i":1994 }] } }

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Christophe Gaquiere

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